www.docs.chipfind.ru
IRFIB5N50L
08/19/04
www.irf.com
1
SMPS MOSFET
HEXFET
Power MOSFET
TO-220 Full-Pak
S
D
G
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise
immunity
.
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
V
DSS
R
DS(on)
typ.
Trr
typ.
I
D
500V
0.67
73ns
4.7A
PD - 94522B
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
4.7
I
D
@ T
C
= 100C Continuous Drain Current, V
GS
@ 10V
3.0
A
I
DM
Pulsed Drain Current
16
P
D
@T
C
= 25C Power Dissipation
42
W
Linear Derating Factor
0.33
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
d
19
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
4.7
MOSFET symbol
(Body Diode)
A
showing the
I
SM
Pulsed Source Current
16
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.5
V
T
J
= 25C, I
S
= 4.0A, V
GS
= 0V
f
t
rr
Reverse Recovery Time
73
110
ns
T
J
= 25C, I
F
= 4.0A
99
150
T
J
= 125C, di/dt = 100A/s
f
Q
rr
Reverse Recovery Charge
200
310
nC T
J
= 25C, I
S
= 4.0A, V
GS
= 0V
f
360
540
T
J
= 125C, di/dt = 100A/s
f
I
RRM
Reverse Recovery Current
6.7
10
A
T
J
= 25C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
10lb
x
in (1.1N
x
m)
IRFIB5N50L
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11).
Starting T
J
= 25C, L = 18mH, R
G
= 25
,
I
AS
= 4.0A, dv/dt = 19V/ns. (See Figure 17).
I
SD
4.0, di/dt
421A/s, V
DD
V
(BR)DSS
,
T
J
150C.
Notes:
Pulse width
300s; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff.(ER) is a fixed capacitance that stores the same energy
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Static @ T
J
= 25C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
500
V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.43
V/C
R
DS(on)
Static Drain-to-Source On-Resistance
0.67
0.80
V
GS(th)
Gate Threshold Voltage
3.0
5.0
V
I
DSS
Drain-to-Source Leakage Current
50
A
2.0
mA
I
GSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
R
G
Internal Gate Resistance
2.0
Dynamic @ T
J
= 25C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
2.8
S
Q
g
Total Gate Charge
45
Q
gs
Gate-to-Source Charge
13
nC
Q
gd
Gate-to-Drain ("Miller") Charge
23
t
d(on)
Turn-On Delay Time
13
t
r
Rise Time
17
ns
t
d(off)
Turn-Off Delay Time
26
t
f
Fall Time
10
C
iss
Input Capacitance
1000
C
oss
Output Capacitance
110
C
rss
Reverse Transfer Capacitance
12
C
oss
Output Capacitance
1360
pF
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
31
V
GS
= 0V, V
DS
= 400V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
75
C
oss
eff. (ER)
Effective Output Capacitance
55
(Energy Related)
Avalanche Characteristics
Symbol
Parameter
Typ.
Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Units
R
JC
Junction-to-Case
h
C/W
R
JA
Junction-to-Ambient
h
V
DS
= V
GS
, I
D
= 250A
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125C
Conditions
V
GS
= 0V, I
D
= 250A
Reference to 25C, I
D
= 1mA
V
GS
= 10V, I
D
= 2.4A
f
V
GS
= 30V
f = 1MHz, open drain
Conditions
V
DS
= 50V, I
D
= 2.4A
V
GS
= -30V
I
D
= 4.0A
V
DS
= 400V
V
GS
= 10V, See Fig. 7 & 16
f
V
DD
= 250V
I
D
= 4.0A
R
G
= 9.0
V
GS
= 10V, See Fig. 11a & 11b
f
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
4.0
3.0
Max.
140
V
GS
= 0V,V
DS
= 0V to 400V
g
65
Max.
3.0
R
is measured at T
J
approximately 90C
IRFIB5N50L
www.irf.com
3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM
5.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.5V
20s PULSE WIDTH
Tj = 150C
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM
5.5V
0.01
0.1
1
10
100
5.0
6.0
7.0
8.0
9.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
GS
D
T = 150 C
J
T = 25 C
J
-60
-40
-20
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
R
, D
r
a
i
n
-
to
-
S
o
u
r
ce
O
n
R
e
si
sta
n
c
e
(
N
or
m
a
l
i
z
ed)
D
S
(
on)
V
=
I
=
GS
D
10V
4.0A
Tj, Junction Temperature (C)
IRFIB5N50L
4
www.irf.com
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 8. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I
,
R
e
v
e
rs
e D
r
ai
n C
u
rrent
(A)
SD
SD
V = 0 V
GS
T = 150 C
J
T = 25 C
J
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
Fig 7. Typical Gate Charge vs.
Gate-to-Source Voltage
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
V ,
G
a
t
e
-
t
o-
Sour
c
e
Vol
t
age (
V
)
G
GS
I
=
D
4.0A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
Fig 6. Typ. Output Capacitance
Stored Energy vs. V
DS
0
100
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
0
1
2
3
4
5
6
7
8
9
10
E
n
e
r
g
y
(
J
)
IRFIB5N50L
www.irf.com
5
Fig 10. Maximum Drain Current vs.
Case Temperature
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C)
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
C
D
Fig 9. Maximum Safe Operating Area
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 150C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
Fig 11a. Switching Time Test Circuit
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11b. Switching Time Waveforms
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
PDF 
ZIP