IRFP054N
HEXFET
Power MOSFET
PD - 9.1382A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
S
D
G
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
81
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
57
A
I
DM
Pulsed Drain Current
290
P
D
@T
C
= 25C
Power Dissipation
170
W
Linear Derating Factor
1.1
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
360
mJ
I
AR
Avalanche Current
43
A
E
AR
Repetitive Avalanche Energy
17
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 srew
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.90
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
C/W
R
JA
Junction-to-Ambient
40
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 0.012
I
D
= 81A
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
8/25/97
TO-247AC
IRFP054N
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 43A, V
GS
= 0V
t
rr
Reverse Recovery Time
81
120
ns
T
J
= 25C, I
F
= 43A
Q
rr
Reverse RecoveryCharge
240
370
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.06
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.012
V
GS
= 10V, I
D
= 43A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
30
S
V
DS
= 25V, I
D
= 43A
25
A
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
130
I
D
= 43A
Q
gs
Gate-to-Source Charge
23
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
53
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
11
V
DD
= 28V
t
r
Rise Time
66
I
D
= 43A
t
d(off)
Turn-Off Delay Time
40
R
G
= 3.6
t
f
Fall Time
46
R
D
= 0.62
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
2900
V
GS
= 0V
C
oss
Output Capacitance
880
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
330
= 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
5.0
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
43A, di/dt
260A/s, V
DD
V
(BR)DSS
,
T
J
175C
Notes:
V
DD
= 25V, starting T
J
= 25C, L = 390H
R
G
= 25
, I
AS
= 43A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
81
290
A
13
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
Uses IRF1010N data and test conditions
IRFP054N
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
0.1
1
10
100
I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
D
V , Dra in -to -So urce Vo lta ge (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20 s PU L SE W ID TH
T = 2 5C
C
A
4 .5V
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Ju nctio n T emp eratu re (C)
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed
)
V = 10 V
G S
A
I = 72 A
D
10
100
1000
0.1
1
10
100
4 .5V
I
,
D
r
a
i
n-
t
o
-
S
ou
r
c
e
C
u
r
r
ent
(
A
)
D
V , Dra in -to-So urce V oltag e (V)
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
20 s P UL SE W I DTH
T = 17 5C
C
A
1
1 0
1 0 0
1 0 0 0
4
5
6
7
8
9
1 0
T = 2 5 C
J
G S
V , Ga te -to -S o u rce V o lta g e (V )
D
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T = 1 7 5 C
J
A
V = 2 5 V
2 0 s P U L SE W ID TH
DS
IRFP054N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
1
10
100
C
,
C
a
p
a
c
i
t
a
nc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0 V, f = 1M H z
C = C + C , C SH O RTE D
C = C
C = C + C
G S
is s gs gd ds
rs s gd
o ss ds g d
C
is s
C
o s s
C
rs s
0
4
8
12
16
20
0
20
40
60
80
100
120
140
Q , T otal G ate Ch arg e (n C)
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
FO R TE ST C IR C U IT
SEE FIG U R E 13
I = 4 3A
V = 4 4V
V = 2 8V
D
D S
D S
1 0
1 0 0
1 0 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
2 . 4
2 . 8
T = 2 5C
J
V = 0 V
G S
V , So u rce-to -D ra in Vo lta ge (V )
I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 17 5 C
J
1
10
100
1000
1
10
100
V , D rain-to-S ou rce V olta ge (V)
D S
I ,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
O PER ATION IN TH IS AR EA L IMI TED
BY R
D
DS (on)
10 s
100 s
1 ms
10m s
A
T = 2 5C
T = 1 75 C
Sing le P uls e
C
J
IRFP054N
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
20
40
60
80
100
T , Case Temperature
( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
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