IRFL1006
HEXFET
Power MOSFET
PD - 91876
S
D
G
V
DSS
= 60V
R
DS(on)
= 0.22
I
D
= 1.6A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
3/29/99
Description
l
Surface Mount
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
Fast Switching
l
Fully Avalanche Rated
S O T -2 2 3
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Parameter
Typ.
Max.
Units
R
JA
Junction-to-Amb. (PCB Mount, steady state)*
90
120
R
JA
Junction-to-Amb. (PCB Mount, steady state)**
50
60
Thermal Resistance
C/W
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V**
2.3
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V*
1.6
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V*
1.3
I
DM
Pulsed Drain Current
6.4
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)**
2.1
W
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)*
1.0
W
Linear Derating Factor (PCB Mount)*
8.3
mW/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
54
mJ
I
AR
Avalanche Current
1.6
A
E
AR
Repetitive Avalanche Energy
*
0.1
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Absolute Maximum Ratings
A
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1
IRFL1006
2
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Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
1.6A, di/dt
260A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Starting T
J
= 25C, L = 42 mH
R
G
= 25
, I
AS
= 1.6A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 1.6A, V
GS
= 0V
t
rr
Reverse Recovery Time
31
47
ns
T
J
= 25C, I
F
= 1.6A
Q
rr
Reverse RecoveryCharge
46
68
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
6.4
1.6
A
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
60
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.057
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.22
V
GS
= 10V, I
D
= 1.6A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
3.0
S
V
DS
= 25V, I
D
= 1.6A
25
A
V
DS
= 60V, V
GS
= 0V
250
V
DS
= 48V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
8.0
I
D
= 1.6A
Q
gs
Gate-to-Source Charge
1.7
nC
V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge
3.3
V
GS
= 10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time
7.4
V
DD
= 30V
t
r
Rise Time
18
I
D
= 1.6A
t
d(off)
Turn-Off Delay Time
18
R
G
= 49
t
f
Fall Time
17
R
D
= 19
, See Fig. 10
C
iss
Input Capacitance
160
V
GS
= 0V
C
oss
Output Capacitance
55
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
19
= 1.0MHz, See Fig. 5
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
IRFL1006
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
4.0
5.0
6.0
7.0
8.0
V = 25V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
1.6A
IRFL1006
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
2
4
6
8
10
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.6A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
0.1
1
10
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
1
10
100
0
60
120
180
240
300
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
IRFL1006
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
T , Case Temperature
( C)
I , Drain Current (A)
C
D
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
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