HEXFET
Power MOSFET
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
G
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
9.2
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
5.8
A
I
DM
Pulsed Drain Current
37
P
D
@T
C
= 25C
Power Dissipation
170
W
Linear Derating Factor
1.3
W/C
V
GS
Gate-to-Source Voltage
30
V
E
AS
Single Pulse Avalanche Energy
290
mJ
I
AR
Avalanche Current
9.2
A
E
AR
Repetitive Avalanche Energy
17
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 srew
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
V
DSS
= 600V
R
DS(on)
= 0.75
I
D
= 9.2A
l
Dynamic dv/dt Rating
l
Repetitive Avalanche Rated
l
Fast Switching
l
Ease of Paraleling
l
Simple Drive Requirements
Description
10/7/98
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1
TO-220AB
IRFB9N60A
PD - 91811
IRFB9N60A
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
600
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.66
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.75
V
GS
= 10V, I
D
= 5.5A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
5.5
S
V
DS
= 25V, I
D
= 5.5A
25
A
V
DS
= 600V, V
GS
= 0V
250
V
DS
= 480V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
Q
g
Total Gate Charge
49
I
D
= 9.2A
Q
gs
Gate-to-Source Charge
13
nC
V
DS
= 400V
Q
gd
Gate-to-Drain ("Miller") Charge
20
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
13
V
DD
= 300V
t
r
Rise Time
25
I
D
= 9.2A
t
d(off)
Turn-Off Delay Time
30
R
G
= 9.1
t
f
Fall Time
22
R
D
= 35.5
,See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
1400
V
GS
= 0V
C
oss
Output Capacitance
180
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
7.1
pF
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
1957
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
49
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
96
V
GS
= 0V, V
DS
= 0V to 480V
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
9.2A, di/dt
50A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Starting T
J
= 25C, L = 6.8mH
R
G
= 25
, I
AS
= 9.2A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.5
V
T
J
= 25C, I
S
= 9.2A, V
GS
= 0V
t
rr
Reverse Recovery Time
530
800
ns
T
J
= 25C, I
F
= 9.2A
Q
rr
Reverse RecoveryCharge
3.0
4.4
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
9.2
37
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
IRFB9N60A
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.7V
1
10
100
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.7V
0.1
1
10
100
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
9.2A
IRFB9N60A
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
10
20
30
40
50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
9.2A
V
= 120V
DS
V
= 300V
DS
V
= 480V
DS
0.1
1
10
100
0.2
0.5
0.7
1.0
1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
0.1
1
10
100
1000
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0
4 0 0
8 0 0
1 2 0 0
1 6 0 0
2 0 0 0
2 4 0 0
1
1 0
1 0 0
1 0 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to-S ource V olta ge (V )
A
V = 0 V , f = 1M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
is s g s g d d s
rss g d
o ss d s g d
C
is s
C
os s
C
rs s
400V
IRFB9N60A
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5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature
( C)
I , Drain Current (A)
C
D
IRFB9N60A
6
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(B R )D SS
I
A S
R G
I
A S
0 .0 1
tp
D .U .T
L
V D S
+
-
VD D
D R IV E R
A
1 5 V
2 0 V
25
50
75
100
125
150
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
4.1A
5.8A
9.2A
IRFB9N60A
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7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
IRFB9N60A
8
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L E A D A S S IG NM E NT S
1 - G A T E
2 - D R A IN
3 - S O U RC E
4 - D R A IN
- B -
1.32 (.05 2)
1.22 (.04 8)
3X
0.55 (.02 2)
0.46 (.01 8)
2.92 (.11 5)
2.64 (.10 4)
4 .6 9 (.1 85 )
4 .2 0 (.1 65 )
3X
0 .9 3 (.0 37 )
0 .6 9 (.0 27 )
4 .0 6 (.160 )
3 .5 5 (.140 )
1 .1 5 (.0 4 5)
M IN
6 .4 7 (.2 55 )
6 .1 0 (.2 40 )
3.7 8 ( .14 9 )
3.5 4 ( .13 9 )
- A -
10 .5 4 (.415 )
10 .2 9 (.405 )
2.87 (.11 3)
2.62 (.10 3)
1 5.24 (.60 0)
1 4.84 (.58 4)
1 4.09 (.55 5)
1 3.47 (.53 0)
3 X
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
2.54 (.10 0)
2 X
0.36 (.0 14 ) M B A M
4
1 2 3
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14 .5 M , 1 982 . 3 O U TL IN E C O N F O R MS TO J E D E C O U T L IN E TO -2 20 A B .
2 C O N TR O L LIN G D IM E N S IO N : INC H 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
P A R T N U M B E R
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
L O T C O D E 9 B 1 M
A S S E M B L Y
L O T C O D E
D A T E C O D E
(Y Y W W )
Y Y = Y E A R
W W = W E E K
9 2 4 6
IR F 10 1 0
9B 1 M
A
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http://www.irf.com/ Data and specifications subject to change without notice. 10/98
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