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IRFR/U4105
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.045
I
D
= 27A
Description
5/11/98
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
27
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
19
A
I
DM
Pulsed Drain Current
100
P
D
@T
C
= 25C
Power Dissipation
68
W
Linear Derating Factor
0.45
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
65
mJ
I
AR
Avalanche Current
16
A
E
AR
Repetitive Avalanche Energy
6.8
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
2.2
R
JA
Junction-to-Ambient (PCB mount) **
50
C/W
R
JA
Junction-to-Ambient
110
Thermal Resistance
D -P A K
T O -252 A A
I-P A K
T O -25 1A A
l
Ultra Low On-Resistance
l
Surface Mount (IRFR4105)
l
Straight Lead (IRFU4105)
l
Fast Switching
l
Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91302C
www.irf.com
1
IRFR/U4105
2
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Parameter
Min.
Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.052
V/C
Reference to 25C, I
D
= 1mA
0.045
V
GS
= 10V, I
D
= 16A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
6.5
S
V
DS
= 25V, I
D
= 16A
25
A
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
34
I
D
= 16A
Q
gs
Gate-to-Source Charge
6.8
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
14
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.0
V
DD
= 28V
t
r
Rise Time
49
ns
I
D
= 16A
t
d(off)
Turn-Off Delay Time
31
R
G
= 18
t
f
Fall Time
40
R
D
= 1.8
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
700
V
GS
= 0V
C
oss
Output Capacitance
240
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
100
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
7.5
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
4.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.6
V
T
J
= 25C, I
S
= 16A, V
GS
= 0V
t
rr
Reverse Recovery Time
57
86
ns
T
J
= 25C, I
F
= 16A
Q
rr
Reverse RecoveryCharge
130
200
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
27
100
Notes:
V
DD
= 25V, starting T
J
= 25C, L = 410H
R
G
= 25
, I
AS
= 16A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
I
SD
16A, di/dt
420A/s, V
DD
V
(BR)DSS
,
T
J
175C
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
Uses IRFZ34N data and test conditions
Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
Pulse width
300s; duty cycle
2%
IRFR/U4105
www.irf.com
3
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
tion
0.1
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
1 0 0
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t (
A
)
D
V , D rain-to-S ou rce V o ltage (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2 0 s P U L S E W ID T H
T = 25 C
C
A
4.5 V
0.1
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
1 0 0
I
,
D
r
ai
n
-
t
o
-
S
ou
r
c
e Cur
r
e
nt
(
A
)
D
V , D rain-to-S ource V oltage (V )
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
A
4.5 V
20 s P U LS E W ID TH
T = 1 75 C
C
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 2 5 C
J
G S
V , G ate-to-S o urce V o ltag e (V )
D
I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
A
V = 2 5 V
2 0 s P U LS E W ID TH
T = 1 7 5C
J
D S
0 . 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
2 . 4
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Junction T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
ta
n
c
e
D
S
(
on)
(
Nor
m
a
l
i
z
e
d
)
V = 1 0V
G S
A
I = 2 6A
D
IRFR/U4105
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to-S ourc e V oltage (V )
A
V = 0 V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o s s d s g d
C
is s
C
o s s
C
rs s
0
4
8
1 2
1 6
2 0
0
1 0
2 0
3 0
4 0
Q , T otal G ate C h arge (n C )
G
V
,
G
a
t
e
-
t
o
-
So
u
r
ce
Vo
l
t
a
g
e
(
V
)
GS
A
F O R T E S T C IR C U IT
S E E F IG U R E 1 3
V = 4 4 V
V = 2 8 V
D S
D S
I = 16 A
D
1
1 0
1 0 0
1 0 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
T = 25 C
J
V = 0V
G S
V , S o urc e-to-D rain V o ltage (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 17 5C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
V , D rain-to-S ource V oltage (V )
D S
I
,
Dr
ai
n
C
u
r
r
e
nt
(
A
)
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D
D S (o n)
1 0 s
1 0 0 s
1 m s
A
T = 25 C
T = 17 5C
S ing le P u ls e
C
J
IRFR/U4105
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5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
5
10
15
20
25
30
T , Case Temperature ( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
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