IRFZ44NS
IRFZ44NL
HEXFET
Power MOSFET
l
Advanced Process Technology
l
Surface Mount (IRFZ44NS)
l
Low-profile through-hole (IRFZ44NL)
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for low-
profile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.0175
I
D
= 49A
2
D P ak
T O -26 2
S
D
G
03/13/01
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.5
R
JA
Junction-to-Ambient
40
C/W
Thermal Resistance
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
49
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
35
A
I
DM
Pulsed Drain Current
160
P
D
@T
A
= 25C
Power Dissipation
3.8
W
P
D
@T
C
= 25C
Power Dissipation
94
W
Linear Derating Factor
0.63
W/C
V
GS
Gate-to-Source Voltage
20
V
I
AR
Avalanche Current
25
A
E
AR
Repetitive Avalanche Energy
9.4
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
www.irf.com
1
PD - 94153
IRFZ44NS/IRFZ44NL
2
www.irf.com
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 25A, V
GS
= 0V
t
rr
Reverse Recovery Time
63
95
ns
T
J
= 25C, I
F
= 25A
Q
r r
Reverse Recovery Charge
170
260
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
49
160
A
Starting T
J
= 25C, L = 0.48mH
R
G
= 25
, I
AS
= 25A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
I
SD
25A, di/dt
230A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
400s; duty cycle
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175C .
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.058
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
17.5
m
V
GS
= 10V, I
D
= 25A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
19
S
V
DS
= 25V, I
D
= 25A
25
A
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
63
I
D
= 25A
Q
gs
Gate-to-Source Charge
14
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
23
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
12
V
DD
= 28V
t
r
Rise Time
60
I
D
= 25A
t
d(off)
Turn-Off Delay Time
44
R
G
= 12
t
f
Fall Time
45
V
GS
= 10V, See Fig. 10
L
S
Internal Source Inductance
7.5
nH
Between lead,
and center of die contact
C
iss
Input Capacitance
1470
V
GS
= 0V
C
oss
Output Capacitance
360
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
88
pF
= 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy
530
150
mJ
I
AS
= 25A, L = 0.47mH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
IRFZ44NS/IRFZ44NL
www.irf.com
3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
1 0 0
I
,
D
r
ai
n-
t
o
-
S
ou
r
c
e C
u
r
r
e
nt
(
A
)
D
V , D ra in-to-S o u rce V o lta ge (V )
D S
VGS
TO P 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BO TTOM 4.5V
2 0 s P U L S E W ID T H
T = 25 C
C
A
4 .5 V
1
1 0
1 0 0
1 0 0 0
0.1
1
1 0
1 0 0
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t (
A
)
D
V , D rain-to-S ource V oltage (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
A
4.5V
20 s P U LS E W ID T H
T = 1 75 C
C
1
1 0
1 0 0
1 0 0 0
4
5
6
7
8
9
1 0
T = 2 5 C
J
G S
V , G a te-to-S ource V o ltag e (V )
D
I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
A
V = 2 5 V
2 0 s P U LS E W ID TH
D S
T = 1 7 5 C
J
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
J
T , J unc tion T em perature (C )
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed
)
V = 10 V
G S
A
I = 4 1 A
D
T
J
= 25C
T
J
= 175C
Fig 2. Typical Output Characteristics
IRFZ44NS/IRFZ44NL
4
www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
2 5 0 0
1
1 0
1 0 0
C
,
C
a
pa
c
i
t
a
n
c
e (
p
F
)
D S
V , D rain-to-S ourc e V oltage (V )
A
V = 0V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
iss
C
os s
C
rs s
0
4
8
1 2
1 6
2 0
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
Q , T otal G ate C harge (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
F O R TE S T C IR C U IT
S E E F IG U R E 1 3
V = 44 V
V = 28 V
D S
D S
I = 25 A
D
1
1 0
1 0 0
1 0 0 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
T = 25 C
J
V = 0V
G S
V , S o u rce -to -D rain V o lta g e (V )
I , R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
T = 1 75 C
J
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
V , D rain-to-S ource V oltage (V )
D S
I
, D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D
D S (o n)
1 0 s
1 0 0 s
1 m s
1 0 m s
A
T = 25 C
T = 17 5C
S ing le P u ls e
C
J
IRFZ44NS/IRFZ44NL
www.irf.com
5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
10
20
30
40
50
T , Case Temperature
( C)
I , Drain Current (A)
C
D
PDF 
ZIP