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Product Summary

Part Number

DSS

DS(on)

IRFY9240CM

-200V

0.51

-9.4A

Provisional Data Sheet No. PD 9.1295A

HEXFET

POWER MOSFET

International Rectifier's HEXFET technology is the key to
its advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state resis-
tance combined with high transconductance.

HEXFET power MOSFETs also feature all of the well-
established advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, high en-
ergy pulse circuits, and virtually any application where
high reliability is required.

The HEXFET power MOSFET's totally isolated package
eliminates the need for additional isolating material between
the device and the heatsink. This improves ther mal effi-
ciency and reduces drain capacitance.

IRFY9240CM

Features

Hermetically Sealed

Electrically Isolated

Simple Drive Requirements

Ease of Paralleling

P-CHANNEL

-200 Volt, 0.51

HEXFET

Absolute Maximum Ratings

Parameter

IRFY9240CM

Units

ID @ VGS= -10V, TC = 25°C

Continuous Drain Current

-9.4

ID @ VGS= -10V, TC = 100°C

Continuous Drain Current

-6.0

IDM

Pulsed Drain Current

-36

PD @ TC = 25°C

Max. Power Dissipation

100

Linear Derating Factor

0.8

W/K

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalance Energy

700

m J

IAR

Avalance Current

-9.4

EAR

Repetitive Avalanche Energy

m J

dv/dt

Peak Diode Recovery dv/dt

-5.5

V/ns

T J

Operating Junction

-55 to 150

Tstg

Storage Temperature Range

°C

Lead Temperature

300 (0.063 in (1.6mm) from case for 10 sec)

Weight

4.3(typical)

* I

current limited by pin diameter

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Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-200

VGS = 0V, ID = -1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

-0.20

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source

0.51

VGS = -10V, ID = -6.0A

On-State Resistance

0.52

VGS = -10V, ID = -9.4A

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VDS = VGS, ID = -250

gfs

Forward Transconductance

4.0

S (

) VDS

-15V, IDS = -6.0A

IDSS

Zero Gate Voltage Drain Current

-25

VDS

= 0.8 x max. rating,VGS = 0V

-250

VDS = 0.8 x max. rating
VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

100

VGS = 20V

Q g

Total Gate Charge

VGS = -10V, ID = -9.4A

Qgs

Gate-to-Source Charge

3.0

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain (`Miller') Charge

4.5

see figures 6 and 13

td(on)

Turn-On Delay Time

VDD = -100V, ID = -9.4A

Rise Time

RG = 9.1

VGS = -10V

td(off)

Turn-Off Delay Time

Fall Time

see figure 10

Internal Drain Inductance

8.7

Internal Source Inductance

8.7

Ciss

Input Capacitance

1200

VGS = 0v, VDS = -25V

Coss

Output Capacitance

570

f = 1.0MHz.

Crss

Reverse Transfer Capacitance

see figure 5

Thermal Resistance

Parameter

Min Typ

Max Units

Test Conditions

RthJC Junction-to-Case

1.25

RthJA Junction-to-Ambient

K/W

Typical socket mount

RthCS Case-to-Sink

0.21

Mounting surface flat, smooth

µA

Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.

Measured from the

source lead, 6mm (0.25
in.) from package to
source bonding pad.

Modified MOSFET symbol
showing the internal

inductances.

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

-9.4

ISM

Pulse Source Current (Body Diode)

-36

VSD

Diode Forward Voltage

-4.6

= 25°C, IS = -9.4A, VGS = 0V

trr

Reverse Recovery Time

440

Tj = 25°C, IF = -9.4A, di/dt

-100 A/µs

QRR

Reverse Recovery Charge

7.2

µC

VDD

-50 V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

IRFY9240CM Device

Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.

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Fig. 10a -- Switching Time Test Circuit

Fig. 10b -- Switching Time Waveforms

Fig. 9 -- Maximum Drain Current vs. Case Tempera-

ture

Fig. 7 -- Typical Source-to-Drain Diode Forward

Voltage

Fig. 8 -- Maximum Safe Operating Area

IRFY9240CM Device

1 0

1 0 0

1 0

1 0 0

1 0 0 0

O P E R AT IO N I N T H IS A R E A L IM I T E D
B Y R

D S (o n )

T = 2 5 ° C
T = 1 5 0 °C
S ing le P uls e

1 0 ms

-I

r
a

i
n

t

(A

)

-V , D ra in -to -S o u rc e V o lta g e ( V )

D S

10 0 µ s

1 m s

1 0

2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

T , C as e Te m p er a tu r e ( °C )

Negativ

e I

, Drain Current (Amps)

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0 . 0 1

0 . 1

1 0

0 . 0 0 0 0 1

0 . 0 0 0 1

0 . 0 0 1

0 . 0 1

0 . 1

t , R e ctang ula r P u ls e D u ratio n (sec )

D = 0 . 50

0 .0 1

0 .0 2

0 .0 5

0 .1 0

0 .2 0

S I N G L E P U L S E
( T H E R M A L R E S P O N S E )

r
m

l
R

pons

(
Z

)

Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12c -- Max. Avalanche Energy vs. Current

Fig. 12a -- Unclamped Inductive Test Circuit

Fig. 12b -- Unclamped Inductive Waveforms

Fig. 13a -- Gate Charge Test Circuit

IRFY9240CM Device

2 0 0

4 0 0

6 0 0

8 0 0

2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

i
ngl

l
s

e A

(

)

S ta rtin g T , J un c tion Te m p e ra tur e ( °C )

V = -50 V

I = -1 1A

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