IRFP460LC
HEXFET
Power MOSFET
PD - 9.1232
Revision 0
V
DSS
= 500V
R
DS(on)
= 0.27
I
D
= 20A
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
gs
Rating
Reduced C
iss
, C
oss
, C
rss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
20
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
12
A
I
DM
Pulsed Drain Current
80
P
D
@T
C
= 25C
Power Dissipation
280
W
Linear Derating Factor
2.2
W/C
V
GS
Gate-to-Source Voltage
30
V
E
AS
Single Pulse Avalanche Energy
960
mJ
I
AR
Avalanche Current
20
A
E
AR
Repetitive Avalanche Energy
28
mJ
dv/dt
Peak Diode Recovery dv/dt
3.5
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
0.45
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
C/W
R
JA
Junction-to-Ambient
40
Thermal Resistance
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
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IRFP460LC
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.8
V
T
J
= 25C, I
S
= 20A, V
GS
= 0V
t
rr
Reverse Recovery Time
570
860
ns
T
J
= 25C, I
F
= 20A
Q
rr
Reverse Recovery Charge
6.6
9.9
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25C, L = 4.3mH
R
G
= 25
, I
AS
= 20A. (See Figure 12)
I
SD
20A, di/dt
160A/s, V
DD
V
(BR)DSS
,
T
J
150C
Pulse width
300s; duty cycle
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
500
V
V
GS
= 0V, ID = 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.59
V/C
Reference to 25C, I
D
= 1mA
R
DS(ON)
Static Drain-to-Source On-Resistance
0.27
V
GS
= 10V, I
D
= 12A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
12
S
V
DS
= 50V, I
D
= 12A
25
V
DS
= 500V, V
GS
= 0V
250
V
DS
= 400V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
120
I
D
= 20A
Q
gs
Gate-to-Source Charge
32
nC
V
DS
= 400V
Q
gd
Gate-to-Drain ("Miller") Charge
49
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
18
V
DD
= 250V
t
r
Rise Time
77
I
D
= 20A
t
d(off)
Turn-Off Delay Time
40
R
G
= 4.3
t
f
Fall Time
43
R
D
= 12
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
3600
V
GS
= 0V
C
oss
Output Capacitance
440
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
39
= 1.0MHz, See Fig. 5
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
80
20
A
nH
L
D
Internal Drain Inductance
5.0
L
S
Internal Source Inductance
13
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
A
nA
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Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFP460LC
Fig 1. Typical Output Characteristics,
T
C
= 25
o
C
Fig 2. Typical Output Characteristics,
T
C
= 150
o
C
0 .0 1
0 .1
1
1 0
1 0 0
0 .0 1
0 .1
1
1 0
1 0 0
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
20s PULSE WIDTH
T = 25C
C
0 .0 1
0 .1
1
1 0
1 0 0
0 .0 1
0 .1
1
1 0
1 0 0
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
20s PULSE WIDTH
T = 150C
C
4.5V
0 .0
0 .5
1 .0
1 .5
2 .0
2 .5
3 .0
-6 0
-4 0
-2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
V = 10V
GS
J
T , Junction Temperature (C)
R
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
o
n
)
(
N
o
r
m
a
l
i
z
e
d
)
I = 20A
D
0 .0 1
0 .1
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 25 C
T = 15 0C
J
J
G S
V , G a te -to -S o u rc e V o lta g e (V )
D
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
V = 50 V
20 s P U LS E W ID T H
D S
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IRFP460LC
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
1 0 00
2 0 00
3 0 00
4 0 00
5 0 00
6 0 00
7 0 00
1
1 0
1 0 0
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
DS
V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
1 2
1 6
2 0
0
3 0
6 0
9 0
12 0
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE 13
V
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
G
S
I = 20A
V = 400V
V = 250V
V = 100V
DS
DS
DS
D
1
1 0
1 0 0
0
0 .4
0 .8
1 .2
1 .6
2
T = 25C
T = 150C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
SD
S
D
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
1 0 0 0
V , Drain-to-Source Voltage (V)
DS
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25C
T = 150C
Single Pulse
C
J
10s
100s
1ms
10ms
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IRFP460LC
Fig 10a. Switching Time Test Circuit
V
DS
10 V
Pulse Width
1
s
Duty Factor
0.1 %
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
4
8
1 2
1 6
2 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
T , Case Temperature (C)
C
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
D
0 .0 0 1
0 .0 1
0 .1
1
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
1 0
t , R ectangular P ulse D uration (sec )
1
t
h
J
C
D = 0 .5 0
0 .0 1
0 .0 2
0 .0 5
0 .1 0
0 .2 0
S IN G L E P UL S E
(T H E R M A L R E S P O N S E )
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t
2
1
t
DM
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
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