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IRG4BC15MD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
E
G
n-ch an nel
C
V
CES
= 600V
V
CE(on) typ.
= 1.88V
@V
GE
= 15V, I
C
= 8.6A
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
2.7
R
JC
Junction-to-Case - Diode
7.0
C/W
R
CS
Case-to-Sink, flat, greased surface
0.50
R
JA
Junction-to-Ambient, typical socket mount
80
Wt
Weight
2 (0.07)
g (oz)
Thermal Resistance
5/25/01
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
14
I
C
@ T
C
= 100C
Continuous Collector Current
8.6
I
CM
Pulsed Collector Current
28
A
I
LM
Clamped Inductive Load Current
28
I
F
@ T
C
= 100C
Diode Continuous Forward Current
4.0
t
sc
Short Circuit Withstand Time
12
s
I
FM
Diode Maximum Forward Current
16
A
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
49
P
D
@ T
C
= 100C
Maximum Power Dissipation
19
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbfin (1.1 Nm)
Rugged: 10sec short circuit capable at VGS = 15V
Low VCE(on) for 4 to 10kHz applications
IGBT co-packaged with ultra-soft-recovery anti-parallel
diodes
Industry standard TO-220AB package
Benefits
Best Value for Appliance and Industrial applications
Offers highest efficiency and short circuit capability for
intermediate applications
Provides best efficiency for the mid range frequency
(4 to 10kHz)
Optimized for Appliance and Industrial applications up to
1HP
High noise immune "Positive Only" gate drive - Negative
bias gate drive not necessary
For Low EMI designs - requires little or no snubbing
Single Package switch for bridge circuit applications
Compatible with high voltage Gate Drive IC's
Allows simpler gate drive
PD- 94151A
W
TO-220AB
www.irf.com
1
Short Circuit Rated
Fast IGBT
IRG4BC15MD
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
46
I
C
= 8.6A
Qge
Gate - Emitter Charge (turn-on)
4.2
nC
V
CC
= 400V
Q
gc
Gate - Collector Charge (turn-on)
15
V
GE
= 15V
t
d(on)
Turn-On Delay Time
21
T
J
= 25C
t
r
Rise Time
38
ns
I
C
= 8.6A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
540
810
V
GE
= 15V, R
G
= 75
t
f
Fall Time
350
530
Energy losses include "tail" and
E
on
Turn-On Switching Loss
0.32
diode reverse recovery.
E
off
Turn-Off Switching Loss
1.93
mJ
E
ts
Total Switching Loss
2.25
3.6
t
d(on)
Turn-On Delay Time
20
T
J
= 150C,
t
r
Rise Time
42
ns
I
C
= 8.6A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
650
V
GE
= 15V, R
G
= 75
t
f
Fall Time
590
Energy losses include "tail" and
E
ts
Total Switching Loss
3.0
mJ
diode reverse recovery.
L
E
Internal Emitter Inductance
7.5
nH
Measured 5mm from package
C
ies
Input Capacitance
340
V
GE
= 0V
C
oes
Output Capacitance
35
pF
V
CC
= 30V
C
res
Reverse Transfer Capacitance
8.8
= 1.0MHz
t
rr
Diode Reverse Recovery Time
28
42
ns
T
J
= 25C
38
57
T
J
= 125C
I
F
= 4.0A
I
rr
Diode Peak Reverse Recovery Current
2.9
5.2
A
T
J
= 25C
3.7
6.7
T
J
= 125C V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
40
60
nC
T
J
= 25C
70
110
T
J
= 125C di/dt 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
280
A/s
T
J
= 25C
During t
b
240
T
J
= 125C
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
0.65
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
1.88
2.3
I
C
= 8.6A
V
GE
= 15V
2.6
V
I
C
= 14A
2.1
I
C
= 8.6A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
4.0
6.5
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
-10
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
2.3
3.4
S
V
CE
= 100V, I
C
= 6.5A
I
CES
Zero Gate Voltage Collector Current
250
A
V
GE
= 0V, V
CE
= 600V
1400
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
1.5
1.8
V
I
C
= 4.0A
1.4
1.7
I
C
= 4.0A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
100
nA
V
GE
= 20V
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
IRG4BC15MD
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0.1
1
10
100
0.1
1
10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
T = 150 C
J
0.1
1
10
100
5.0
10.0
15.0
20.0
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 150 C
J
T = 25 C
J
0.1
1
10
100
f , Frequency ( kHz )
0
2
4
6
8
10
Load Current ( A )
Duty cycle : 50%
Tj = 125C
Tsink = 90C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 11W
60% of rated
voltage
Ideal diodes
IRG4BC15MD
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0
3
6
9
12
15
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
-60 -40 -20
0
20
40
60
80
100 120 140
TJ , Junction Temperature (C)
1.0
2.0
3.0
4.0
V
CE
, Collector-to Emitter Voltage (V)
IC = 17A
VGE = 15V
80s PULSE WIDTH
IC = 9.0A
IC = 4.3A
IRG4BC15MD
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
10
20
30
40
50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 9.0A
CC
C
0
10
20
30
40
50
60
70
80
RG, Gate Resistance (
)
2.00
2.10
2.20
2.30
Total Switching Losses (mJ)
VCC = 480V
VGE = 15V
TJ = 25C
I C = 8.6A
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature (C)
0.1
1
10
100
Total Switching Losses (mJ)
RG = 75
VGE = 15V
VCC = 480V
IC = 17A
IC = 9.0A
IC = 4.3A
1
10
100
0
100
200
300
400
500
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
C
ies
C
oes
C
res
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