www.docs.chipfind.ru
07/19/04
IRG4PH40UD2PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 1.72V
@V
GE
= 15V, I
C
= 20A
UltraFast CoPack IGBT
UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Lead-Free
Benefits
Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing.
PD - 95570
TO-247AC
www.irf.com
1
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
40
A
I
C
@ T
C
= 100C
Continuous Collector Current
20
I
CM
Pulse Collector Current
160
I
LM
Clamped Inductive Load current
160
I
F
@ Tc = 100C
Diode Continuous Forward Current
10
I
FM
Diode Maximum Forward Current
40
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
160
W
P
D
@ T
C
= 100C Maximum Power Dissipation
65
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Storage Temperature Range, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 screw
Thermal / Mechanical Characteristics
Parameter
Min.
Typ.
Max. Units
R
JC
Junction-to-Case- IGBT
0.77
C/W
R
JC
Junction-to-Case- Diode
2.5
R
CS
Case-to-Sink, flat, greased surface
0.24
R
JA
Junction-to-Ambient, typical socket mount
40
Wt
Weight
6 (0.21)
g (oz.)
10 lbf
y
in (1.1N
y
m)
IRG4PH40UD2PbF
2
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Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.63
--
V/C V
GE
= 0V, I
C
= 1mA (25C-150C)
--
1.72
2.1
V
I
C
= 20A, V
GE
= 15V, T
J
= 25C
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.15
--
I
C
= 40A, V
GE
= 15V, T
J
= 125C
--
1.7
--
I
C
= 20A, V
GE
= 15V, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Threshold Voltage temp. coefficient
--
-13
--
mV/C V
CE
= V
GE
, I
C
= 250A
gfe
Forward Transconductance
g
11
18
--
S
V
CE
= 100V, I
C
= 20A
--
--
250
V
GE
= 0V, V
CE
= 600V
I
CES
Zero Gate Voltage Collector Current
--
--
2.0
A
V
GE
= 0V, V
CE
= 10V, T
J
= 25C
--
--
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
--
3.4
3.8
V
I
F
= 10A, V
GE
= 0V
--
3.3
3.7
I
F
= 10A, V
GE
= 0V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
110
130
I
C
= 20A
Q
ge
Gate-to-Emitter Charge (turn-on)
--
18
24
nC
V
CC
= 400V
Q
gc
Gate-to-Collector Charge (turn-on)
--
36
53
V
GE
= 15V
t
d(on)
Turn-On delay time
--
23
--
I
C
= 20A, V
CC
= 600V
t
r
Rise time
--
27
--
ns
V
GE
= 15V, R
G
= 10
t
d(off)
Turn-Off delay time
--
100
110
T
J
= 25C
t
f
Fall time
--
280
340
Energy losses inclued "tail"
E
on
Turn-On Switching Loss
--
1440
--
I
C
= 20A, V
CC
= 600V
E
off
Turn-Off Switching Loss
--
1410
--
J
V
GE
= 15V, R
G
= 10
E
tot
Total Switching Loss
--
2850
3740
T
J
= 25C
t
d(on)
Turn-On delay time
--
22
--
I
C
= 20A, V
CC
= 600V
t
r
Rise time
--
32
--
ns
V
GE
= 15V, R
G
= 10
, L = 1.0mH
t
d(off)
Turn-Off delay time
--
190
--
T
J
= 150C
t
f
Fall time
--
630
--
Energy losses inclued "tail"
E
TS
Total Switching Loss
--
5360
--
J
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm froom package
C
ies
Input Capacitance
--
2100
--
V
GE
= 0V
C
oes
Output Capacitance
--
99
--
pF
V
CC
= 30V
C
res
Reverse Transfer Capacitance
--
12
--
f = 1.0MHz
t
rr
Diode Reverse Recovery Time
--
50
76
ns
T
J
=25C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/s
--
72
110
T
J
=125C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/s
I
rr
Diode Peak Reverse Recovery Current
--
4.4
7.0
A
T
J
=25C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/s
--
5.9
8.8
T
J
=125C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/s
Q
rr
Diode Reverse Recovery Charge
--
130
200
nC
T
J
=25C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/s
--
250
380
T
J
=125C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
210
--
A/s
T
J
=25C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/s
During t
b
--
180
--
T
J
=125C, V
CC
= 200V, I
F
= 10A, di/dt = 200A/s
IRG4PH40UD2PbF
www.irf.com
3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0.1
1
10
100
f , Frequency ( kHz )
0
5
10
15
20
25
30
35
40
45
50
L
o
a
d
C
u
r
r
e
n
t
(
A
)
For both:
Duty cycle : 50%
Tj = 125C
Tsink = 90C
Gate drive as specified
Power Dissipation = 35W
60% of rated
voltage
I
Ideal diodes
Square wave:
1
10
100
1000
0.1
1
10
CE
C
I , C
o
lle
c
t
o
r-to
-
E
m
itte
r C
u
rre
n
t
(A
)
V , Collector-to-Emitter Voltage (V)
T = 150C
T = 25C
J
J
V = 15V
20s PULSE WIDTH
GE
A
1
10
100
1000
4
6
8
10
12
C
I
, C
o
ll
e
c
to
r-
to
-E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
GE
T = 25C
T = 150C
J
J
V , Gate-to-Emitter Voltage (V)
A
V = 10V
5s PULSE WIDTH
CC
IRG4PH40UD2PbF
4
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0
10
20
30
40
25
50
75
100
125
150
Ma
x
i
mu
m DC Co
lle
c
t
o
r
Cu
r
r
e
n
t
(
A
)
T , Case Temperature (C)
C
V = 15V
GE
A
1.0
1.5
2.0
2.5
-60
-40
-20
0
20
40
60
80
100 120
140 160
CE
V ,
C
o
l
l
e
ct
or
-
t
o-
Em
i
t
t
e
r
Vol
t
age (
V
)
V = 15V
80s PULSE WIDTH
GE
A
I = 40A
I = 20A
I = 10A
T , Junction Temperature (C)
J
C
C
C
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
th
JC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
T
h
e
r
m
a
l
Re
sp
ons
e (Z
)
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
IRG4PH40UD2PbF
www.irf.com
5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VCC= 400V
IC= 20A
0
10
20
30
40
50
RG, Gate Resistance (
)
2500
2750
3000
3250
3500
T
o
t
a
l
S
w
i
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
VCE = 600V
VGE = 15V
TJ = 25C
IC = 20A
1
10
VCE, Collector-toEmitter-Voltage(V)
0
500
1000
1500
2000
2500
3000
3500
4000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
VGS = 0V, f = 1 MHZ
Cies = Cge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
-55
-5
45
95
145
TJ, Juntion Temperature (C)
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
T
o
t
a
l
S
w
i
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
RG = 10
VGE = 15V
IC = 40A
IC = 20A
IC = 10A
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