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Электронный компонент: IRG4BC20MD-S

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IRG4BC20MD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
E
G
n-c ha nn el
C
V
CES
= 600V
V
CE(on) typ.
= 1.85V
@V
GE
= 15V, I
C
= 11A
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
------
------
2.1
R
JC
Junction-to-Case - Diode
------
------
2.5
C/W
R
CS
Case-to-Sink, flat, greased surface
------
0.50
------
R
JA
Junction-to-Ambient, typical socket mount
-----
-----
80
Wt
Weight
------
2 (0.07)
------
g (oz)
Thermal Resistance
3/6/01
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
18
I
C
@ T
C
= 100C
Continuous Collector Current
11
I
CM
Pulsed Collector Current
Q
36
A
I
LM
Clamped Inductive Load Current
R
36
I
F
@ T
C
= 100C
Diode Continuous Forward Current
7.0
t
sc
Short Circuit Withstand Time
10
s
I
FM
Diode Maximum Forward Current
36
A
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
60
P
D
@ T
C
= 100C
Maximum Power Dissipation
24
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbfin (1.1 Nm)
Rugged: 10sec short circuit capable at V
GS
=15V
Low V
CE(on)
for 4 to 10kHz applications
IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
Industry standard D
2
Pak package
Benefits
Offers highest efficiency and short circuit
capability for intermediate applications
Provides best efficiency for the mid range frequency
(4 to 10kHz)
Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
For Low EMI designs- requires little or no snubbing
Single Package switch for bridge circuit applications
Compatible with high voltage Gate Driver IC's
Allows simpler gate drive
PD -94116
W
www.irf.com
1
Short Circuit Rated
Fast IGBT
D
2
Pak
IRG4BC20MD-S
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
S
600
----
----
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
----
0.67
----
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
----
1.85
2.1
I
C
= 11A
V
GE
= 15V
----
2.46
----
V
I
C
= 18A
See Fig. 2, 5
----
2.07
----
I
C
= 11A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
4.0
----
6.5
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage ----
-11
---- mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
T
3.0
3.6
----
S
V
CE
= 100V, I
C
= 11A
I
CES
Zero Gate Voltage Collector Current
----
----
250
A
V
GE
= 0V, V
CE
= 600V
----
----
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
----
1.4
1.7
V
I
C
= 8.0A
See Fig. 13
----
1.3
1.6
I
C
= 8.0A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
----
----
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
----
39
59
I
C
= 11A
Qge
Gate - Emitter Charge (turn-on)
----
5.3
8.0
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
----
20
30
V
GE
= 15V
t
d(on)
Turn-On Delay Time
----
21
----
T
J
= 25C
t
r
Rise Time
----
37
----
ns
I
C
= 11A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
----
463
690
V
GE
= 15V, R
G
= 50
t
f
Fall Time
----
340
510
Energy losses include "tail" and
E
on
Turn-On Switching Loss
----
0.41
----
diode reverse recovery.
E
off
Turn-Off Switching Loss
----
2.03
----
mJ
See Fig. 9, 10, 11, 18
E
ts
Total Switching Loss
----
2.44
3.7
t
d(on)
Turn-On Delay Time
----
19
----
T
J
= 150C, See Fig. 9, 10, 11, 18
t
r
Rise Time
----
41
----
ns
I
C
= 6.5A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
----
590
----
V
GE
= 15V, R
G
= 50
t
f
Fall Time
----
600
----
Energy losses include "tail" and
E
ts
Total Switching Loss
----
3.49
----
mJ
diode reverse recovery.
L
E
Internal Emitter Inductance
----
7.5
----
nH
Measured 5mm from package
C
ies
Input Capacitance
----
460
----
V
GE
= 0V
C
oes
Output Capacitance
----
54
----
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
----
14
----
= 1.0MHz
t
rr
Diode Reverse Recovery Time
----
37
55
ns
T
J
= 25C See Fig.
----
55
90
T
J
= 125C 14 I
F
= 8.0A
I
rr
Diode Peak Reverse Recovery Current ----
3.5
5.0
A
T
J
= 25C See Fig.
----
4.5
8.0
T
J
= 125C 15 V
R
= 200V
Q
r r
Diode Reverse Recovery Charge
----
65
138
nC
T
J
= 25C See Fig.
----
124
360
T
J
= 125C 16 di/dt 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
----
240
----
A/s
T
J
= 25C See Fig.
During t
b
----
210
----
T
J
= 125C 17
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
IRG4BC20MD-S
www.irf.com
3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0.1
1
10
100
6
8
10
12
14
16
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
T = 150 C
J
0.1
1.0
10.0
VCE , Collector-to-Emitter Voltage (V)
0.1
1
10
100
I C
, Collector-to Emitter Current (A)
VGE= 15V
20s PULSE WIDTH
TJ = 25C
TJ = 150C
0.1
1
10
100
f , Frequency ( kHz )
0.0
0.5
1.0
1.5
Load Current ( A )
Duty cycle : 50%
Tj = 125C
Tsink = 90C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 13W
60% of rated
voltage
Ideal diodes
IRG4BC20MD-S
4
www.irf.com
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
25
50
75
100
125
150
0
5
10
15
20
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
-60 -40 -20
0
20
40
60
80
100 120 140
TJ , Junction Temperature (C)
1.0
2.0
3.0
4.0
V
CE
, Collector-to Emitter Voltage (V)
IC = 22A
VGE = 15V
80s PULSE WIDTH
IC = 11A
IC = 5.5A
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRG4BC20MD-S
www.irf.com
5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
1
10
100
0
200
400
600
800
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 11A
CC
C
0
10
20
30
40
50
RG, Gate Resistance (
)
2.3
2.4
2.5
Total Switching Losses (mJ)
VCC = 480V
VGE = 15V
TJ = 25C
I C = 11A
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature (C)
0.1
1
10
100
Total Switching Losses (mJ)
RG = 50
VGE = 15V
VCC = 480V
IC = 22A
IC = 11A
IC = 5.5A