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IRG4PC50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n -c h a n n e l
C
V
CES
= 600V
V
CE(on) typ.
=
1.84V
@V
GE
= 15V, I
C
= 30A
Short Circuit Rated
UltraFast IGBT
q
Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz, and Short Circuit Rated
to 10s @125C, V
GE
= 15V
q
Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
q
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft recovery anti-parallel diodes for use in
bridge configurations
q
Industry standard TO-247AC package
Benefits
q
Generation 4 IGBTs offer highest efficiencies available
q
HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing
q
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
PD -91582B
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
52
I
C
@ T
C
= 100C
Continuous Collector Current
30
I
CM
Pulsed Collector Current
104
A
I
LM
Clamped Inductive Load Current
104
I
F
@ T
C
= 100C
Diode Continuous Forward Current
25
I
FM
Diode Maximum Forward Current
280
t
sc
Short Circuit Withstand Time
10
s
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
200
P
D
@ T
C
= 100C
Maximum Power Dissipation
78
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbfin (1.1 Nm)
Absolute Maximum Ratings
W
Thermal Resistance
TO-247AC
Parameter
Min.
Typ.
Max.
Units
R
q
JC
Junction-to-Case - IGBT
--
--
0.64
R
q
JC
Junction-to-Case - Diode
--
--
0.83
C/W
R
q
CS
Case-to-Sink, flat, greased surface
--
0.24
--
R
q
JA
Junction-to-Ambient, typical socket mount
--
--
40
Wt
Weight
--
6 (0.21)
--
g (oz)
12/3/98
IRG4PC50KD
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
V
GE
= 0V, I
C
= 250A
D
V
(BR)CES
/
D
T
J
Temperature Coeff. of Breakdown Voltage
--
0.47
--
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
1.84
2.2
I
C
= 30A
V
GE
= 15V
--
2.19
--
V
I
C
= 52A
see figures 2, 5
--
1.79
--
I
C
= 25A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
D
V
GE(th)
/
D
T
J
Temperature Coeff. of Threshold Voltage
--
-12
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
17
24
--
S
V
CE
= 100V, I
C
= 30A
I
CES
Zero Gate Voltage Collector Current
--
--
250
A
V
GE
= 0V, V
CE
= 600V
--
--
6500
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
--
1.3
1.7
V
I
C
= 25A
see figure 13
--
1.2
1.5
I
C
= 25A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
200
300
I
C
= 30A
Q
ge
Gate - Emitter Charge (turn-on)
--
25
38
nC
V
CC
= 400V
see figure 8
Q
gc
Gate - Collector Charge (turn-on)
--
85
127
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
63
--
t
r
Rise Time
--
49
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
150
220
I
C
= 30A, V
CC
= 480V
t
f
Fall Time
--
95
140
V
GE
= 15V, R
G
= 5.0
W
E
on
Turn-On Switching Loss
--
1.61
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
0.84
--
mJ
and diode reverse recovery
E
ts
Total Switching Loss
--
2.45
3.0see figures 9,10,18
t
sc
Short Circuit Withstand Time
10
--
--
s
V
CC
= 360V, T
J
= 125C
V
GE
= 15V, R
G
= 10
W
, V
CPK
< 500V
t
d(on)
Turn-On Delay Time
--
61
--
T
J
= 150C,
see figures 11,18
t
r
Rise Time
--
46
--
I
C
= 30A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
310
--
V
GE
= 15V, R
G
= 5.0
W
t
f
Fall Time
--
170
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
3.53
--
mJ
and diode reverse recovery
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
3200
--
V
GE
= 0V
C
oes
Output Capacitance
--
370
--
pF
V
CC
= 30V
see figure 7
C
res
Reverse Transfer Capacitance
--
95
--
= 1.0MHz
t
rr
Diode Reverse Recovery Time
--
50
75
ns
T
J
= 25C see figure
--
105
160
T
J
= 125C 14 I
F
= 25A
I
rr
Diode Peak Reverse Recovery Current
--
4.5
10
A
T
J
= 25C see figure
--
8.0
15
T
J
= 125C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
--
112
375
nC
T
J
= 25C see figure
--
420 1200
T
J
= 125C 16 di/dt 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
250
--
A/s
T
J
= 25C see figure
During t
b
--
160
--
T
J
= 125C 17
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
IRG4PC50KD
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0.1
1
10
100
0
5
10
15
20
25
30
35
f, Frequency (KHz)
LOAD CURRENT (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
F or b oth:
D uty c y c le : 50%
T = 12 5 C
T = 90 C
G a te d riv e a s s pe c ified
sink
J
P o w e r D is s ip atio n = W
6 0% o f ra te d
vo lta ge
I
Id e a l d io d es
S q u a re w a v e :
40
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
1
10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
T = 150 C
J
1
10
100
1000
5
6
7
8
9
10
11
12
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
T = 150 C
J
150C
IRG4PC50KD
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
25
50
75
100
125
150
0
10
20
30
40
50
60
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
60
C
I = A
30
C
I = A
15
C
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRG4PC50KD
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5
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
60
C
I = A
30
C
I = A
15
C
0
10
20
30
40
50
2.0
2.5
3.0
3.5
4.0
4.5
G
(O
)
Total Switching Losses (mJ)
V = 480V
V = 15V
T = 25 C
I = 30A
CC
GE
J
C
Fig. 9 - Typical Switching Losses vs.
Gate Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
R
G
, Gate Resistance
( W )
5.0
W
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1
10
100
0
1000
2000
3000
4000
5000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cres
Coes
Cies
0
40
80
120
160
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 30A
CC
C
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