IRFP22N60K
8/26/04
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1
PD - 94414A
SMPS MOSFET
HEXFET
Power MOSFET
l
Hard Switching Primary or PFS Switch
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Motor Drive
Benefits
Applications
l
Low Gate Charge Qg results in Simple Drive Requirement
l
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l
Fully Characterized Capacitance and Avalanche Voltage and
Current
l
Enhanced Body Diode dv/dt Capability
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
22
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
14
A
I
DM
Pulsed Drain Current
88
P
D
@T
C
= 25C
Power Dissipation
370
W
Linear Derating Factor
2.9
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
18
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300
(1.6mm from case )
C
Absolute Maximum Ratings
Avalanche Characteristics
Symbol
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
380
mJ
I
AR
Avalanche Current
22
A
E
AR
Repetitive Avalanche Energy
37
mJ
Symbol
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.34
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
C/W
R
JA
Junction-to-Ambient
40
Thermal Resistance
V
DSS
R
DS(on)
typ.
I
D
600V
240m
22A
TO-247AC
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2
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Symbol
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
600
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.30
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
240
280
m
V
GS
= 10V, I
D
= 13A
V
GS(th)
Gate Threshold Voltage
3.0
5.0
V
V
DS
= V
GS
, I
D
= 250A
50
A
V
DS
= 600V, V
GS
= 0V
250
A
V
DS
= 480V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
V
GS
= -30V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
11
S
V
DS
= 50V, I
D
= 13A
Q
g
Total Gate Charge
150
I
D
= 22A
Q
gs
Gate-to-Source Charge
45
nC
V
DS
= 480V
Q
gd
Gate-to-Drain ("Miller") Charge
76
V
GS
= 10V
t
d(on)
Turn-On Delay Time
26
V
DD
= 300V
t
r
Rise Time
99
I
D
= 22A
t
d(off)
Turn-Off Delay Time
48
R
G
= 6.2
t
f
Fall Time
37
V
GS
= 10V
C
iss
Input Capacitance
3570
V
GS
= 0V
C
oss
Output Capacitance
350
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
36
pF
= 1.0MHz
C
oss
Output Capacitance
4710
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
92
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
180
V
GS
= 0V, V
DS
= 0V to 480V
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
Static @ T
J
= 25C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
22A, di/dt
540 A/s, V
DD
V
(BR)DSS
,
T
J
150C.
Notes:
Starting T
J
= 25C, L = 1.5mH, R
G
= 25
,
I
AS
= 22A
Pulse width
300s; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
S
D
G
Diode Characteristics
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
22
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
88
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.5
V
T
J
= 25C, I
S
= 22A, V
GS
= 0V
590
890
T
J
= 25C
I
F
= 22A
670 1010
T
J
= 125C
di/dt = 100A/s
7.2
11
T
J
= 25C
8.5
13
T
J
= 125C
I
RRM
Reverse Recovery Current
26
39
A
T
J
= 25C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
ns
C
nA
R
is measured at T
J
approximately 90C
IRFP22N60K
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60
-40
-20
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature
( C)
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
On
R
e
s
i
s
t
a
n
c
e
(
N
or
m
a
l
i
z
ed)
J
DS
(
o
n
)
V
=
I
=
GS
D
10V
22A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
20s PULSE WIDTH
Tj = 150C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate-to-Source Voltage (V)
0.01
0.10
1.00
10.00
100.00
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 150C
VDS = 50V
20s PULSE WIDTH
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.0V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
IRFP22N60K
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
40
80
120
160
QG Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 480V
VDS= 300V
VDS= 120V
ID= 22A
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 150C
VGS = 0V
1
10
100
1000
10000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 150C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100sec
IRFP22N60K
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5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
m
a
l
Res
pons
e
(
Z
)
1
th
JC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0
5
10
15
20
25
T , Case Temperature
( C)
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
C
D
IRFP22N60K
6
www.irf.com
25
50
75
100
125
150
0
200
400
600
800
Starting T , Junction Temperature
( C)
E
, S
i
ngl
e P
u
l
s
e A
v
al
anc
he E
ner
gy
(
m
J
)
J
AS
I D
TOP
BOTTOM
9.8A
14A
22A
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Fig 13a. Gate Charge Test Circuit
Fig 13b. Basic Gate Charge Waveform
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
Fig 12d. Unclamped Inductive Waveforms
Fig 12c. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R G
IAS
0.01
tp
D.U.T
L
VDS
+
-
VDD
DRIVER
A
15V
20V
IRFP22N60K
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7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET
Power MOSFETs
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
IRFP22N60K
8
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Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE:
AS S EMBLED ON WW 35, 2000
LOT CODE 5657
WIT H ASS EMBLY
T HIS IS AN IRFPE30
IN THE ASS EMBLY LINE "H"
035H
LOGO
INTERNAT IONAL
RECTIFIER
IRFPE 30
LOT CODE
ASS EMBLY
56 57
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H
Note: "P" in assembly line
position indicates "Lead-Free"
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