1/19/00
IRFL014N
PD- 92003A
www.irf.com
1
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.16
I
D
= 1.9A
Fifth Generation HEXFET
MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET
power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Description
l
Surface Mount
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
Fast Switching
l
Fully Avalanche Rated
Parameter
Typ.
Max.
Units
R
JA
Junction-to-Amb. (PCB Mount, steady state)*
90
120
R
JA
Junction-to-Amb. (PCB Mount, steady state)**
50
60
Thermal Resistance
C/W
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V**
2.7
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V*
1.9
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V*
1.5
I
DM
Pulsed Drain Current
15
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)**
2.1
W
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)*
1.0
W
Linear Derating Factor (PCB Mount)*
8.3
mW/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
48
mJ
I
AR
Avalanche Current
1.7
A
E
AR
Repetitive Avalanche Energy
*
0.1
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Absolute Maximum Ratings
A
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
SOT-223
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.054
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.16
V
GS
= 10V, I
D
= 1.9A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
1.6
S
V
DS
= 25V, I
D
= 0.85A
1.0
A
V
DS
= 44V, V
GS
= 0V
25
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
7.0
11
I
D
= 1.7A
Q
gs
Gate-to-Source Charge
1.2
1.8
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
3.3
5.0
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
6.6
V
DD
= 28V
t
r
Rise Time
7.1
I
D
= 1.7A
t
d(off)
Turn-Off Delay Time
12
R
G
= 6.0
t
f
Fall Time
3.3
R
D
= 16
, See Fig. 10
C
iss
Input Capacitance
190
V
GS
= 0V
C
oss
Output Capacitance
72
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
33
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.0
V
T
J
= 25C, I
S
= 1.7A, V
GS
= 0V
t
rr
Reverse Recovery Time
41
61
ns
T
J
= 25C, I
F
= 1.7A
Q
rr
Reverse RecoveryCharge
64
95
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
15
1.3
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
1.7A, di/dt
250A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
V
DD
= 25V, starting T
J
= 25C, L = 8.2mH
R
G
= 25
, I
AS
= 3.4A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
IRFL014N
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3
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I
,
D
r
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
nt
(
A
)
D
V , D ra in-to-S o urc e V olta ge (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20 s P U LS E W ID TH
T = 2 5C
C
A
4.5 V
0.1
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I
,
D
r
ain-
t
o
-
S
ou
r
c
e C
u
r
r
e
nt
(
A
)
D
V , D ra in-to-S o u rce V o lta ge (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20 s P U LS E W ID TH
T = 1 50 C
A
4 .5V
J
0 . 1
1
1 0
1 0 0
4
5
6
7
8
9
T = 25 C
T = 1 5 0 C
J
J
G S
V , G ate-to -S o urce V oltag e (V )
D
I
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
A
V = 2 5 V
2 0 s P UL S E W ID TH
D S
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
J
T , Junction T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
ta
n
c
e
D
S
(
on)
(N
o
r
m
a
l
i
z
e
d
)
V = 10 V
G S
A
I = 1 .7A
D
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4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
3 5 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to-S ourc e V oltage (V )
A
V = 0V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
iss g s g d d s
rs s g d
o ss ds g d
C
is s
C
os s
C
rs s
0
4
8
1 2
1 6
2 0
0
2
4
6
8
1 0
Q , T otal G ate C harge (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
I = 1.7 A
V = 44 V
V = 28 V
V = 11 V
F O R TE S T C IR C U IT
S E E F IG U R E 9
D
D S
D S
D S
0 . 1
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
T = 25 C
T = 1 50 C
J
J
V = 0V
G S
V , S o urc e-to -D ra in V o lta ge (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
0.1
1
1 0
1 0 0
1
1 0
1 0 0
V , D ra in-to-S o u rce V o lta ge (V )
D S
I , D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D
D S (o n)
1 0 0 s
1 m s
1 0 m s
A
T = 25 C
T = 15 0C
S ing le P u ls e
A
J
IRFL014N
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5
+
-
V
DS
10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
10V
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0 . 1
1
1 0
1 0 0
1 0 0 0
0 . 0 0 0 0 1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
t , Re ctan gular P ulse D u ration (se c)
1
D = 0.5 0
0 .01
0 .02
0 .05
0.10
0.20
S ING L E P U LS E
(T H E R M A L R E S P O NS E )
A
T
herm
a
l
R
e
s
pon
s
e
(
Z
)
th
J
A
P
t 2
1
t
D M
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J A
A
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