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Электронный компонент: IRG4PC40W

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Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
40
I
C
@ T
C
= 100C
Continuous Collector Current
20
A
I
CM
Pulsed Collector Current
Q
160
I
LM
Clamped Inductive Load Current
R
160
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
S
160
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
160
P
D
@ T
C
= 100C
Maximum Power Dissipation
65
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
C
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
IRG4PC40W
INSULATED GATE BIPOLAR TRANSISTOR
PD -91656C
E
C
G
n-channel
TO-247AC
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Benefits
V
CES
= 600V
V
CE(on) typ.
=
2.05V
@V
GE
= 15V, I
C
= 20A
4/15/2000
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.77
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
C/W
R
JA
Junction-to-Ambient, typical socket mount
40
Wt
Weight
6 (0.21)
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
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1
IRG4PC40W
2
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Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
98
147
I
C
= 20A
Q
ge
Gate - Emitter Charge (turn-on)
--
12
18
nC
V
CC
= 400V
See Fig.8
Q
gc
Gate - Collector Charge (turn-on)
--
36
54
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
27
--
t
r
Rise Time
--
22
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
100
150
I
C
= 20A, V
CC
= 480V
t
f
Fall Time
--
74
110
V
GE
= 15V, R
G
= 10
E
on
Turn-On Switching Loss
--
0.11
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
0.23
--
mJ
See Fig. 9,10, 14
E
ts
Total Switching Loss
--
0.34 0.45
t
d(on)
Turn-On Delay Time
--
25
--
T
J
= 150C,
t
r
Rise Time
--
23
--
I
C
= 20A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
170
--
V
GE
= 15V, R
G
= 10
t
f
Fall Time
--
124
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
0.85
--
mJ
See Fig.10,11, 14
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
1900
--
V
GE
= 0V
C
oes
Output Capacitance
--
140
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
35
--
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
--
--
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.44
--
V/C
V
GE
= 0V, I
C
= 1.0mA
--
2.05
2.5
I
C
= 20A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
--
2.36
--
I
C
= 40A
See Fig.2, 5
--
1.90
--
I
C
= 20A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
13
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
U
18
28
--
S
V
CE
=
100 V, I
C
=20A
--
--
250
V
GE
= 0V, V
CE
= 600V
--
--
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25C
--
--
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
n A
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
A
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
T
Pulse width
80s; duty factor
0.1%.
U
Pulse width 5.0s, single shot.
Notes:
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10H, R
G
= 10
,
(See fig. 13a)
S
Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4PC40W
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3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Load Current ( A )
0
1 0
2 0
3 0
4 0
5 0
0.1
1
1 0
1 0 0
1 0 0 0
f, Frequency (kH z)
A
6 0 % o f ra t e d
v o lta g e
Id e al d io d e s
S q u a re w ave :
F o r b o th :
D u ty c y c le : 5 0 %
T = 12 5 C
T = 9 0 C
G at e d r iv e as sp ec ifie d
s in k
J
T ria n g u la r w a ve :
C la m p vo l ta g e :
8 0 % o f ra te d
P o w e r D is s ip a tio n = 2 8 W
1
10
100
1000
1.0
2.0
3.0
4.0
5.0
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
80s PULSE WIDTH
GE
T = 150 C
J
T = 25 C
J
1
10
100
1000
5
7
9
11
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 150 C
J
T = 25 C
J
IRG4PC40W
4
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
40
C
I = A
20
C
I = A
10
C
25
50
75
100
125
150
0
10
20
30
40
50
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
IRG4PC40W
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5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
1
10
100
0
1000
2000
3000
4000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
0
20
40
60
80
100
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 20A
CC
C
10
20
30
40
50
60
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 20A
CC
GE
J
C
()
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = 10Ohm
V = 15V
V = 480V
G
GE
CC
I = A
40
C
I = A
20
C
I = A
10
C
10