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Электронный компонент: IRG4PH40UD

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7/7/2000
IRG4PH40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
E
G
n-ch an nel
C
V
CES
= 1200V
V
CE(on) typ.
= 2.43V
@V
GE
= 15V, I
C
= 21A
UltraFast CoPack IGBT
UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Benefits
Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
PD- 91621B
TO-247AC
Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
1200
V
I
C
@ T
C
= 25C
Continuous Collector Current
41
I
C
@ T
C
= 100C
Continuous Collector Current
21
I
CM
Pulsed Collector Current
Q
82
I
LM
Clamped Inductive Load Current
R
82
A
I
F
@ T
C
= 100C
Diode Continuous Forward Current
8.0
I
FM
Diode Maximum Forward Current
130
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
160
P
D
@ T
C
= 100C
Maximum Power Dissipation
65
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
C
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Absolute Maximum Ratings
W
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
0.77
R
JC
Junction-to-Case - Diode
1.7
C/W
R
CS
Case-to-Sink, flat, greased surface
0.24
R
JA
Junction-to-Ambient, typical socket mount
40
Wt
Weight
6 (0.21)
g (oz)
Thermal Resistance
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1
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IRG4PH40UD
2
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Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
86
130
I
C
= 21A
Qge
Gate - Emitter Charge (turn-on)
--
13
20
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
29
44
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
46
--
T
J
= 25C
t
r
Rise Time
--
35
--
ns
I
C
= 21A, V
CC
= 800V
t
d(off)
Turn-Off Delay Time
--
97
150
V
GE
= 15V, R
G
= 10
t
f
Fall Time
--
240
360
Energy losses include "tail" and
E
on
Turn-On Switching Loss
--
1.80
--
diode reverse recovery.
E
off
Turn-Off Switching Loss
--
1.93
--
mJ
See Fig. 9, 10, 18
E
ts
Total Switching Loss
--
3.73
4.6
t
d(on)
Turn-On Delay Time
--
42
--
T
J
= 150C, See Fig. 11, 18
t
r
Rise Time
--
32
--
ns
I
C
= 21A, V
CC
= 800V
t
d(off)
Turn-Off Delay Time
--
240
--
V
GE
= 15V, R
G
= 10
t
f
Fall Time
--
510
--
Energy losses include "tail" and
E
ts
Total Switching Loss
--
7.04
--
mJ
diode reverse recovery.
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
1800
--
V
GE
= 0V
C
oes
Output Capacitance
--
120
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
18
--
= 1.0MHz
t
rr
Diode Reverse Recovery Time
--
63
95
ns
T
J
= 25C See Fig.
--
106
160
T
J
= 125C 14 I
F
= 8.0A
I
rr
Diode Peak Reverse Recovery Current
--
4.5
8.0
A
T
J
= 25C See Fig.
--
6.2
11
T
J
= 125C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
--
140
380
nC
T
J
= 25C See Fig.
--
335
880
T
J
= 125C 16 di/dt = 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
133
--
A/s
T
J
= 25C See Fig.
During t
b
--
85
--
T
J
= 125C 17
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
S 1200 --
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.43
--
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.43
3.1
I
C
= 21A
V
GE
= 15V
--
2.97
--
V
I
C
= 41A
See Fig. 2, 5
--
2.47
--
I
C
= 21A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-11
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
T
16
24
--
S
V
CE
= 100V, I
C
= 21A
I
CES
Zero Gate Voltage Collector Current
--
--
250
A
V
GE
= 0V, V
CE
= 600V
--
--
5000
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
--
2.6
3.3
V
I
C
= 8.0A
See Fig. 13
--
2.4
3.1
I
C
= 8.0A, T
J
= 125C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
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IRG4PH40UD
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3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
5
6
7
8
9
10
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
0.1
1
10
100
0
5
10
15
20
25
f, Frequency (KHz)
LOAD CURRENT (A)
For both:
D uty cy cle : 5 0 %
T = 12 5 C
T = 90 C
G a te d rive a s sp e cifie d
s in k
J
P ow e r Dis sip ation = W
35
6 0% of rate d
volta ge
I
Id e a l d io d e s
S q u a re w a v e :
1
10
100
1
10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
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IRG4PH40UD
4
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
4.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
10.5
C
I = A
21
C
I = A
42
C
25
50
75
100
125
150
0
10
20
30
40
50
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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IRG4PH40UD
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5
0
10
20
30
40
50
3.0
3.5
4.0
4.5
5.0
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 800V
V = 15V
T = 25 C
I = 21A
CC
GE
J
C
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
20
40
60
80
100
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 21A
CC
C
1
10
100
0
1000
2000
3000
4000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
R
G
, Gate Resistance (
)
-60 -40 -20
0
20
40
60
80 100 120 140 160
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = Ohm
V = 15V
V = 800V
G
GE
CC
I = A
42
C
I = A
21
C
I = A
10.5
C
10