06/11/03
www.irf.com
1
IRFBE30S
IRFBE30L
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
PD - 94694
Description
Third Generation HEXFETs from International
Rectifier provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
D
2
Pak
IRFBE30S
TO-262
IRFBE30L
HEXFET
Power MOSFET
S
D
G
V
DSS
= 800V
R
DS(on)
= 3.0
I
D
= 4.1A
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25C
Maximum Power Dissipation
W
Linear Derating Factor
W/C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
1.0
C/W
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
R
JA
Junction-to-Ambient
62
10 lbfin (1.1Nm)
125
1.0
20
13
260
4.1
300 (1.6mm from case )
-55 to + 150
2.0
Max.
4.1
2.6
16
IRFBE30S/IRFBE30L
2
www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
V
DD
=50V, starting T
J
= 25C, L=29mH, R
G
=25
,
I
AS
= 4.1A. (See Figure 12).
I
SD
4.1A, di/dt
100A/s, V
DD
600,
T
J
150C.
Pulse width
300s; duty cycle
2%.
S
D
G
S
D
G
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
800
V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.90
V/C
R
DS(on)
Static Drain-to-Source On-Resistance
3.0
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
gfs
Forward Transconductance
2.5
S
I
DSS
Drain-to-Source Leakage Current
100
A
500
I
GSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
Q
g
Total Gate Charge
78
nC
Q
gs
Gate-to-Source Charge
9.6
Q
gd
Gate-to-Drain ("Miller") Charge
45
t
d(on)
Turn-On Delay Time
12
t
r
Rise Time
33
ns
t
d(off)
Turn-Off Delay Time
82
t
f
Fall Time
30
L
D
Internal Drain Inductance
4.5
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance
7.5
from package
and center of die contact
C
iss
Input Capacitance
1300
C
oss
Output Capacitance
310
pF
C
rss
Reverse Transfer Capacitance
190
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
4.1
(Body Diode)
A
I
SM
Pulsed Source Current
16
(Body Diode)
V
SD
Diode Forward Voltage
1.8
V
t
rr
Reverse Recovery Time
480
720
ns
Q
rr
Reverse Recovery Charge
1.8
2.7
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
V
GS
= 0V, I
D
= 250A
Reference to 25C, I
D
= 1mA
V
GS
= 10V, I
D
= 2.5A
f
V
DS
= V
GS
, I
D
= 250A
V
DS
= 800V, V
GS
= 0V
V
DS
= 640V, V
GS
= 0V, T
J
= 125C
R
G
= 12
I
D
= 4.1A
V
DS
= 100V, I
D
= 2.5A
V
DD
= 400V
I
D
= 4.1A
V
GS
= 20V
V
GS
= -20V
T
J
= 25C, I
F
= 4.1A
di/dt = 100A/s
f
T
J
= 25C, I
S
= 4.1A, V
GS
= 0V
f
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
GS
= 0V
V
DS
= 25V
Conditions
V
DS
= 400V
V
GS
= 10V, See Fig. 6 & 13
f
= 1.0MHz, See Fig. 5
R
D
= 95
,
See Fig. 10
f
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