IRFZ34NS/L
HEXFET
Power MOSFET
PD - 9.1311A
l
Advanced Process Technology
l
Surface Mount (IRFZ34NS)
l
Low-profile through-hole (IRFZ34NL)
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for low-
profile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.040
I
D
= 29A
2
D P a k
T O - 2 6 2
S
D
G
8/25/97
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
2.2
R
JA
Junction-to-Ambient (PCB mount) **
40
C/W
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
29
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
20
A
I
DM
Pulsed Drain Current
100
P
D
@T
A
= 25C
Power Dissipation
3.8
W
P
D
@T
C
= 25C
Power Dissipation
68
W
Linear Derating Factor
0.45
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
130
mJ
I
AR
Avalanche Current
16
A
E
AR
Repetitive Avalanche Energy
5.6
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
IRFZ34NS/L
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.052
V/C
Reference to 25C, I
D
= 1mA
R
DS(ON)
Static Drain-to-Source On-Resistance
0.040
V
GS
= 10V, I
D
= 16A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
6.5
S
V
DS
= 25V, I
D
= 16A
25
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= -20V
Q
g
Total Gate Charge
34
I
D
= 16A
Q
gs
Gate-to-Source Charge
6.8
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
14
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
7.0
V
DD
= 28V
t
r
Rise Time
49
I
D
= 16A
t
d(off)
Turn-Off Delay Time
31
R
G
= 18
t
f
Fall Time
40
R
D
= 1.8
,
See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance
700
V
GS
= 0V
C
oss
Output Capacitance
240
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
100
= 1.0MHz, See Fig. 5
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
A
nA
nH
L
S
Internal Source Inductance
7.5
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
16 A, di/dt
420A/s, V
DD
V
(BR)DSS
,
T
J
175C
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.6
V
T
J
= 25C, I
S
= 16A, V
GS
= 0V
t
rr
Reverse Recovery Time
57
86
ns
T
J
= 25C, I
F
= 16A
Q
rr
Reverse RecoveryCharge
130
200
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
100
29
A
S
D
G
V
DD
= 25V, starting T
J
= 25C, L = 610H
R
G
= 25
, I
AS
= 16A. (See Figure 12)
Pulse width
300s; duty cycle
2%.
Uses IRFZ34N data and test conditions
IRFZ34NS/L
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
10
100
1000
0.1
1
10
100
I
,
D
r
a
i
n-
t
o
-
S
ou
r
c
e
C
u
r
r
ent
(
A
)
D
V , D ra in-to-S ou rce V o lta ge (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
2 0 s PU LSE W ID TH
T = 2 5C
C
A
4 .5V
1
10
100
1000
0.1
1
10
100
I
,
D
r
a
i
n-
t
o
-
S
ou
r
c
e
C
u
r
r
ent
(
A
)
D
V , Dra in -to-So urce V oltag e (V)
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
A
4 .5V
20 s PU L SE W ID TH
T = 175 C
C
1
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 2 5 C
J
G S
V , G a te -t o -S o u rce V olt a ge (V )
D
I
,
D
r
ai
n-
t
o
-
S
our
c
e
C
u
r
r
e
nt
(
A
)
A
V = 2 5V
2 0 s P U LS E W ID T H
T = 1 7 5 C
J
DS
0 . 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
2 . 4
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , Ju nction T em pe rature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
o
r
m
a
liz
e
d
)
V = 1 0V
G S
A
I = 2 6A
D
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
T
J
= 25C
T
J
= 175C
IRFZ34NS/L
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
200
400
600
800
1000
1200
1
10
100
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , Drai n-to -So urce V oltag e (V)
A
V = 0V, f = 1 MH z
C = C + C , C SH O R TED
C = C
C = C + C
G S
iss gs gd ds
rss gd
oss ds gd
C
is s
C
o s s
C
rs s
0
4
8
12
16
20
0
10
20
30
40
Q , To tal Ga te Ch arg e (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
FO R TES T C IR CU I T
SEE FIG U R E 13
V = 4 4V
V = 2 8V
DS
DS
I = 1 6A
D
1
1 0
1 0 0
1 0 0 0
0 . 4
0 . 8
1 . 2
1 . 6
2 . 0
T = 25 C
J
V = 0 V
G S
V , S o urce-to -Drain Vo lta ge (V )
I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 175 C
J
1
10
100
1000
1
10
100
V , Dra in -to-So urce Vo ltag e (V)
D S
I ,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
OPE R ATIO N IN TH IS A RE A LI MI TE D
BY R
D
D S(o n)
10 s
100 s
1m s
10m s
A
T = 25 C
T = 17 5C
S ing le Pulse
C
J
IRFZ34NS/L
Fig 10a. Switching Time Test Circuit
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
10 V
Pulse Width
1
s
Duty Factor
0.1 %
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
25
50
75
100
125
150
175
0
5
10
15
20
25
30
T , Case Temperature
( C)
I , Drain Current (A)
C
D
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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