IRFI9634G
PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1488
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.Third Generation HEXFETs from
International Rectifier provide the designer with the
best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ -10V
-4.1
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ -10V
-2.6
A
I
DM
Pulsed Drain Current
-16
P
D
@T
C
= 25C
Power Dissipation
35
W
Linear Derating Factor
0.28
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
520
mJ
I
AR
Avalanche Current
-4.1
A
E
AR
Repetitive Avalanche Energy
3.5
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 screw
10 lbfin (1.1Nm)
Absolute Maximum Ratings
V
DSS
= -250V
R
DS(on)
= 1.0
I
D
= -4.1A
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
150C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
Description
8/8/96
S
D
G
TO-220 FULLPAK
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.6
R
JA
Junction-to-Ambient
65
Thermal Resistance
C/W
IRFI9634G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-6.5
V
T
J
= 25C, I
S
= -4.1A, V
GS
= 0V
t
rr
Reverse Recovery Time
190
290
ns
T
J
= 25C, I
F
= -4.1A
Q
rr
Reverse RecoveryCharge
1.5
2.2
C
di/dt = -100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-250
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.27
V/C
Reference to 25C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance
1.0
V
GS
= -10V, I
D
= -2.5A
V
GS(th)
Gate Threshold Voltage
-2.0
-4.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
2.2
S
V
DS
= -50V, I
D
= -4.1A
-25
A
V
DS
= -250V, V
GS
= 0V
-250
V
DS
= -200V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
38
I
D
= -4.1A
Q
gs
Gate-to-Source Charge
8.0
nC
V
DS
= -200V
Q
gd
Gate-to-Drain ("Miller") Charge
18
V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
12
V
DD
= -130V
t
r
Rise Time
23
I
D
= -4.1A
t
d(off)
Turn-Off Delay Time
34
R
G
= 12
t
f
Fall Time
21
R
D
= 31
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
680
V
GS
= 0V
C
oss
Output Capacitance
170
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
40
= 1.0MHz, See Fig. 5
C
Drain to Sink Capacitance
12
= 1.0MHz
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-4.1A, di/dt
-640A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Starting T
J
= 25C, L = 62mH
R
G
= 25
, I
AS
= -4.1A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
S
D
G
Source-Drain Ratings and Characteristics
A
S
D
G
-4.1
-16
IRFI9634G
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics,
T
J
= 150
o
C
Fig 1. Typical Output Characteristics,
T
J
= 25
o
C
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
1
1 0
1 0 0
D
D S
20 s P U L S E W ID T H
T = 25 C
c
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , D ra in-to-S ou rce V oltage (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4 .5V
1
1 0
1 0 0
1
1 0
1 0 0
D
D S
2 0 s P U LS E W ID T H
T = 1 50 C
C
A
-
I
,
Dr
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
n
t
(
A
)
-V , D rain-to-S ource V oltage (V )
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5 V
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 25 C
T = 1 5 0 C
J
J
G S
D
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , Ga te -to-S ource V olta ge (V )
V = -5 0 V
2 0 s P U L S E W ID TH
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
J
T , Junction T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
ta
n
c
e
D
S
(
on)
(N
o
r
m
a
l
i
z
e
d
)
A
V = -1 0V
G S
I = -4.1 A
D
IRFI9634G
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
1 2
1 6
2 0
0
1 0
2 0
3 0
4 0
G
GS
A
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q , Total G ate C harge (nC )
F O R T E S T C IR C U IT
S E E F IG U R E 1 3
I = -4 .1 A
V = -20 0V
V = -12 5V
V = -50 V
D
D S
D S
D S
0 . 1
1
1 0
1 0 0
1 . 0
2 . 0
3 . 0
4 . 0
5 . 0
T = 2 5 C
T = 1 50 C
J
J
V = 0V
G S
S D
SD
A
-I
,
R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , S o urc e-to -D ra in V o lta ge (V )
0.1
1
1 0
1 0 0
1 0
1 0 0
1 0 0 0
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
T = 25 C
T = 15 0C
S ing le P u ls e
C
J
1 0 m s
A
-I
,
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , D ra in -to -S o urc e V o lta g e (V )
D S
D
1 0 0 s
1 m s
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
A
D S
-V , D rain-to-S ourc e V oltage (V )
V = 0V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
is s
C
os s
C
rs s
IRFI9634G
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0 . 0
1 . 0
2 . 0
3 . 0
4 . 0
5 . 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
C
T , C as e Te m perature (C )
A
-I
,
D
r
a
i
n
C
u
rre
n
t
(A
m
p
s
)
D
0 . 0 1
0 . 1
1
1 0
0 . 0 0 0 0 1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
t , R e c ta n g u la r P u lse D u ra tio n (se c )
1
th
J
C
D = 0 .5 0
0 .01
0 .02
0 .0 5
0 .1 0
0 .2 0
S IN G L E P U L S E
( T H E R M A L R E S P O N S E )
A
T
h
er
m
a
l
R
e
s
p
on
s
e
(Z
)
P
t
2
1
t
D M
N o te s :
1 . D u ty f ac t or D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
IRFI9634G
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
A S
R G
IA S
0 .0 1
t p
D .U .T
L
V
D S
VD D
D R IV E R
A
1 5 V
-2 0 V
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
J
E
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
lanc
he E
n
er
gy
(
m
J
)
AS
A
S ta rtin g T , J u nc tio n T em p e ra ture (C )
I
TO P -4 .1 A
-5.2 A
B O T T O M -8 .2A
D
IRFI9634G
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Reverse Polarity of D.U.T for P-Channel
V
GS
[ ]
[ ]
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
IRFI9634G
P A R T N U M B E R
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
L O T C O D E 9 B 1 M
A S S E M B L Y
L O T C O D E
D A T E C O D E
(Y Y W W )
Y Y = Y E A R
W W = W E E K
9 2 4 6
IR F 10 1 0
9B 1 M
A
Part Marking Information
TO-220 Fullpak
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
L E A D A S S IG N M E N T S
1 - G A TE
2 - D R A IN
3 - S O U R C E
N O T E S :
1 D IM E N S IO N IN G & T O L E R A N C IN G
P E R A N S I Y 1 4 .5 M , 1 9 8 2
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
D
C
A
B
M IN IM U M C R E E P A G E
D IS T A N C E B E TW E E N
A -B -C -D = 4.8 0 (.1 8 9 )
3 X
2 .8 5 (.1 1 2 )
2 .6 5 (.1 0 4 )
2 .8 0 (.1 1 0 )
2 .6 0 (.1 0 2 )
4 .8 0 (.1 8 9 )
4 .6 0 (.1 8 1 )
7 .10 (.2 8 0 )
6 .70 (.2 6 3 )
3 .4 0 (.1 3 3 )
3 .1 0 (.1 2 3 )
- A -
3 .7 0 (.1 4 5 )
3 .2 0 (.1 2 6 )
1 .1 5 (.0 4 5 )
M IN .
3.3 0 (.1 30 )
3.1 0 (.1 22 )
- B -
0 .9 0 (.0 35 )
0 .7 0 (.0 28 )
3 X
0 .2 5 (.0 1 0 )
M
A M B
2 .5 4 (.1 0 0 )
2X
3 X
1 3 .7 0 (.5 4 0 )
1 3 .5 0 (.5 3 0 )
1 6 .0 0 (.6 3 0 )
1 5 .8 0 (.6 2 2 )
1 2 3
1 0 .6 0 (.4 1 7 )
1 0 .4 0 (.4 0 9 )
1 .4 0 (.0 5 5)
1 .0 5 (.0 4 2)
0.4 8 (.0 1 9 )
0.4 4 (.0 1 7 )
P AR T N U M B ER
IN TE R N AT IO NA L
RE C TIF IE R
L O G O
DA T E CO D E
(Y YW W )
YY = YE A R
W W = W E E K
A S S EM BL Y
L O T C O D E
E 4 0 1 9 2 4 5
IR F I8 40G
E X A M P L E : TH IS IS A N IR FI840 G
W ITH AS S E M B LY
LO T C O DE E 401
A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
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http://www.irf.com/
Data and specifications subject to change without notice.
8/96
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