IRG4PC50U
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD 91470F
E
C
G
n-channel
TO-247AC
Features
Features
Features
Features
Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
V
CES
= 600V
V
CE(on) typ.
=
1.65V
@V
GE
= 15V, I
C
= 27A
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
----
0.64
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
----
C/W
R
JA
Junction-to-Ambient, typical socket mount
----
40
Wt
Weight
6 (0.21)
----
g (oz)
Thermal Resistance
Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
55
I
C
@ T
C
= 100C
Continuous Collector Current
27
A
I
CM
Pulsed Collector Current
Q
220
I
LM
Clamped Inductive Load Current
R
220
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
S
20
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
200
P
D
@ T
C
= 100C
Maximum Power Dissipation
78
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm from case )
C
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Absolute Maximum Ratings
W
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Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
----
180
270
I
C
= 27A
Q
ge
Gate - Emitter Charge (turn-on)
----
25
38
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
----
61
90
V
GE
= 15V
t
d(on)
Turn-On Delay Time
----
32
----
t
r
Rise Time
----
20
----
T
J
= 25C
t
d(off)
Turn-Off Delay Time
----
170
260
I
C
= 27A, V
CC
= 480V
t
f
Fall Time
----
88
130
V
GE
= 15V, R
G
= 5.0
E
on
Turn-On Switching Loss
----
0.12
----
Energy losses include "tail"
E
off
Turn-Off Switching Loss
----
0.54
----
mJ
See Fig. 10, 11, 13, 14
E
ts
Total Switching Loss
----
0.66
0.9
t
d(on)
Turn-On Delay Time
----
31
----
T
J
= 150C,
t
r
Rise Time
----
23
----
I
C
= 27A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
----
230
----
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
----
120
----
Energy losses include "tail"
E
ts
Total Switching Loss
----
1.6
----
mJ
See Fig. 13, 14
L
E
Internal Emitter Inductance
----
13
----
nH
Measured 5mm from package
C
ies
Input Capacitance
----
4000
----
V
GE
= 0V
C
oes
Output Capacitance
----
250
----
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
----
52
----
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
----
----
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
----
----
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage ----
0.60
----
V/C
V
GE
= 0V, I
C
= 1.0mA
----
1.65
2.0
I
C
= 27A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
----
2.0
----
I
C
= 55A
See Fig.2, 5
----
1.6
----
I
C
= 27A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
----
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
----
-13
----
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
U
16
24
----
S
V
CE
15V, I
C
= 27A
----
----
250
V
GE
= 0V, V
CE
= 600V
----
----
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25C
----
----
5000
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
----
----
100
n A
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
A
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
T
Pulse width
80s; duty factor
0.1%.
U
Pulse width 5.0s, single shot.
Notes:
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10H, R
G
= 5.0
,
(See fig. 13a)
S
Repetitive rating; pulse width limited by maximum
junction temperature.
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Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0.1
1
1 0
1 0 0
1 0 0 0
0
1
1 0
C E
C
I
,
C
o
l
l
e
c
to
r-to
-
E
m
i
t
te
r C
u
rr
e
n
t
(
A
)
V , C o lle c to r-to -E m itte r V o lta g e (V )
T = 1 5 0 C
T = 2 5 C
J
J
A
V = 1 5 V
2 0 s P U L S E W ID T H
G E
1
1 0
1 0 0
1 0 0 0
4
6
8
1 0
1 2
C
I
, C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
te
r
C
u
r
r
e
n
t
(
A
)
G E
T = 2 5 C
T = 1 5 0C
J
J
V , G a te -to -E m itte r V o lta g e (V )
A
V = 10 V
5 s P U L S E W IDTH
C C
0
2 0
4 0
6 0
8 0
0 . 1
1
1 0
1 0 0
f, F re qu e nc y (k H z)
L
oad
C
u
r
r
e
nt
(A
)
A
6 0 % o f ra ted
vo ltag e
Idea l d io des
S q u ar e w a ve :
F o r b o th :
D u t y c yc le: 5 0%
T = 1 2 5 C
T = 9 0 C
G a te d r ive a s sp ec ified
s in k
J
P o w e r D is sip atio n = 40 W
T rian gu la r w a ve:
C la m p vo lta g e :
8 0 % o f ra te d
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
1 . 0
1 . 5
2 . 0
2 . 5
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
CE
V
, C
o
l
l
e
c
to
r
-
to
-
E
m
i
tt
e
r
V
o
l
t
a
g
e
(
V
)
V = 1 5V
8 0 s P U L S E W ID TH
G E
A
T , Ju n c tio n Te m p e ra tu re (C )
J
I = 5 4 A
I = 2 7 A
I = 14 A
C
C
C
0
1 0
2 0
3 0
4 0
5 0
6 0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
M
a
x
i
m
u
m
D
C
C
o
l
l
e
c
t
o
r
C
u
rre
n
t
(A
)
T , C ase Tem perature (C)
C
V = 15 V
G E
0 .0 1
0 .1
1
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
1 0
t , R e c ta n g u la r P u ls e D ura tio n (s e c )
1
th
J
C
D = 0 .5 0
0 .0 1
0 .0 2
0 .0 5
0 .1 0
0 .2 0
S IN G L E P U L S E
( T H E R M A L R E S P O N S E )
T
her
m
a
l
R
e
s
pon
s
e
(
Z
)
P
t
2
1
t
D M
N ote s :
1 . D u ty f ac t or D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
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Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
2 0 0 0
4 0 0 0
6 0 0 0
8 0 0 0
1
1 0
1 0 0
C E
C
,
C
apaci
t
ance
(
p
F)
V , C o lle c to r -to -E m itte r V o lta g e (V )
A
V = 0 V , f = 1 M H z
C = C + C , C S H O R T E D
C = C
C = C + C
C
ie s
C
res
C
oe s
G E
i e s g e g c c e
re s g c
o e s c e g c
0
4
8
1 2
1 6
2 0
0
4 0
8 0
1 2 0
1 6 0
2 0 0
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Charge (nC)
A
V = 400V
I = 27A
C E
C
0 . 1
1
1 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
T
o
t
a
l
S
w
i
t
c
h
i
ng Lo
s
s
es
(
m
J
)
A
T , J u n ctio n T e m p e ra tu re (C )
J
I = 5 4 A
I = 2 7 A
I = 1 4 A
R = 5 .0
V = 1 5 V
V = 4 8 0 V
C
C
C
G
G E
C C
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
1 . 6
1 . 8
2 . 0
2 . 2
0
1 0
2 0
3 0
4 0
5 0
6 0
G
Total Switching Losses (mJ)
R , Gate Resistance (
)
A
V = 480V
V = 15V
T = 25C
I = 27A
C C
G E
J
C
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Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
0 . 0
1 . 0
2 . 0
3 . 0
0
1 0
2 0
3 0
4 0
5 0
C
T
o
t
a
l S
w
itc
h
in
g
L
o
s
s
e
s
(
m
J
)
I , C o lle cto r-to -E m itt e r C u rre n t (A )
A
R = 5 .0
T = 1 5 0 C
V = 4 8 0 V
V = 1 5 V
G
J
C C
G E
1
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
1 0 0 0
C
C E
G E
V , Collecto r-to-E m itter V oltage (V )
I
,
C
o
l
l
e
c
to
r
-
to
-
E
m
i
tt
e
r
C
u
r
r
e
n
t
(
A
)
S A FE O P E R A T IN G A R E A
V = 2 0V
T = 125 C
G E
J
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7
480V
4
X
I
C
@
25C
D .U .T.
5 0V
L
V *
C
Q
R
* Driver s am e ty pe as D .U .T .; Vc = 80% o f V ce (m ax )
* No te: D ue to th e 50V p ow er s up p ly, p ulse w id th a nd ind u ctor
w ill inc rea se to o b ta in ra ted Id.
1 00 0V
Fig. 13a -
Clamped Inductive
Load Test Circuit
Fig. 13b -
Pulsed Collector
Current Test Circuit
4 80 F
9 60 V
0 - 480V
R
L
=
t=5 s
d (o n )
t
t
f
t
r
9 0%
t
d (o ff)
1 0%
90 %
10 %
5 %
V
C
I
C
E
o n
E
o ff
ts o n o ff
E = ( E +E )
Q
R
S
Fig. 14b -
Switching Loss
Waveforms
5 0 V
D riv er*
1 00 0V
D .U .T.
I
C
C
V
Q
R
S
L
Fig. 14a -
Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
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Case Outline and Dimensions TO-247AC
D im e n s io n s in M illim e te rs a n d (In c h e s )
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
- D -
5 .3 0 ( .2 0 9 )
4 .7 0 ( .1 8 5 )
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
2 .5 0 (.0 8 9 )
1 .5 0 (.0 5 9 )
4
3 X
0 .8 0 (.0 3 1 )
0 .4 0 (.0 1 6 )
2 .6 0 ( .1 0 2 )
2 .2 0 ( .0 8 7 )
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
3 X
0 .2 5 (.0 1 0 )
M
C A
S
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
- C -
2 X
5 .5 0 (.2 17 )
4 .5 0 (.1 77 )
5 .5 0 (.2 1 7)
0 .2 5 (.0 1 0 )
1 .4 0 (.0 5 6 )
1 .0 0 (.0 3 9 )
D
M
M
B
- A -
1 5 .9 0 (.6 2 6 )
1 5 .3 0 (.6 0 2 )
- B -
1
2
3
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 )
1 4 .8 0 (.5 8 3 )
1 4 .2 0 (.5 5 9 )
2 .4 0 ( .0 9 4 )
2 .0 0 ( .0 7 9 )
2 X
2 X
5 .4 5 (.2 1 5 )
*
N O T E S :
1 D IM E N S IO N S & T O L E R A N C IN G
P E R A N S I Y 14 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M ILL IM E T E R S (IN C H E S ).
4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 A C .
L E A D A S S IG N M E N T S
1 - G A T E
2 - C O L L E C T O R
3 - E M IT T E R
4 - C O L L E C T O R
*
L O N G E R L E A D E D (2 0m m )
V E R S IO N A V A IL A B LE ( T O - 24 7 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B E R
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
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