IRFL4105
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.045
I
D
= 3.7A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of 1.0W
is possible in a typical surface mount application.
1/14/99
Description
l
Surface Mount
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
Fast Switching
l
Fully Avalanche Rated
S O T -2 2 3
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Parameter
Typ.
Max.
Units
R
JA
Junction-to-Amb. (PCB Mount, steady state)*
90
120
R
JA
Junction-to-Amb. (PCB Mount, steady state)**
50
60
Thermal Resistance
C/W
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V**
5.2
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V*
3.7
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V*
3.0
I
DM
Pulsed Drain Current
30
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)**
2.1
W
P
D
@T
A
= 25C
Power Dissipation (PCB Mount)*
1.0
W
Linear Derating Factor (PCB Mount)*
8.3
mW/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
110
mJ
I
AR
Avalanche Current
3.7
A
E
AR
Repetitive Avalanche Energy
0.10
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Absolute Maximum Ratings
A
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1
PD- 91381A
IRFL4105
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.058
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.045
V
GS
= 10V, I
D
= 3.7A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
3.8
S
V
DS
= 25V, I
D
= 1.9A
25
A
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
23
35
I
D
= 3.7A
Q
gs
Gate-to-Source Charge
3.4
5.1
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
9.8
15
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.1
V
DD
= 28V
t
r
Rise Time
12
I
D
= 3.7A
t
d(off)
Turn-Off Delay Time
19
R
G
= 6.0
t
f
Fall Time
12
R
D
= 7.5
,
See Fig. 10
C
iss
Input Capacitance
660
V
GS
= 0V
C
oss
Output Capacitance
230
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
99
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
3.7A, di/dt
110A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
V
DD
= 25V, starting T
J
= 25C, L = 16mH
R
G
= 25
, I
AS
= 3.7A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 3.7A, V
GS
= 0V
t
rr
Reverse Recovery Time
55
82
ns
T
J
= 25C, I
F
= 3.7A
Q
rr
Reverse RecoveryCharge
120
170
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
30
1.3
A
IRFL4105
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Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics,
T
J
= 25
o
C
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I
,
D
r
ai
n-
t
o
-
S
ou
r
c
e C
u
r
r
e
nt
(
A
)
D
V , D ra in-to-S o u rce V o lta ge (V )
D S
VGS
TO P 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BO TTOM 4.5V
2 0 s P U L S E W ID T H
T = 25 C
C
A
4 .5 V
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I
,
D
r
ain-
t
o
-
S
ou
r
c
e C
u
r
r
e
nt
(
A
)
D
V , D ra in-to-S o u rce V o lta ge (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20 s P U LS E W ID TH
T = 1 50 C
A
4 .5V
J
Fig 2. Typical Output Characteristics,
T
J
= 150
o
C
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
J
T , J unc tion T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(N
o
r
m
a
li
z
e
d
)
V = 1 0V
G S
A
I = 3.7 A
D
1
1 0
1 0 0
4 . 0
4 . 5
5 . 0
5 . 5
6 . 0
6 . 5
7 . 0
G S
V , G ate-to -S o urce V oltag e (V )
D
I
,
D
r
a
i
n
-
t
o
-
S
o
u
rc
e
C
u
rre
n
t
(A
)
A
V = 2 5 V
2 0 s P UL S E W ID TH
T = 1 5 0 C
T = 2 5C
D S
J
J
IRFL4105
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to-S ourc e V oltage (V )
A
V = 0V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
iss
C
os s
C
rs s
0
4
8
1 2
1 6
2 0
0
1 0
2 0
3 0
4 0
Q , T otal G ate C harge (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
F O R TE S T C IR C U IT
S E E F IG U R E 9
V = 24 V
V = 15 V
D S
D S
I = 3.7 A
D
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
1 . 6
T = 25 C
T = 1 50 C
J
J
V = 0V
G S
V , S ourc e-to-D ra in V olta ge (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
0.1
1
1 0
1 0 0
0.1
1
1 0
1 0 0
V , D rain-to-S ource V oltage (V )
D S
I
,
Dr
ai
n
C
u
r
r
e
nt
(
A
)
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D
D S (o n)
T = 25 C
T = 15 0C
S ing le P u ls e
1 0 s
1 0 0 s
1 m s
1 0 m s
A
A
J
IRFL4105
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5
Q
G
Q
GS
Q
GD
V
G
Charge
+
-
V
DS
10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
0 . 0 0 0 0 1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
1 0 0 0 0
t , R e c ta n g u la r P u lse D u ra tio n (se c )
1
D = 0 .5 0
0 .0 1
0 .0 2
0 .0 5
0 .1 0
0 .2 0
S IN G L E P U L S E
( T H E R M A L R E S P O N S E )
A
T
herm
a
l
R
e
s
pon
s
e
(
Z
)
th
J
A
P
t
2
1
t
D M
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J A
A
10V
IRFL4105
6
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
J
E
, S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
AS
A
S tarting T , J unc tion T em perature (C )
V = 25 V
I
TO P 1 .7A
3 .0A
B O T T O M 3.7 A
D D
D
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(B R )D SS
I
A S
R G
I
A S
0 .0 1
tp
D .U .T
L
V D S
+
-
VD D
D R IV E R
A
1 5 V
20 V
IRFL4105
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7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Fig 13. For N-Channel HEXFETS
IRFL4105
8
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Package Outline
SOT-223 (TO-261AA) Outline
SOT-223
Part Marking Information
D A TE CO D E (Y W W )
Y = LA S T D IG IT O F TH E Y E A R
W W = W E E K
B O TT O M
P A R T NU M B E R
T O P
IN TE RN A TIO NA L
RE CT IF IE R
LO G O
E X A M P L E : T H IS IS A N IR FL 0 14
W A F E R
LO T CO D E
X X X X X X
31 4
F L0 14
IRFL4105
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9
SOT-223 Outline
Tape & Reel Information
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 4 )
1 .8 5 (.0 7 2 )
1 .6 5 (.0 6 5 )
2 .0 5 ( .0 8 0 )
1 .9 5 ( .0 7 7 )
1 2 .1 0 ( .4 7 5 )
1 1 .9 0 ( .4 6 9 )
7 .1 0 ( .2 7 9 )
6 .9 0 ( .2 7 2 )
1 .6 0 ( .0 6 2 )
1 .5 0 ( .0 5 9 )
T Y P .
7 .5 5 (.2 9 7)
7 .4 5 (.2 9 4)
7 .6 0 ( .2 9 9 )
7 .4 0 ( .2 9 2 )
2 .3 0 ( .0 9 0 )
2 .1 0 ( .0 8 3 )
1 6 .3 0 ( .6 4 1 )
1 5 .7 0 ( .6 1 9 )
0 .3 5 (.0 1 3 )
0 .2 5 (.0 1 0 )
F E E D D IR E C T IO N
T R
1 3 . 2 0 (.5 1 9 )
1 2 . 8 0 (.5 0 4 )
5 0. 00 ( 1 .9 6 9 )
M IN .
330.00
(13.000)
M A X .
N O T E S :
1 . C O N T R O L L I N G D IM E N S I O N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 . E A C H O 3 30 . 0 0 (1 3 .0 0 ) R E E L C O N T A I N S 2 ,5 0 0 D E V I C E S .
3
N O T E S :
1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 - 1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . .
3 . D IM E N S IO N M E A S U R E D @ H U B .
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
1 5 .40 ( .6 0 7)
1 1 .90 ( .4 6 9)
1 8 .4 0 (. 72 4 )
M A X .
1 4 .4 0 (. 5 6 6 )
1 2 .4 0 (. 4 8 8 )
4
4
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http://www.irf.com/ Data and specifications subject to change without notice. 1/99
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