HEXFET
Power MOSFET
IRFIZ46N
PD - 9.1306A
8/25/97
V
DSS
= 55V
R
DS(on)
= 0.020
I
D
= 33A
S
D
G
TO-220 FULLPAK
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
3.3
R
JA
Junction-to-Ambient
65
C/W
Thermal Resistance
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
33
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
23
A
I
DM
Pulsed Drain Current
180
P
D
@T
C
= 25C
Power Dissipation
45
W
Linear Derating Factor
0.3
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
230
mJ
I
AR
Avalanche Current
16
A
E
AR
Repetitive Avalanche Energy
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Absolute Maximum Ratings
IRFIZ46N
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.017
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.020
V
GS
= 10V, I
D
= 19A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
16
S
V
DS
= 25V, I
D
= 28A
25
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
61
I
D
= 28A
Q
gs
Gate-to-Source Charge
13
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
24
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
12
V
DD
= 28V
t
r
Rise Time
80
I
D
= 28A
t
d(off)
Turn-Off Delay Time
43
R
G
= 12
t
f
Fall Time
52
R
D
= 0.98
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
1500
V
GS
= 0V
C
oss
Output Capacitance
450
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
160
= 1.0MHz, See Fig. 5
C
Drain to Sink Capacitance
12
= 1.0MHz
nH
A
nA
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance
ns
S
D
G
4.5
7.5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
pF
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 19A, V
GS
= 0V
t
rr
Reverse Recovery Time
72
110
ns
T
J
= 25C, I
F
= 28A
Q
rr
Reverse Recovery Charge
210
310
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
A
180
33
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
t=60s, =60Hz
Uses IRFZ46N data and test conditions
I
SD
28A, di/dt
240A/s, V
DD
V
(BR)DSS
,
T
J
175C
V
DD
= 25V, starting T
J
= 25C, L = 410H
R
G
= 25
, I
AS
= 28A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
IRFIZ46N
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
10
100
1000
0.1
1
10
100
I
,
D
r
a
i
n-
t
o
-
S
ou
r
c
e
C
u
r
r
ent
(
A
)
D
V , D ra in-to-S ou rce V o lta ge (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
2 0 s PU LSE W ID TH
T = 2 5C
C
A
4.5 V
1
10
100
1000
0.1
1
10
100
4 .5V
I
,
D
r
a
i
n-
t
o
-
S
ou
r
c
e
C
u
r
r
ent
(
A
)
D
V , Dra in -to-So urce V oltag e (V)
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
20 s P UL SE W I DTH
T = 17 5C
C
A
1
1 0
1 0 0
1 0 0 0
4
5
6
7
8
9
1 0
T = 2 5 C
J
G S
V , Ga te -to -S o u rce V o l ta g e (V )
D
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T = 1 7 5 C
J
A
V = 2 5 V
2 0 s P U L SE W ID TH
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Ju nction T em pe rature (C )
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(
N
o
r
m
a
l
i
z
ed)
V = 10 V
G S
A
I = 2 8A
D
T
J
T
J
IRFIZ46N
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
400
800
1200
1600
2000
2400
2800
1
10
100
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0 V, f = 1M H z
C = C + C , C SH O RTE D
C = C
C = C + C
G S
is s gs gd ds
rs s gd
o ss ds g d
C
is s
C
o s s
C
rs s
0
4
8
12
16
20
0
10
20
30
40
50
60
Q , To tal Ga te Ch arg e (nC )
G
V
,
G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
FO R TES T C IR CU I T
SEE FIG U R E 13
V = 4 4V
V = 2 8V
I = 2 8A
D
DS
DS
1
1 0
1 0 0
1 0 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
2 . 4
T = 25 C
J
V = 0 V
G S
V , S o urce-to -Drain Vo lta ge (V )
I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 17 5C
J
1
10
100
1000
1
10
100
V , Dra in -to-So urce Vo ltag e (V)
D S
I
,
D
r
ai
n C
u
r
r
en
t
(
A
)
OPE R ATIO N IN TH IS A RE A LI MI TE D
BY R
D
D S(o n)
1 0s
1 00s
1m s
10m s
A
T = 25 C
T = 17 5C
S ing le Pulse
C
J
IRFIZ46N
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
T , Case Temperature
( C)
I , Drain Current (A)
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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