IRFP260N
HEXFET
Power MOSFET
10/11/00
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
50
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
35
A
I
DM
Pulsed Drain Current
200
P
D
@T
C
= 25C
Power Dissipation
300
W
Linear Derating Factor
2.0
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
560
mJ
I
AR
Avalanche Current
50
A
E
AR
Repetitive Avalanche Energy
30
mJ
dv/dt
Peak Diode Recovery dv/dt
10
V/ns
T
J
Operating Junction and
-55 to +175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 srew
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.50
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
C/W
R
JA
Junction-to-Ambient
40
Thermal Resistance
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1
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
V
DSS
= 200V
R
DS(on)
= 0.04
I
D
= 50A
S
D
G
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Ease of Paralleling
l
Simple Drive Requirements
TO-247AC
PD - 94004A
IRFP260N
2
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S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 28A, V
GS
= 0V
t
rr
Reverse Recovery Time
268
402
ns
T
J
= 25C, I
F
= 28A
Q
rr
Reverse Recovery Charge
1.9
2.8
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
50
200
A
Starting T
J
= 25C, L = 1.5mH
R
G
= 25
, I
AS
= 28A.
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
I
SD
28A, di/dt
486A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
400s; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
200
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.26
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.04
V
GS
= 10V, I
D
= 28A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
27
S
V
DS
= 50V, I
D
= 28A
25
A
V
DS
= 200V, V
GS
= 0V
250
V
DS
= 160V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
234
I
D
= 28A
Q
gs
Gate-to-Source Charge
38
nC
V
DS
= 160V
Q
gd
Gate-to-Drain ("Miller") Charge
110
V
GS
= 10V
t
d(on)
Turn-On Delay Time
17
V
DD
= 100V
t
r
Rise Time
60
I
D
= 28A
t
d(off)
Turn-Off Delay Time
55
R
G
= 1.8
t
f
Fall Time
48
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
4057
V
GS
= 0V
C
oss
Output Capacitance
603
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
161
= 1.0MHz
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
5.0
13
I
DSS
Drain-to-Source Leakage Current
IRFP260N
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3
0.1
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 175 C
J
T = 25 C
J
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
50A
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFP260N
4
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Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
7000
8000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
50
100
150
200
0
4
8
12
16
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
28A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
IRFP260N
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5
R
D
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
V
GS
R
G
D.U.T.
10V
+
-
25
50
75
100
125
150
175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
C
D
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
V
GS
R
G
D.U.T.
10V
V
DD
25
50
75
100
125
150
175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
C
D
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFP260N
6
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(B R )D S S
I
A S
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R G
I
A S
0 .0 1
tp
D .U .T
L
V D S
+
-
VD D
D R IV E R
A
1 5 V
2 0 V
25
50
75
100
125
150
175
0
500
1000
1500
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
11A
20A
28A
IRFP260N
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7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
IRFP260N
8
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Part Marking Information
TO-247AC
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
IN TE R N A TIO N A L
R E C T IF IE R
L O G O
A S S E M B L Y
L O T C O D E
E X A M P L E : TH IS IS A N IR F P E 3 0
W ITH A S S E M B L Y
L O T C O D E 3 A 1 Q
P A R T N U M B E R
D A TE C O D E
(Y YW W )
Y Y = Y E A R
W W W E E K
3A 1 Q 9 3 0 2
IR FP E 30
A
L E A D A S S IG N M E N T S
N O T E S :
- D -
5 .3 0 (.20 9 )
4 .7 0 (.18 5 )
2 .5 0 (.08 9)
1 .5 0 (.05 9)
4
3X
0 .80 (.03 1)
0 .40 (.01 6)
2.60 (.1 0 2)
2.20 (.0 8 7)
3 .4 0 (.1 33 )
3 .0 0 (.1 18 )
3 X
0 .2 5 (.0 10 ) M
C A S
4 .3 0 (.1 70 )
3 .7 0 (.1 45 )
- C -
2X
5.50 (.2 1 7)
4.50 (.1 7 7)
5 .50 (.21 7)
0.25 (.0 1 0)
1 .4 0 (.0 56 )
1 .0 0 (.0 39 )
3.65 (.1 43 )
3.55 (.1 40 )
D
M
M
B
- A -
1 5.90 (.6 2 6)
1 5.30 (.6 0 2)
- B -
1
2
3
2 0 .30 (.80 0)
1 9 .70 (.77 5)
1 4.8 0 (.5 83 )
1 4.2 0 (.5 59 )
2 .40 (.09 4)
2 .00 (.07 9)
2 X
2 X
5.45 (.2 1 5)
1 D IM E N S IO N IN G & T O LE R A N C IN G
P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 -A C .
1 - G A T E
2 - D R A IN
3 - S O U R C E
4 - D R A IN
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