HEXFET
Power MOSFET
IRFZ24N
Fifth Generation
HEXFET
power MOSFETs
from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
9/13/99
V
DSS
= 55V
R
DS(on)
= 0.07
I
D
= 17A
S
D
G
TO-220AB
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
3.3
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
17
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
12
A
I
DM
Pulsed Drain Current
68
P
D
@T
C
= 25C
Power Dissipation
45
W
Linear Derating Factor
0.30
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
71
mJ
I
AR
Avalanche Current
10
A
E
AR
Repetitive Avalanche Energy
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Absolute Maximum Ratings
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.052
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.07
V
GS
= 10V, I
D
= 10A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
4.5
S
V
DS
= 25V, I
D
= 10A
25
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
20
I
D
= 10A
Q
gs
Gate-to-Source Charge
5.3
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
7.6
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
4.9
V
DD
= 28V
t
r
Rise Time
34
I
D
= 10A
t
d(off)
Turn-Off Delay Time
19
R
G
= 24
t
f
Fall Time
27
R
D
= 2.6
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
370
V
GS
= 0V
C
oss
Output Capacitance
140
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
65
= 1.0MHz, See Fig. 5
nH
A
nA
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance
ns
S
D
G
4.5
7.5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
10A, di/dt
280A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
300s; duty cycle
2%.
V
DD
= 25V, starting T
J
= 25C, L = 1.0mH
R
G
= 25
, I
AS
= 10A. (See Figure 12)
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 10A, V
GS
= 0V
t
rr
Reverse Recovery Time
56
83
ns
T
J
= 25C, I
F
= 10A
Q
rr
Reverse RecoveryCharge
120
180
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
A
68
17
S
D
G
IRFZ24N
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Fig 1. Typical Output Characteristics,
T
J
= 25
o
C
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics,
T
J
= 175
o
C
1
1 0
1 0 0
0.1
1
1 0
1 0 0
I
,
D
r
ain-
t
o
-
S
ou
r
c
e C
u
r
r
e
nt
(
A
)
D
V , D ra in -to -S o urc e V o lta g e (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20 s P U LS E W ID TH
T = 2 5C
C
A
4.5V
1
1 0
1 0 0
0.1
1
1 0
1 0 0
4 .5V
I
,
D
r
ain-
t
o
-
S
ou
r
c
e C
u
r
r
e
nt
(
A
)
D
V , D ra in-to-S o u rce V o lta ge (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2 0 s P U L S E W ID T H
T = 17 5C
C
A
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 2 5 C
J
G S
V , G ate-to -S o urce V oltag e (V )
D
I
,
D
r
a
i
n
-
t
o
-
S
o
u
rc
e
C
u
rre
n
t
(A
)
T = 1 7 5 C
J
A
V = 2 5V
2 0 s P U L S E W ID TH
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Junction T em perature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
ta
n
c
e
D
S
(
on)
(N
o
r
m
a
l
i
z
e
d
)
V = 10 V
G S
A
I = 1 7A
D
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Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to -S o urc e V oltage (V )
A
V = 0V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
iss
C
os s
C
rs s
0
4
8
1 2
1 6
2 0
0
4
8
1 2
1 6
2 0
Q , T otal G ate C harge (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
F O R TE S T C IR C U IT
S E E F IG U R E 1 3
V = 44 V
V = 28 V
I = 10 A
D S
D S
D
1
1 0
1 0 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
1 . 6
1 . 8
2 . 0
T = 25 C
J
V = 0V
G S
V , S o urc e-to-D rain V oltage (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 1 75 C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
V , D rain-to-S ource V oltage (V )
D S
I
,
Dr
ai
n
C
u
r
r
e
nt
(
A
)
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D
D S (o n)
1 0 s
1 0 0 s
1 m s
1 0 m s
A
T = 25 C
T = 17 5C
S ing le P u ls e
C
J
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5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
Fig 10b. Switching Time Waveforms
R
D
V
GS
R
G
D.U.T.
10V
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
+
-
V
DD
0
4
8
1 2
1 6
2 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
C
I , D
r
a
i
n
C
u
r
r
e
n
t
(
A
m
p
s
)
D
T , C a se T em peratu re (C )
A
0 . 0 1
0.1
1
1 0
0 . 0 0 0 0 1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0.1
1
t , R e c ta n g u la r P u ls e D u ratio n (s e c )
1
th
J
C
D = 0 .5 0
0 .0 1
0 .0 2
0 .0 5
0 .1 0
0 .2 0
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
A
Th
e
r
m
a
l
R
e
s
ponse (
Z
)
P
t
2
1
t
D M
N o te s :
1 . D u ty f ac to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
t h J C
C
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