IRFZ48NS
IRFZ48NL
HEXFET
Power MOSFET
l
Advanced Process Technology
l
Surface Mount (IRFZ48NS)
l
Low-profile through-hole (IRFZ48NL)
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Advanced HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRFZ48NL) is available for low-
profile applications.
Description
V
DSS
= 55V
R
DS(on)
= 0.014
I
D
= 64A
2
D P ak
T O -26 2
S
D
G
03/12/01
Parameter
Typ.
Max.
Units
R
qJC
Junction-to-Case
1.15
R
qJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
C/W
Absolute Maximum Ratings
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1
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
64
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
45
A
I
DM
Pulsed Drain Current
210
P
D
@T
A
= 25C
Power Dissipation
3.8
W
P
D
@T
C
= 25C
Power Dissipation
130
W
Linear Derating Factor
0.83
W/C
V
GS
Gate-to-Source Voltage
20
V
I
AR
Avalanche Current
32
A
E
AR
Repetitive Avalanche Energy
13
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
PD - 9.1408B
IRFZ48NS/IRFZ48NL
2
www.irf.com
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.058
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
14
m
V
GS
= 10V, I
D
= 32A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
24
S
V
DS
= 25V, I
D
= 32A
25
A
V
DS
= 55V, V
GS
= 0V
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
81
I
D
= 32A
Q
gs
Gate-to-Source Charge
19
nC
V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge
30
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
12
V
DD
= 28V
t
r
Rise Time
78
I
D
= 32A
t
d(off)
Turn-Off Delay Time
34
R
G
= 0.85
t
f
Fall Time
50
V
GS
= 10V, See Fig. 10
nH
Between lead,
and center of die contact
C
iss
Input Capacitance
1970
V
GS
= 0V
C
oss
Output Capacitance
470
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
120
pF
= 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy
700
190
mJ
I
AS
= 32A, L = 0.37mH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
S
Internal Source Inductance
7.5
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 32A, V
GS
= 0V
t
rr
Reverse Recovery Time
68
100
ns
T
J
= 25C, I
F
= 32A
Q
r r
Reverse Recovery Charge
220
330
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
64
210
A
Starting T
J
= 25C, L = 0.37mH
R
G
= 25
, I
AS
= 32A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
32A, di/dt
220A/s, V
DD
V
(BR)DSS
,
T
J
175C
Pulse width
400s; duty cycle
2%.
This is the destructive value not limited to the thermal limit.
This is the thermal limited value.
Notes:
IRFZ48NS/IRFZ48NL
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4
6
8
10
12
V = 25V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 175 C
J
-60 -40 -20
0
20
40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
64A
IRFZ48NS/IRFZ48NL
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
2500
3000
3500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
20
40
60
80
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
32A
V
= 11V
DS
V
= 27V
DS
V
= 44V
DS
0.1
1
10
100
1000
0.2
0.7
1.2
1.7
2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
1
10
100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100sec
IRFZ48NS/IRFZ48NL
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
T , Case Temperature
( C)
I , Drain Current (A)
C
D
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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