IRG4PC40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
E
G
n-ch an nel
C
V
CES
= 600V
V
CE(on) typ.
=
1.72V
@V
GE
= 15V, I
C
= 20A
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
------
------
0.77
R
JC
Junction-to-Case - Diode
------
------
1.7
C/W
R
CS
Case-to-Sink, flat, greased surface
------
0.24
------
R
JA
Junction-to-Ambient, typical socket mount
-----
-----
40
Wt
Weight
------
6 (0.21)
------
g (oz)
Thermal Resistance
UltraFast CoPack IGBT
4/17/97
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
40
I
C
@ T
C
= 100C
Continuous Collector Current
20
I
CM
Pulsed Collector Current
160
A
I
LM
Clamped Inductive Load Current
160
I
F
@ T
C
= 100C
Diode Continuous Forward Current
15
I
FM
Diode Maximum Forward Current
160
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
160
P
D
@ T
C
= 100C
Maximum Power Dissipation
65
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbfin (1.1 Nm)
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Benefits
Generation -4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
PD 9.1467D
W
TO-247AC
IRG4PC40UD
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
----
100
150
I
C
= 20A
Qge
Gate - Emitter Charge (turn-on)
----
16
25
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
----
40
60
V
GE
= 15V
t
d(on)
Turn-On Delay Time
----
54
----
T
J
= 25C
t
r
Rise Time
----
57
----
ns
I
C
= 20A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
----
110
165
V
GE
= 15V, R
G
= 10
t
f
Fall Time
----
80
120
Energy losses include "tail" and
E
on
Turn-On Switching Loss
----
0.71
----
diode reverse recovery.
E
off
Turn-Off Switching Loss
----
0.35
----
mJ
See Fig. 9, 10, 11, 18
E
ts
Total Switching Loss
----
1.10
1.5
t
d(on)
Turn-On Delay Time
----
40
----
T
J
= 150C, See Fig. 9, 10, 11, 18
t
r
Rise Time
----
52
----
ns
I
C
= 20A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
----
200
----
V
GE
= 15V, R
G
= 10
t
f
Fall Time
----
130
----
Energy losses include "tail" and
E
ts
Total Switching Loss
----
1.6
----
mJ
diode reverse recovery.
L
E
Internal Emitter Inductance
----
13
----
nH
Measured 5mm from package
C
ies
Input Capacitance
----
2100
----
V
GE
= 0V
C
oes
Output Capacitance
----
140
----
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
----
34
----
= 1.0MHz
t
rr
Diode Reverse Recovery Time
----
42
60
ns
T
J
= 25C See Fig.
----
74
120
T
J
= 125C 14 I
F
= 15A
I
rr
Diode Peak Reverse Recovery Current
----
4.0
6.0
A
T
J
= 25C See Fig.
----
6.5
10
T
J
= 125C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
----
80
180
nC
T
J
= 25C See Fig.
----
220
600
T
J
= 125C 16 di/dt 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
----
190
----
A/s
T
J
= 25C
During t
b
----
160
----
T
J
= 125C
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
----
----
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
----
0.63
----
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
----
1.72
2.1
I
C
= 20A
V
GE
= 15V
----
2.15
----
V
I
C
= 40A
See Fig. 2, 5
----
1.7
----
I
C
= 20A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
----
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage ----
-13
---- mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
11
18
----
S
V
CE
= 100V, I
C
= 20A
I
CES
Zero Gate Voltage Collector Current
----
----
250
A
V
GE
= 0V, V
CE
= 600V
----
----
3500
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
----
1.3
1.7
V
I
C
= 15A
See Fig. 13
----
1.2
1.6
I
C
= 15A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
----
----
100
nA
V
GE
= 20V
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
IRG4PC40UD
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
1 0
1 0 0
1 0 0 0
4
6
8
1 0
1 2
C
I , Collector-to-Emitter Current (A)
G E
T = 25C
T = 150C
J
J
V , Gate-to-Emitter Voltage (V)
A
V = 10V
5s PULSE WIDTH
C C
1
1 0
1 0 0
1 0 0 0
0 . 1
1
1 0
C E
C
I , Collector-to-Emitter Current (A)
V , Collector-to-Emitter Voltage (V)
T = 150C
T = 25C
J
J
V = 15V
20s PULSE WIDTH
G E
A
0
1 0
2 0
3 0
0 . 1
1
1 0
1 0 0
f, F re q u e n cy (kH z )
L
oad C
u
r
r
ent
(
A
)
A
6 0 % o f r a te d
v o lta g e
D u ty c ycle: 5 0%
T = 1 2 5 C
T = 90 C
G a te d r ive a s sp e cif ied
Tu rn -on lo sses in clu de
effe cts of reve rse rec ov ery
sin k
J
P ow e r D issipa tion = 3 5W
IRG4PC40UD
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
1 . 0
1 . 5
2 . 0
2 . 5
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
CE
V , Collector-to-Emitter Voltage (V)
V = 15V
80s PULSE WIDTH
G E
A
I = 40A
I = 20A
I = 10A
T , Junction Temperature (C)
J
C
C
C
0
1 0
2 0
3 0
4 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
Maximum DC Collector Current (A)
T , Case Temperature (C)
C
V = 15V
G E
A
0 .0 1
0 .1
1
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
1 0
t , R ectangular Pulse Duration (sec)
1
th
J
C
D = 0 .5 0
0.0 1
0.0 2
0 .05
0.1 0
0.2 0
S IN G LE P UL S E
(T H E R M A L R E S P O NS E )
T
h
er
m
a
l
Res
po
n
s
e
(
Z
)
P
t
2
1
t
D M
N o te s:
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
IRG4PC40UD
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
1 0 0 0
2 0 0 0
3 0 0 0
4 0 0 0
1
1 0
1 0 0
C E
C
,
C
apa
c
i
t
a
nc
e
(pF
)
V , C ollector-to-E m itter V olta ge (V )
A
V = 0 V , f = 1M H z
C = C + C , C S H O R T E D
C = C
C = C + C
G E
ie s g e g c c e
re s g c
o e s c e g c
C
ie s
C
re s
C
o es
0
4
8
1 2
1 6
2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
GE
V
,
G
a
t
e
-t
o
-
E
m
i
t
t
e
r
V
o
l
t
age (
V
)
g
Q , T otal G ate C ha rge (nC )
A
V = 40 0 V
I = 2 0 A
C E
C
1 . 0
1 . 2
1 . 4
1 . 6
1 . 8
0
1 0
2 0
3 0
4 0
5 0
6 0
G
Total Switching Losses (mJ)
R , Gate Resistance (
)
A
V = 480V
V = 15V
T = 25C
I = 20A
C C
G E
C
C
0 . 1
1
1 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
Total Switching Losses (mJ)
R = 10
V = 15V
V = 480V
A
I = 40A
I = 20A
I = 10A
G
G E
C C
C
C
C
T , Junction Temperature (C)
J
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