Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
28
I
C
@ T
C
= 100C
Continuous Collector Current
16
I
CM
Pulsed Collector Current
Q
58
A
I
LM
Clamped Inductive Load Current
R
58
I
F
@ T
C
= 100C
Diode Continuous Forward Current
12
I
FM
Diode Maximum Forward Current
58
t
sc
Short Circuit Withstand Time
10
s
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
100
P
D
@ T
C
= 100C
Maximum Power Dissipation
42
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbfin (1.1 Nm)
IRG4PC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
E
G
n-ch an nel
C
V
CES
= 600V
V
CE(on) typ.
=
2.21V
@V
GE
= 15V, I
C
= 16A
Short Circuit Rated
UltraFast IGBT
4/15/2000
PD -91587A
TO-247AC
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
1.2
R
JC
Junction-to-Case - Diode
2.5
C/W
R
CS
Case-to-Sink, flat, greased surface
0.24
R
JA
Junction-to-Ambient, typical socket mount
40
Wt
Weight
6 (0.21)
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
Features
Features
Features
Features
Features
High short circuit rating optimized for motor control,
t
sc
=10s, @360V V
CE
(start), T
J
= 125C,
V
GE
= 15V
Combines low conduction losses with high
switching speed
Tighter parameter distribution and higher efficiency
than previous generations
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
Latest generation 4 IGBTs offer highest power density
motor controls possible
HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGBC30KD2 and IRGBC30MD2
products
For hints see design tip 97003
Benefits
www.irf.com
1
IRG4PC30KD
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
67
100
I
C
= 16A
Q
ge
Gate - Emitter Charge (turn-on)
--
11
16
nC
V
CC
= 400V
See Fig.8
Q
gc
Gate - Collector Charge (turn-on)
--
25
37
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
60
--
t
r
Rise Time
--
42
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
160
250
I
C
= 16A, V
CC
= 480V
t
f
Fall Time
--
80
120
V
GE
= 15V, R
G
= 23
E
on
Turn-On Switching Loss
--
0.60
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
0.58
--
mJ
and diode reverse recovery
E
ts
Total Switching Loss
--
1.18
1.6
See Fig. 9,10,14
t
sc
Short Circuit Withstand Time
10
--
--
s
V
CC
= 360V, T
J
= 125C
V
GE
= 15V, R
G
= 10
, V
CPK
< 500V
t
d(on)
Turn-On Delay Time
--
58
--
T
J
= 150C, See Fig. 11,14
t
r
Rise Time
--
42
--
I
C
= 16A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
210
--
V
GE
= 15V, R
G
= 23
,
t
f
Fall Time
--
160
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
1.69
--
mJ
and diode reverse recovery
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
920
--
V
GE
= 0V
C
oes
Output Capacitance
--
110
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
27
--
= 1.0MHz
t
rr
Diode Reverse Recovery Time
--
42
60
ns
T
J
= 25C See Fig.
--
80
120
T
J
= 125C 14 I
F
= 12A
I
rr
Diode Peak Reverse Recovery Current
--
3.5
6.0
A
T
J
= 25C See Fig.
--
5.6
10
T
J
= 125C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
--
80
180
nC
T
J
= 25C See Fig.
--
220
600
T
J
= 125C 16 di/dt = 200As
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
180
--
A/s
T
J
= 25C See Fig.
During t
b
--
160
--
T
J
= 125C 17
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
S
600
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.54
--
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.21
2.7
I
C
= 16A
V
GE
= 15V
--
2.88
--
V
I
C
= 28A
See Fig. 2, 5
--
2.36
--
I
C
= 16A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-12
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
T
5.4
8.1
--
S
V
CE
= 100V, I
C
= 16A
I
CES
Zero Gate Voltage Collector Current
--
--
250
A
V
GE
= 0V, V
CE
= 600V
--
--
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
--
1.4
1.7
V
I
C
= 12A
See Fig. 13
--
1.3
1.6
I
C
= 12A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
IRG4PC30KD
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3
0.1
1
10
100
0
2
4
6
8
10
12
14
16
18
f, Frequency (KHz)
LOAD CURRENT (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
For both:
D uty cy cle : 5 0 %
T = 12 5 C
T = 90 C
G a te d rive a s sp e cifie d
s in k
J
P ow e r Dis sip ation = W
6 0% of rate d
volta ge
I
Id e a l d io d e s
S q u a re w a v e :
24
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0.1
1
10
100
1
10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
0.1
1
10
100
5
10
15
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
IRG4PC30KD
4
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
25
50
75
100
125
150
0
5
10
15
20
25
30
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
4.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
8
C
I = A
16
C
I = A
32
C
8.0A
T
J
, Junction Temperature ( C )
IRG4PC30KD
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5
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
10
20
30
40
50
1.00
1.10
1.20
1.30
1.40
1.50
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 16A
CC
GE
J
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
32
C
I = A
16
C
I = A
8
C
23
R
G
, Gate Resistance (
)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0
20
40
60
80
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 16A
CC
C
1
10
100
0
300
600
900
1200
1500
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
8.0A
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