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Электронный компонент: IRG4BC20S

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Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
19
I
C
@ T
C
= 100C
Continuous Collector Current
10
A
I
CM
Pulsed Collector Current
Q
38
I
LM
Clamped Inductive Load Current
R
38
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
S
5.0
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
60
P
D
@ T
C
= 100C
Maximum Power Dissipation
24
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
C
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
IRG4BC20S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91597A
E
C
G
n-channel
Features
Standard: optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Benefits
V
CES
= 600V
V
CE(on) typ.
= 1.4V
@V
GE
= 15V, I
C
= 10A
Absolute Maximum Ratings
W
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
2.1
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient, typical socket mount
80
Wt
Weight
2.0 (0.07)
g (oz)
Thermal Resistance
TO-220AB
4/17/2000
www.irf.com
1
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IRG4BC20S
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
27
40
I
C
= 10A
Q
ge
Gate - Emitter Charge (turn-on)
--
4.3
6.5
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
10
15
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
27
--
t
r
Rise Time
--
9.7
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
540
810
I
C
= 10A, V
CC
= 480V
t
f
Fall Time
--
430
640
V
GE
= 15V, R
G
= 50
E
on
Turn-On Switching Loss
--
0.12
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
2.05
--
mJ
See Fig. 9, 10, 14
E
ts
Total Switching Loss
--
2.17
3.2
t
d(on)
Turn-On Delay Time
--
25
--
T
J
= 150C,
t
r
Rise Time
--
13
--
I
C
= 10A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
760
--
V
GE
= 15V, R
G
= 50
t
f
Fall Time
--
780
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
3.46
--
mJ
See Fig. 11, 14
L
E
Internal Emitter Inductance
--
7.5
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
550
--
V
GE
= 0V
C
oes
Output Capacitance
--
39
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
7.1
--
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
--
--
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.75
--
V/C
V
GE
= 0V, I
C
= 1.0mA
--
1.40
1.6
I
C
= 10A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
--
1.85
--
I
C
= 19A
See Fig.2, 5
--
1.44
--
I
C
= 10A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-11
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
U
2.0
5.8
--
S
V
CE
= 100V, I
C
= 10A
--
--
250
V
GE
= 0V, V
CE
= 600V
--
--
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25C
--
--
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
A
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
T
Pulse width
80s; duty factor 0.1%.
U
Pulse width 5.0s, single shot.
Notes:
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10H, R
G
= 50
,
(See fig. 13a)
S
Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4BC20S
www.irf.com
3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Load Current ( A )
1
10
100
1
10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
1
10
100
5
6
7
8
9
10
11
12
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
0
5
1 0
1 5
2 0
2 5
3 0
0 . 1
1
1 0
1 0 0
f, Frequency (kHz)
A
6 0 % o f ra t e d
vo lt a g e
Id e a l di o de s
S q u a re wave :
F o r b o t h :
D uty cy cle : 5 0%
T = 12 5 C
T = 90 C
G a t e drive a s s pe cified
s in k
J
T ria n g u la r w a ve :
C la m p v o l ta g e :
8 0 % o f ra t e d
P o w e r D i ss ip a t io n = 1 3 W
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IRG4BC20S
4
www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
25
50
75
100
125
150
0
5
10
15
20
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
5
C
I = A
10
C
I = A
20
C
5.0
A
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IRG4BC20S
www.irf.com
5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
5
10
15
20
25
30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 10A
CC
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = 50Ohm
V = 15V
V = 480V
G
GE
CC
I = A
20
C
I = A
10
C
I = A
5
C
1
10
100
0
200
400
600
800
1000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
5.0 A
0
10
20
30
40
50
2.00
2.04
2.08
2.12
2.16
2.20
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 10A
CC
GE
J
C
( )