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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25C
Continuous Drain Current
1.0
ID @ VGS = 10V, TC = 100C Continuous Drain Current
0.6
IDM
Pulsed Drain Current
4.0
PD @ TC = 25C
Max. Power Dissipation
1.4
W
Linear Derating Factor
0.011
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
75
mJ
IAR
Avalanche Current
--
A
EAR
Repetitive Avalanche Energy
--
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.63 in./1.6 mm from case for 10s)
Weight
1.3 (Typical)
g
PD - 90396G
HEXFET
MOSFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor's totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
o
C
A
POWER MOSFET
THRU-HOLE (MO-036AB)
04/16/02
www.irf.com
1
MO-036AB
Product Summary
Part Number R
DS(on)
I
D
IRFG110 0.7
1.0A
Features:
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Electrically Isolated
n
Dynamic dv/dt Rating
n
Light-weight
For footnotes refer to the last page
IRFG110
JANTX2N7334
JANTXV2N7334
REF:MIL-PRF-19500/597
100V, QUAD N-CHANNEL
HEXFET
MOSFET TECHNOLOGY
IRFG110
2
www.irf.com
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
--
--
V
VGS = 0V, ID = 1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
0.13
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.7
VGS = 10V, ID = 0.6A
Resistance
--
--
0.8
VGS = 10V, ID = 1.0A
VGS(th)
Gate Threshold Voltage
2.0
--
4.0
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
0.86
--
--
S (
)
VDS > 15V, IDS = 0.6A
IDSS
Zero Gate Voltage Drain Current
--
--
25
VDS= 80V ,VGS=0V
--
--
250
VDS = 80V,
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
--
--
15
VGS =10V, ID = 1.0A
Qgs
Gate-to-Source Charge
--
--
7.5
nC
VDS = 50V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
7.5
td
(on)
Turn-On Delay Time
--
--
20
VDD = 50V, ID = 1.0A,
tr
Rise Time
--
--
25
VGS =10V, RG = 7.5
td
(off)
Turn-Off Delay Time
--
--
40
tf
Fall Time
--
--
40
LS + LD
Total Inductance
--
10
--
Ciss
Input Capacitance
--
180
--
VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
82
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
15
--
nA
nH
ns
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
17
RthJA
Junction-to-Ambient
--
--
90
Typical socket mount
C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
1.0
ISM
Pulse Source Current (Body Diode)
--
--
4.0
VSD
Diode Forward Voltage
--
--
1.5
V
T
j
= 25C, IS = 1.0A, VGS = 0V
trr
Reverse Recovery Time
--
--
200
nS
Tj = 25C, IF = 1.0A, di/dt
100A/
s
QRR Reverse Recovery Charge
--
--
0.83
C
VDD
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
www.irf.com
3
IRFG110
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRFG110
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13a & b
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5
IRFG110
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
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