IRFZ48R
HEXFET
Power MOSFET
8/24/00
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
50*
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
50*
A
I
DM
Pulsed Drain Current
290
P
D
@T
C
= 25C
Power Dissipation
190
W
Linear Derating Factor
1.3
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
100
mJ
I
AR
Avalanche Current
50
A
E
AR
Repetitive Avalanche Energy
19
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Mounting torque, 6-32 or M3 srew
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.8
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
Thermal Resistance
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1
V
DSS
= 60V
R
DS(on)
= 0.018
I
D
= 50*A
S
D
G
TO-220AB
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Drop in Replacement of the IRFZ48
for Linear/Audio Applications
Description
PD - 93958
IRFZ48R
2
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S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
2.0
V
T
J
= 25C, I
S
= 72A, V
GS
= 0V
t
rr
Reverse Recovery Time
120
180
ns
T
J
= 25C, I
F
= 72A
Q
rr
Reverse Recovery Charge
0.50 0.80
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
50*
290
A
V
DD
= 25V, Starting T
J
= 25C, L = 22H
R
G
= 25
, I
AS
= 72A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
72A, di/dt
200A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
300s; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
60
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.060
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.018
V
GS
= 10V, I
D
= 43A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
27
S
V
DS
= 25V, I
D
= 43A
25
A
V
DS
= 60V, V
GS
= 0V
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
110
I
D
= 72A
Q
gs
Gate-to-Source Charge
29
nC
V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge
36
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
8.1
V
DD
= 30V
t
r
Rise Time
250
I
D
= 72A
t
d(off)
Turn-Off Delay Time
210
R
G
= 9.1
t
f
Fall Time
250
R
D
= 0.34
, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
2400
V
GS
= 0V
C
oss
Output Capacitance
1300
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
190
pF
= 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
* Current limited by the package, (Die Current = 72A)
IRFZ48R
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
72A
IRFZ48R
4
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Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
1000
0.1
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRFZ48R
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5
R
D
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
V
GS
R
G
D.U.T.
10V
+
-
25
50
75
100
125
150
175
0
20
40
60
80
T , Case Temperature ( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
V
GS
R
G
D.U.T.
10V
V
DD
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFZ48R
6
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(B R )D S S
I
A S
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R G
I
A S
0 .0 1
tp
D .U .T
L
V D S
+
-
VD D
D R IV E R
A
1 5 V
20V
25
50
75
100
125
150
175
0
50
100
150
200
250
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
29A
51A
72A
IRFZ48R
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7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
IRFZ48R
8
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L E A D A S S IG N M E N T S
1 - G A T E
2 - D R A IN
3 - S O U R C E
4 - D R A IN
- B -
1 .3 2 (.05 2 )
1 .2 2 (.04 8 )
3 X
0.5 5 (.0 2 2)
0.4 6 (.0 1 8)
2 .9 2 (.11 5 )
2 .6 4 (.10 4 )
4 .6 9 (.1 8 5 )
4 .2 0 (.1 6 5 )
3X
0 .9 3 (.0 3 7 )
0 .6 9 (.0 2 7 )
4 .0 6 (.16 0 )
3 .5 5 (.14 0 )
1 .1 5 (.0 4 5)
M IN
6 .4 7 (.2 5 5 )
6 .1 0 (.2 4 0 )
3 .7 8 (.14 9 )
3 .5 4 (.13 9 )
- A -
1 0 .5 4 (.4 15 )
1 0 .2 9 (.4 05 )
2 .87 (.1 1 3 )
2 .62 (.1 0 3 )
1 5 .24 (.6 0 0 )
1 4 .84 (.5 8 4 )
1 4 .09 (.5 5 5 )
1 3 .47 (.5 3 0 )
3 X
1 .4 0 (.0 5 5 )
1 .1 5 (.0 4 5 )
2 .5 4 (.1 0 0)
2 X
0 .3 6 (.0 1 4 ) M B A M
4
1 2 3
N O T E S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 82 . 3 O U T L IN E C O N F O R M S TO J E D E C O U T L IN E T O -2 2 0 A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
P A R T N U M B E R
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
L O T C O D E 9 B 1 M
A S S E M B L Y
L O T C O D E
D A T E C O D E
(Y Y W W )
Y Y = Y E A R
W W = W E E K
9 2 4 6
IR F 1 0 1 0
9 B 1 M
A
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Data and specifications subject to change without notice. 8/00
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