IRFPS3810
HEXFET
Power MOSFET
The HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
a wide variety of applications.
S
D
G
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
170
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
120
A
I
DM
Pulsed Drain Current
670
P
D
@T
C
= 25C
Power Dissipation
580
W
Linear Derating Factor
3.8
W/C
V
GS
Gate-to-Source Voltage
30
V
E
AS
Single Pulse Avalanche Energy
1350
mJ
I
AR
Avalanche Current
100
A
E
AR
Repetitive Avalanche Energy
58
mJ
dv/dt
Peak Diode Recovery dv/dt
2.3
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.26
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
C/W
R
JA
Junction-to-Ambient
40
Thermal Resistance
V
DSS
= 100V
R
DS(on)
= 0.009
I
D
= 170A
Description
1/21/02
www.irf.com
1
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Super-247TM
PD - 93912A
IRFPS3810
2
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APPROVED
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.11
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.009
V
GS
= 10V, I
D
= 100A
V
GS(th)
Gate Threshold Voltage
3.0
5.0
V
V
DS
= 10V, I
D
= 250A
g
fs
Forward Transconductance
52
S
V
DS
= 50V, I
D
= 100A
25
A
V
DS
= 100V, V
GS
= 0V
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
Q
g
Total Gate Charge
260
390
I
D
= 100A
Q
gs
Gate-to-Source Charge
49
74
nC
V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge
160
250
V
GS
= 10V
t
d(on)
Turn-On Delay Time
24
V
DD
= 50V
t
r
Rise Time
270
I
D
= 100A
t
d(off)
Turn-Off Delay Time
45
R
G
= 1.03
t
f
Fall Time
140
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
6790
V
GS
= 0V
C
oss
Output Capacitance
2470
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
990
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
10740
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
1180
V
GS
= 0V, V
DS
= 80V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
2210
V
GS
= 0V, V
DS
= 0V to 80V
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
5.0
13
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
SD
100A, di/dt
350A/s, V
DD
V
(BR)DSS
,
T
J
175C
Notes:
Starting T
J
= 25C, L = 0.27mH
R
G
= 25
, I
AS
= 100A. (See Figure 12)
Pulse width
400s; duty cycle
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 100A, V
GS
= 0V
t
rr
Reverse Recovery Time
220
330
ns
T
J
= 25C, I
F
= 100A
Q
rr
Reverse RecoveryCharge
1640 2460
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
170
670
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.
IRFPS3810
www.irf.com
3
APPROVED
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
1000
0.1
1
10
100
50s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V , Drain-to-Source Voltage (V)
I , D
r
ain-to-Source C
u
rrent (A)
DS
D
5.0V
1
10
100
1000
0.1
1
10
100
50s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
1
10
100
1000
5
6
7
8
9
10
11
12
13
V = 50V
50s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , D
r
ain-to-Source C
u
rrent (A)
GS
D
T = 25 C
J
T = 175 C
J
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
D
S
(
on)
V
=
I =
GS
D
10V
170A
IRFPS3810
4
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APPROVED
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
100
200
300
400
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Vol
t
age (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
100A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
1
10
100
VDS, Drain-to-Source Voltage (V)
0
5000
10000
15000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
10
100
1000
0.2
0.8
1.4
2.0
2.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
IRFPS3810
www.irf.com
5
APPROVED
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
a
l
R
e
sponse
(Z
)
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
40
80
120
160
200
T , Case Temperature
( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
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