IRFIZ34E
HEXFET
Power MOSFET
PD - 9.1674A
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
TO-220 FULLPAK
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
4.1
R
JA
Junction-to-Ambient
65
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
9/22/97
Description
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
21
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
15
A
I
DM
Pulsed Drain Current
100
P
D
@T
C
= 25C
Power Dissipation
37
W
Linear Derating Factor
0.24
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
110
mJ
I
AR
Avalanche Current
16
A
E
AR
Repetitive Avalanche Energy
3.7
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 screw
10 lbfin (1.1Nm)
Absolute Maximum Ratings
C/W
S
D
G
V
DSS
= 60V
R
DS(on)
= 0.042
I
D
= 21A
IRFIZ34E
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
60
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.052
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.042
V
GS
= 10V, I
D
= 11A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
6.5
S
V
DS
= 25V, I
D
= 16A
25
A
V
DS
= 60V, V
GS
= 0V
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
34
I
D
= 16A
Q
gs
Gate-to-Source Charge
6.8
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
14
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.0
V
DD
= 28V
t
r
Rise Time
49
I
D
= 16A
t
d(off)
Turn-Off Delay Time
31
R
G
= 18
t
f
Fall Time
40
R
D
= 1.8
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
700
V
GS
= 0V
C
oss
Output Capacitance
240
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
100
= 1.0MHz, See Fig. 5
C
Drain to Sink Capacitance
12
= 1.0MHz
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
pF
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25C, L = 610H
R
G
= 25
, I
AS
= 16A. (See Figure 12)
t=60s, =60Hz
I
SD
16A, di/dt
420A/s, V
DD
V
(BR)DSS
,
T
J
175C
Uses IRFZ34N data and test conditions
Pulse width
300s; duty cycle
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.6
V
T
J
= 25C, I
S
= 11A, V
GS
= 0V
t
rr
Reverse Recovery Time
57
86
ns
T
J
= 25C, I
F
= 16A
Q
rr
Reverse RecoveryCharge
130
200
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
21
100
IRFIZ34E
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 2 5 C
J
G S
V , Ga te -to -S o u rce V o lta g e (V )
D
I
,
D
r
ai
n-
t
o
-
S
our
c
e
C
u
r
r
e
nt
(
A
)
A
V = 2 5 V
2 0 s PU L SE W ID TH
T = 1 7 5 C
J
D S
0 . 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
2 . 4
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Ju nctio n T emp eratu re (C)
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
o
r
m
a
liz
e
d
)
V = 1 0V
G S
A
I = 26 A
D
1
10
100
1000
0.1
1
10
100
I
,
D
r
a
i
n-
t
o
-
S
ou
r
c
e
C
u
r
r
ent
(
A
)
D
V , D ra in-to-S ou rce V o lta ge (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
2 0 s PU LSE W ID TH
T = 2 5C
C
A
4 .5V
1
1 0
1 0 0
1 0 0 0
0 . 1
1
1 0
1 0 0
I
,
D
r
a
i
n-
t
o
-
S
ou
r
c
e
C
u
r
r
ent
(
A
)
D
V , Dra in -to-So urce V oltag e (V)
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
A
4 .5V
20 s PU L SE W ID TH
T = 175 C
C
IRFIZ34E
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1
1 0
1 0 0
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0V, f = 1 MH z
C = C + C , C SH O R TED
C = C
C = C + C
G S
iss gs gd ds
rss gd
oss ds gd
C
is s
C
o s s
C
rs s
0
4
8
1 2
1 6
2 0
0
1 0
2 0
3 0
4 0
Q , To tal Ga te Ch arg e (nC )
G
V
,
G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
FO R TES T C IR CU I T
SEE FIG U R E 13
V = 4 4V
V = 2 8V
DS
DS
I = 1 6A
D
1
1 0
1 0 0
1 0 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
T = 25 C
J
V = 0 V
G S
V , S o urce-to -Drain Vo lta ge (V )
I
,
Re
v
e
r
s
e
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
S D
SD
A
T = 175 C
J
IRFIZ34E
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
175
0
4
8
12
16
20
24
T , Case Temperature
( C)
I , Drain Current (A)
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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