IRFP17N50L
09/20/01
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1
SMPS MOSFET
HEXFET
Power MOSFET
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
16
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
11
A
I
DM
Pulsed Drain Current
64
P
D
@T
C
= 25C
Power Dissipation
220
W
Linear Derating Factor
1.8
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
13
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300
(1.6mm from case )
C
Absolute Maximum Ratings
Benefits
Applications
Mounting Torque, 6-32 or M3 screw
lbft.in(N.m)
10
l
Switch Mode Power Supply (SMPS)
l
Zero Voltage Switching (ZVS) and High
Frequency Circuit
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
PWM Inverters
l
Low Gate Charge Qg results in Simple Drive Requirement
l
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l
Fully Characterized Capacitance and Avalanche Voltage
and Current
l
Low Trr and Soft Diode Recovery
l
High Performance Optimised Anti-parallel Diode
S
D
G
Diode Characteristics
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
16
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
64
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.5
V
T
J
= 25C, I
S
= 16A, V
GS
= 0V
170
250
T
J
= 25C
I
F
= 16A
220
330
T
J
= 125C
di/dt = 100A/s
470
710
T
J
= 25C
810 1210
T
J
= 125C
I
RRM
Reverse Recovery Current
7.3
11
A
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
ns
nC
TO-247AC
V
DSS
R
DS(on)
typ.
T
rr
typ.
I
D
500V
0.28
170ns
16A
PD - 94322
IRFP17N50L
2
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Symbol
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
500
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.6
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.28 0.32
V
GS
= 10V, I
D
= 9.9A
V
GS(th)
Gate Threshold Voltage
3.0
5.0
V
V
DS
= V
GS
, I
D
= 250A
50
A
V
DS
= 500V, V
GS
= 0V
2.0
mA
V
DS
= 400V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
Static @ T
J
= 25C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
16A, di/dt
347A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Starting T
J
= 25C, L = 3.0mH, R
G
= 25
,
I
AS
= 16A.
Pulse width
300s; duty cycle
2%.
Symbol
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
390
mJ
I
AR
Avalanche Current
16
A
E
AR
Repetitive Avalanche Energy
22
mJ
Avalanche Characteristics
Symbol
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.56
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
Dynamic @ T
J
= 25C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
11
S
V
DS
= 50V, I
D
= 9.9A
Q
g
Total Gate Charge
130
I
D
= 16A
Q
gs
Gate-to-Source Charge
33
nC
V
DS
= 400V
Q
gd
Gate-to-Drain ("Miller") Charge
59
V
GS
= 10V
t
d(on)
Turn-On Delay Time
21
V
DD
= 250V
t
r
Rise Time
51
I
D
= 16A
t
d(off)
Turn-Off Delay Time
50
R
G
= 7.5
t
f
Fall Time
28
V
GS
= 10V
C
iss
Input Capacitance
2760
V
GS
= 0V
C
oss
Output Capacitance
325
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
37
pF
= 1.0MHz
C
oss
Output Capacitance
3690
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
84
V
GS
= 0V, V
DS
= 400V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
159
V
GS
= 0V, V
DS
= 0V to 400V
ns
IRFP17N50L
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I D
, Drain-to-Source Current (A)
5.0V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
, Drain-to-Source Current (A)
5.0V
20s PULSE WIDTH
Tj = 150C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1
1
10
100
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 150 C
J
T = 25 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
16A
IRFP17N50L
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
30
60
90
120
150
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
16A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
0.1
1
10
100
0.2
0.6
0.9
1.3
1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
T = 25 C
J
0.1
1
10
100
1000
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRFP17N50L
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5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0
4
8
12
16
20
T , Case Temperature ( C)
I , Drain Current (A)
C
D
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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