IRG4PF50WD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-cha n ne l
C
Optimized for use in Welding and Switch-Mode
Power Supply applications
Industry benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest technology IGBT design offers tighter
parameter distribution coupled with
exceptional reliability
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Benefits
PD- 91788
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
0.64
R
JC
Junction-to-Case - Diode
0.83
C/W
R
CS
Case-to-Sink, flat, greased surface
0.24
R
JA
Junction-to-Ambient, typical socket mount
40
Wt
Weight
6 (0.21)
g (oz)
Thermal Resistance
Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-die
MOSFETs up to 100kHz
HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
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1
TO-247AC
V
CES
= 900V
V
CE(on) typ.
= 2.25V
@V
GE
= 15V, I
C
= 28A
Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
900
V
I
C
@ T
C
= 25C
Continuous Collector Current
51
I
C
@ T
C
= 100C
Continuous Collector Current
28
A
I
CM
Pulsed Collector Current
204
I
LM
Clamped Inductive Load Current
204
I
F
@ T
C
= 100C
Diode Continuous Forward Current
16
I
FM
Diode Maximum Forward Current
204
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
200
P
D
@ T
C
= 100C
Maximum Power Dissipation
78
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
C
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Absolute Maximum Ratings
W
IRG4PF50WD
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
900
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.295
--
V/C
V
GE
= 0V, I
C
= 3.5mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.25
2.7
I
C
= 28A
V
GE
= 15V
--
2.74
--
V
I
C
= 60A
See Fig. 2, 5
--
2.12
--
I
C
= 28A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-13
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
26
39
--
S
V
CE
= 50V, I
C
= 28A
I
CES
Zero Gate Voltage Collector Current
--
--
500
A
V
GE
= 0V, V
CE
= 900V
--
--
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25C
--
--
6.5
mA
V
GE
= 0V, V
CE
= 900V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
--
2.5
3.5
V
I
C
= 16A
See Fig. 13
--
2.1
3.0
I
C
= 16A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
160
240
I
C
= 28A
Qge
Gate - Emitter Charge (turn-on)
--
19
29
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
53
80
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
71
--
T
J
= 25C
t
r
Rise Time
--
50
--
ns
I
C
= 28A, V
CC
= 720V
t
d(off)
Turn-Off Delay Time
--
150
220
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
--
110
170
Energy losses include "tail" and
E
on
Turn-On Switching Loss
--
2.63
--
diode reverse recovery.
E
off
Turn-Off Switching Loss
--
1.34
--
mJ
See Fig. 9, 10, 18
E
ts
Total Switching Loss
--
3.97
5.3
t
d(on)
Turn-On Delay Time
--
69
--
T
J
= 150C, See Fig. 11, 18
t
r
Rise Time
--
52
--
ns
I
C
= 28A, V
CC
= 720V
t
d(off)
Turn-Off Delay Time
--
270
--
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
--
190
--
Energy losses include "tail" and
E
ts
Total Switching Loss
--
6.0
--
mJ
diode reverse recovery.
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
3300
--
V
GE
= 0V
C
oes
Output Capacitance
--
200
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
45
--
= 1.0MHz
t
rr
Diode Reverse Recovery Time
--
90
135
ns
T
J
= 25C See Fig.
--
164
245
T
J
= 125C 14 I
F
= 16A
I
rr
Diode Peak Reverse Recovery Current
--
5.8
10
A
T
J
= 25C See Fig.
--
8.3
15
T
J
= 125C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
--
260
675
nC
T
J
= 25C See Fig.
--
680 1838
T
J
= 125C 16 di/dt = 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
120
--
A/s
T
J
= 25C See Fig.
During t
b
--
76
--
T
J
= 125C 17
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
IRG4PF50WD
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3
0.1
1
10
100
0
10
20
30
40
f, Frequency (KHz)
LOAD CURRENT (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
F or b oth:
D uty c y c le : 50%
T = 12 5 C
T = 90 C
G a te d riv e a s s pe c ified
sink
J
P o w e r D is s ip atio n = W
6 0% o f ra te d
vo lta ge
I
Id e a l d io d es
S q u a re w a v e :
40
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
1
10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
T = 150 C
J
1
10
100
1000
5
6
7
8
9
10
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
T = 150 C
J
IRG4PF50WD
4
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
25
50
75
100
125
150
0
10
20
30
40
50
60
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
56
C
I = A
28
C
I = A
14
C
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRG4PF50WD
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5
-60 -40 -20
0
20
40
60
80 100 120 140 160
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R =
V = 15V
V = 720V
G
GE
CC
I = A
56
C
I = A
28
C
I = A
14
C
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5.0
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
40
80
120
160
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 28A
CC
C
1
10
100
0
1000
2000
3000
4000
5000
6000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
C
ies
C
oes
C
res
0
10
20
30
40
50
3.5
4.0
4.5
5.0
5.5
6.0
R , Gate Resistance
Total Switching Losses (mJ)
G
V = 720V
V = 15V
T = 25 C
I = 28A
CC
GE
J
C
(
)
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