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02/26/002
IRFR430A
IRFU430A
SMPS MOSFET
HEXFET
Power MOSFET
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High speed power switching
Benefits
Applications
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective C
OSS
specified (See AN 1001)
V
DSS
R
DS
(on) max
I
D
500V
1.7
5.0A
Absolute Maximum Ratings
PD - 94356A
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
130
mJ
I
AR
Avalanche Current
5.0
A
E
AR
Repetitive Avalanche Energy
11
mJ
Avalanche Characteristics
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.1
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
D-Pak
IRFR430A
I-Pak
IRFU430A
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
5.0
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
3.2
A
I
DM
Pulsed Drain Current
20
P
D
@T
C
= 25C
Power Dissipation
110
W
Linear Derating Factor
0.91
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
3.0
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
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Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
2.3
S
V
DS
= 50V, I
D
= 3.0A
Q
g
Total Gate Charge
24 I
D
= 5.0A
Q
gs
Gate-to-Source Charge
6.5
nC
V
DS
= 400V
Q
gd
Gate-to-Drain ("Miller") Charge
13
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
8.7
V
DD
= 250V
t
r
Rise Time
27
I
D
= 5.0A
t
d(off)
Turn-Off Delay Time
17
R
G
= 15
t
f
Fall Time
16
R
D
= 50
,See Fig. 10
C
iss
Input Capacitance
490
V
GS
= 0V
C
oss
Output Capacitance
75
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
4.5
pF
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
750
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
25
V
GS
= 0V, V
DS
= 400V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
51
V
GS
= 0V, V
DS
= 0V to 400V
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.5
V
T
J
= 25C, I
S
= 5.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
410
620
ns
T
J
= 25C, I
F
= 5.0A
Q
rr
Reverse RecoveryCharge
1.4
2.1
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
5.0
20
A
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
500
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.60 V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
1.7
V
GS
= 10V, I
D
= 3.0A
V
GS(th)
Gate Threshold Voltage
2.0
4.5
V
V
DS
= V
GS
, I
D
= 250A
25
A
V
DS
= 500V, V
GS
= 0V
250
V
DS
= 400V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
5.0A, di/dt
320A/s, V
DD
V
(BR)DSS
,
T
J
150C.
Notes:
Starting T
J
= 25C, L = 11mH
R
G
= 25
, I
AS
= 5.0A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
I D
, Drain-to-Source Current (A)
4.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I D
, Drain-to-Source Current (A)
4.5V
20s PULSE WIDTH
Tj = 150C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.0
6.0
8.0
10.0
12.0
14.0
16.0
VGS, Gate-to-Source Voltage (V)
0.01
0.10
1.00
10.00
100.00
I D
, Drain-to-Source Current
(
)
TJ = 25C
TJ = 150C
VDS = 100V
20s PULSE WIDTH
-60
-40
-20
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature
( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I
=
GS
D
10V
5.0A
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
4
8
12
16
20
0
2
5
7
10
12
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I
=
D
5.0A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
0.1
1
10
100
0.2
0.5
0.8
1.1
1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
T = 25 C
J
10
100
1000
10000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
I D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 150C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100sec
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Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
0.0
1.1
2.2
3.3
4.4
5.5
T , Case Temperature
( C)
I , Drain Current (A)
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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