IRFI9540N
PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1487B
V
DSS
= -100V
R
DS(on)
= 0.117
I
D
= -15A
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
P-Channel
l
Fully Avalanche Rated
TO-220 FULLPAK
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
2.8
R
JA
Junction-to-Ambient
65
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
3/16/98
Description
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ -10V
-15
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ -10V
-10
A
I
DM
Pulsed Drain Current
-76
P
D
@T
C
= 25C
Power Dissipation
54
W
Linear Derating Factor
0.36
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
430
mJ
I
AR
Avalanche Current
-11
A
E
AR
Repetitive Avalanche Energy
5.4
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 screw
10 lbfin (1.1Nm)
Absolute Maximum Ratings
C/W
S
D
G
IRFI9540N
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.6
V
T
J
= 25C, I
S
= -7.8A, V
GS
= 0V
t
rr
Reverse Recovery Time
150
220
ns
T
J
= 25C, I
F
= -11A
Q
rr
Reverse Recovery Charge
830 1200
nC
di/dt = -100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-100
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.11
V/C
Reference to 25C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.117
V
GS
= -10V, I
D
= -7.8A
V
GS(th)
Gate Threshold Voltage
-2.0
-4.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
5.3
S
V
DS
= -50V, I
D
= -11A
-25
A
V
DS
= -100V, V
GS
= 0V
-250
V
DS
= -80V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
97
I
D
= -11A
Q
gs
Gate-to-Source Charge
15
nC
V
DS
= -80V
Q
gd
Gate-to-Drain ("Miller") Charge
51
V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
15
V
DD
= -50V
t
r
Rise Time
67
I
D
= -11A
t
d(off)
Turn-Off Delay Time
51
R
G
= 5.1
t
f
Fall Time
51
R
D
= 4.2
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
1300
V
GS
= 0V
C
oss
Output Capacitance
400
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
240
= 1.0MHz, See Fig. 5
C
Drain to Sink Capacitance
12
= 1.0MHz
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
pF
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25C, L = 7.1mH
R
G
= 25
, I
AS
= -11A. (See Figure 12)
t=60s, =60Hz
I
SD
-11A, di/dt
-470A/s, V
DD
V
(BR)DSS
,
T
J
175C
Uses IRF9540N data and test conditions
Pulse width
300s; duty cycle
2%.
Source-Drain Ratings and Characteristics
A
-15
-76
S
D
G
S
D
G
IRFI9540N
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
0.1
1
1 0
1 0 0
D
D S
2 0 s P U L S E W ID T H
T = 2 5 C
c
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , D ra in-to-S o urc e V o ltage (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4 .5 V
1
10
1 0 0
0.1
1
10
1 0 0
D
D S
A
-
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-V , D ra in-to-S o urc e V o lta ge (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4 .5 V
2 0 s P U L S E W ID T H
T = 1 7 5 C
C
0.1
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 2 5 C
J
G S
D
A
-
I
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-V , G a te -to -S o u rc e V o lta g e (V )
V = -2 5 V
2 0 s P U L S E W ID T H
D S
T = 1 7 5 C
J
0.0
0.5
1.0
1.5
2.0
2.5
-60
-40
-20
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , J unc tion T em perature (C )
R
, D
r
a
i
n
-
to
-S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(N
o
r
m
a
l
i
z
e
d
)
A
V = -1 0 V
G S
I = -1 9 A
D
IRFI9540N
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
50 0
100 0
150 0
200 0
250 0
300 0
1
1 0
1 00
C
,
C
apaci
t
a
n
c
e
(
p
F
)
A
D S
-V , D rain-to -S ourc e V oltage (V )
V = 0 V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
is s
C
o s s
C
rs s
0
4
8
1 2
1 6
2 0
0
20
40
60
80
10 0
G
GS
A
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(V
)
Q , Tota l G ate C h arg e (n C )
V = -8 0 V
V = -5 0 V
V = -2 0 V
D S
D S
D S
F O R T E S T C IR C U IT
S E E F IG U R E 1 3
I = -1 1 A
D
0.1
1
1 0
1 0 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T = 2 5 C
J
V = 0 V
G S
S D
SD
A
-I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(A
)
-V , S o urc e-to -D rain V o lta ge (V )
T = 1 7 5 C
J
1
1 0
1 00
10 00
1
1 0
100
1 00 0
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (on)
10m s
A
-
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
-V , D ra in-to-S o urc e V o lta ge (V )
D S
D
1 0 0 s
1m s
T = 2 5 C
T = 1 7 5 C
S in g le P u ls e
C
J
IRFI9540N
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
5
10
15
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
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