IRFPC50LC
HEXFET
Power MOSFET
PD - 9.1233
Revision 0
V
DSS
= 600V
R
DS(on)
= 0.60
I
D
= 11A
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
11
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
7.3
A
I
DM
Pulsed Drain Current
44
P
D
@T
C
= 25C
Power Dissipation
190
W
Linear Derating Factor
1.5
W/C
V
GS
Gate-to-Source Voltage
30
V
E
AS
Single Pulse Avalanche Energy
920
mJ
I
AR
Avalanche Current
11
A
E
AR
Repetitive Avalanche Energy
19
mJ
dv/dt
Peak Diode Recovery dv/dt
3.0
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Thermal Resistance
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
gs
Rating
Reduced C
iss
, C
oss
, C
rss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
Absolute Maximum Ratings
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
0.65
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
C/W
R
JA
Junction-to-Ambient
40
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IRFPC50LC
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.4
V
T
J
= 25C, I
S
= 11A, V
GS
= 0V
t
rr
Reverse Recovery Time
590
890
ns
T
J
= 25C, I
F
= 11A
Q
rr
Reverse Recovery Charge
4.5
6.8
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25C, L = 13mH
R
G
= 25
, I
AS
= 11A. (See Figure 12)
I
SD
11A, di/dt
100A/s, V
DD
V
(BR)DSS
,
T
J
150C
Pulse width
300s; duty cycle
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
600
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.59
V/C
Reference to 25C, I
D
= 1mA
R
DS(ON)
Static Drain-to-Source On-Resistance
0.60
V
GS
= 10V, I
D
= 6.6A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
7.0
S
V
DS
= 100V, I
D
= 6.6A
25
V
DS
= 600V, V
GS
= 0V
250
V
DS
= 480V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
84
I
D
= 11A
Q
gs
Gate-to-Source Charge
18
nC
V
DS
= 360V
Q
gd
Gate-to-Drain ("Miller") Charge
36
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
17
V
DD
= 300V
t
r
Rise Time
32
I
D
= 11A
t
d(off)
Turn-Off Delay Time
41
R
G
= 6.2
t
f
Fall Time
26
R
D
= 30
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
2300
V
GS
= 0V
C
oss
Output Capacitance
270
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
28
= 1.0MHz, See Fig. 5
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
44
11
A
nH
L
D
Internal Drain Inductance
5.0
L
S
Internal Source Inductance
13
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
A
nA
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Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFPC50LC
Fig 1. Typical Output Characteristics,
T
C
= 25
o
C
Fig 2. Typical Output Characteristics,
T
C
= 150
o
C
0 .0 1
0 .1
1
1 0
1 0 0
0 .0 1
0 .1
1
1 0
1 0 0
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20s PULSE WIDTH
T = 25C
C
A
4.5V
0 .0 1
0 .1
1
1 0
1 0 0
0 .0 1
0 .1
1
1 0
1 0 0
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20s PULSE WIDTH
T = 150C
C
A
4.5V
0.01
0.1
1
10
100
4
5
6
7
8
9
10
T = 25C
T = 150C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
A
V = 100V
20s PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20
0
20
40
60
80
100 120 140 160
J
T , Junction Temperature (C)
R
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
o
n
)
(
N
o
r
m
a
l
i
z
e
d
)
V = 10V
GS
A
I = 11A
D
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IRFPC50LC
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
1000
2000
3000
4000
1
10
100
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
20
40
60
80
Q , Total Gate Charge (nC)
G
V
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
G
S
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 11A
V = 360V
V = 240V
V = 120V
DS
DS
DS
D
0.1
1
10
100
0.0
0.3
0.6
0.9
1.2
1.5
T = 25C
T = 150C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
SD
S
D
A
0 .1
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
1 0 0 0
1 0 0 0 0
V , Drain-to-Source Voltage (V)
DS
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25C
T = 150C
Single Pulse
C
J
10s
100s
1ms
10ms
100ms
A
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IRFPC50LC
Fig 10a. Switching Time Test Circuit
V
DS
10 V
Pulse Width
1
s
Duty Factor
0.1 %
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
2
4
6
8
10
12
25
50
75
100
125
150
C
I
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
D
T , Case Temperature (C)
A
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
t
h
J
C
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t
2
1
t
D M
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
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