5/18/01
www.irf.com
1
IRFP3703
SMPS MOSFET
HEXFET
Power MOSFET
l
Synchronous Rectification
Benefits
Applications
l
Low Gate Impedance to Reduce Switching
Losses
l
Fully Avalanche Rated
V
DSS
R
DS(on)
max
I
D
30V
0.0028
210A
Typical SMPS Topologies
l
Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
l
Offline High Power AC/DC Convertors using Synchronous Rectification
Absolute Maximum Ratings
Notes
through
are on page 8
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
210
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
100
A
I
DM
Pulsed Drain Current
1000
P
D
@T
C
= 25C
Power Dissipation
230
W
P
D
@T
A
= 25C
Power Dissipation
3.8
Linear Derating Factor
1.5
W/C
V
GS
Gate-to-Source Voltage
20
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 175
C
TO-247AC
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.65
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
C/W
R
JA
Junction-to-Ambient
40
Thermal Resistance
l
Ultra Low On-Resistance
l
Active ORing
PD - 93917A
IRFP3703
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.028 V/C Reference to 25C, I
D
= 1mA
2.3
2.8
V
GS
= 10V, I
D
= 76A
2.8
3.9
V
GS
= 7.0V, I
D
= 76A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
20
A
V
DS
= 24V, V
GS
= 0V
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -20V
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
150
S
V
DS
= 24V, I
D
= 76A
Q
g
Total Gate Charge
209
I
D
= 76A
Q
gs
Gate-to-Source Charge
62
nC
V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge
42
V
GS
= 10V,
t
d(on)
Turn-On Delay Time
18
V
DD
= 15V, V
GS
= 10V
t
r
Rise Time
123
I
D
= 76A
t
d(off)
Turn-Off Delay Time
53
R
G
= 1.8
t
f
Fall Time
24
V
GS
= 10V
C
iss
Input Capacitance
8250
V
GS
= 0V
C
oss
Output Capacitance
3000
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
290
pF
= 1.0MHz
C
oss
Output Capacitance
10360
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
3060
V
GS
= 0V, V
DS
= 24V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
2590
V
GS
= 0V, V
DS
= 0V to 24V
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
1700
mJ
I
AR
Avalanche Current
76
A
E
AR
Repetitive Avalanche Energy
23
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
0.8
1.3
V
T
J
= 25C, I
S
= 76A, V
GS
= 0V
t
rr
Reverse Recovery Time
80
120
ns
T
J
= 25C, I
F
= 76A, V
DS
= 16V
Q
r r
Reverse RecoveryCharge
185
275
nC
di/dt = 100A/s
Diode Characteristics
210
1000
A
Static @ T
J
= 25C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
m
IRFP3703
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
10000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
10000
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V = 15V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 175 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
260A
IRFP3703
4
www.irf.com
1
10
100
0
2000
4000
6000
8000
10000
12000
14000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
0.1
1
10
100
1000
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
10
100
1000
10000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0
40
80
120
160
200
240
280
320
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
76A
V
= 24V
DS
IRFP3703
www.irf.com
5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
50
100
150
200
250
T , Case Temperature
( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
PDF 
ZIP