4/24/2000
V
CES
= 600V
V
CE(on) typ.
=
2.27V
@V
GE
= 15V, I
C
= 9.0A
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
16
I
C
@ T
C
= 100C
Continuous Collector Current
9.0
A
I
CM
Pulsed Collector Current
Q
32
I
LM
Clamped Inductive Load Current
R
32
t
sc
Short Circuit Withstand Time
10
s
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
S
29
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
60
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
24
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
IRG4BC20K-S
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91620A
E
C
G
n-channel
2
D P a k
Features
Features
Features
Features
Features
High short circuit rating optimized for motor control,
t
sc
=10s, @360V V
CE
(start), T
J
= 125C,
V
GE
= 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBTs offer highest power
density motor controls possible
This part replaces the IRGBC20K-S and
IRGBC20M-S devices
Benefits
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
2.1
R
CS
Case-to-Sink, Flat, Greased Surface
0.5
C/W
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)
V
40
Wt
Weight
1.44
g
Thermal Resistance
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1
IRG4BC20K-S
2
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Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
34
51
I
C
= 9.0A
Q
ge
Gate - Emitter Charge (turn-on)
--
4.9
7.4
nC
V
CC
= 400V
See Fig.8
Q
gc
Gate - Collector Charge (turn-on)
--
14
21
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
28
--
t
r
Rise Time
--
27
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
150
220
I
C
= 9.0A, V
CC
= 480V
t
f
Fall Time
--
100
150
V
GE
= 15V, R
G
= 50
E
on
Turn-On Switching Loss
--
0.15
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
0.25
--
mJ
See Fig. 9,10,14
E
ts
Total Switching Loss
--
0.40
0.6
t
sc
Short Circuit Withstand Time
10
--
--
s
V
CC
= 400V, T
J
= 125C
V
GE
= 15V, R
G
= 50
, V
CPK
< 500V
t
d(on)
Turn-On Delay Time
--
28
--
T
J
= 150C,
t
r
Rise Time
--
29
--
I
C
= 9.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
190
--
V
GE
= 15V, R
G
= 50
t
f
Fall Time
--
190
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
0.68
--
mJ
See Fig. 11,14
E
on
Turn-On Switching Loss
--
0.07
--
T
J
= 25C
,
V
GE
= 15V, R
G
= 50
E
off
Turn-Off Switching Loss
--
0.13
--
mJ
I
C
= 6.0A, V
CC
= 480V
E
ts
Total Switching Loss
--
0.20
--
Energy losses include "tail"
L
E
Internal Emitter Inductance
--
7.5
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
450
--
V
GE
= 0V
C
oes
Output Capacitance
--
61
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
14
--
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
--
--
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.49
--
V/C
V
GE
= 0V, I
C
= 1.0mA
--
2.00
--
I
C
= 6.0A
--
2.27
2.8
I
C
= 9.0A V
GE
= 15V
--
3.01
--
I
C
= 16A
See Fig.2, 5
--
2.43
--
I
C
= 9.0A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-10
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
U
2.9
4.3
--
S
V
CE
=
100 V, I
C
= 9.0A
--
--
250
V
GE
= 0V, V
CE
= 600V
I
CES
Zero Gate Voltage Collector Current
--
--
2.0
A
V
GE
= 0V, V
CE
= 10V, T
J
= 25C
--
--
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
Details of note
Q
through
V
are on the last page
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
IRG4BC20K-S
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3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1
10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
1
10
100
5
10
15
20
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
Load Current ( A )
0 . 0
1 . 0
2 . 0
3 . 0
4 . 0
5 . 0
0 . 1
1
1 0
1 0 0
f, Frequency (kHz)
A
6 0 % o f ra t e d
vo l ta g e
Id e a l d io de s
S q u a re wave :
F o r b o th :
D u ty c yc le : 5 0%
T = 1 2 5 C
T = 9 0C
G a te d riv e a s sp e c ifie d
s in k
J
T ria n g u la r w a ve :
C la m p vo l t a g e :
8 0 % o f ra t e d
P o w e r D is s ip a t io n = 1 .8 W
55C
IRG4BC20K-S
4
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
4.0
5.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
4.5
C
I = A
9
C
I = A
18
C
25
50
75
100
125
150
0
5
10
15
20
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
9.0A
IRG4BC20K-S
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5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 9.0A
CC
C
0
10
20
30
40
50
0.2
0.3
0.4
0.5
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 9A
CC
GE
J
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
18
C
I = A
9
C
I = A
4.5
C
50
1
10
100
0
200
400
600
800
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
R
G
, Gate Resistance (
)
9.0A
9.0A
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