7/7/2000
IRG4PH50S
PD -91712A
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
1200
V
I
C
@ T
C
= 25C
Continuous Collector Current
57
I
C
@ T
C
= 100C
Continuous Collector Current
33
A
I
CM
Pulsed Collector Current
Q
114
I
LM
Clamped Inductive Load Current
R
114
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
S
270
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
200
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
80
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
E
C
G
n-channel
TO-247AC
Features
Features
Features
Features
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
V
CES
=1200V
V
CE(on) typ.
= 1.47V
@V
GE
= 15V, I
C
= 33A
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.64
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
C/W
R
JA
Junction-to-Ambient, typical socket mount
40
Wt
Weight
6.0 (0.21)
g (oz)
Thermal Resistance
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Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
167
251
I
C
= 33A
Q
ge
Gate - Emitter Charge (turn-on)
--
25
38
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
55
83
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
32
--
t
r
Rise Time
--
29
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
845 1268
I
C
= 33A, V
CC
= 960V
t
f
Fall Time
--
425
638
V
GE
= 15V, R
G
= 5.0
E
on
Turn-On Switching Loss
--
1.80
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
19.6
--
mJ
See Fig. 9, 10, 14
E
ts
Total Switching Loss
--
21.4
44
t
d(on)
Turn-On Delay Time
--
32
--
T
J
= 150C,
t
r
Rise Time
--
30
--
I
C
= 33A, V
CC
= 960V
t
d(off)
Turn-Off Delay Time
--
1170
--
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
--
1000
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
37
--
mJ
See Fig. 10,11,14
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
3600
--
V
GE
= 0V
C
oes
Output Capacitance
--
160
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
30
--
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
--
--
V
V
GE
= 0V, I
C
= 1.0 A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
1.22
--
V/C
V
GE
= 0V, I
C
= 2.0 mA
--
1.47
1.7
I
C
= 33A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
--
1.75
--
I
C
= 57A
See Fig.2, 5
--
1.55
--
I
C
= 33A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
DV
GE(th)
/DT
J
Temperature Coeff. of Threshold Voltage
--
-11
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
U
27
40
--
S
V
CE
= 100V, I
C
= 33A
--
--
250
V
GE
= 0V, V
CE
= 1200V
--
--
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25C
--
--
1000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
A
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
T
Pulse width
80s; duty factor 0.1%.
U
Pulse width 5.0s, single shot.
Notes:
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10H, R
G
= 5.0
,
(See fig. 13a)
S
Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4PH50S
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
0.0
1.0
2.0
3.0
4.0
5.0
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
80s PULSE WIDTH
GE
T = 150 C
J
T = 25 C
J
1
10
100
1000
5
6
7
8
9
10
11
12
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
T = 150 C
J
0
20
40
60
0.1
1
10
f, F reque ncy (kH z)
L
o
a
d
C
u
rr
e
n
t
(A
)
A
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T = 125C
T = 90C
Gate drive as specified
sink
J
Power Dissipation = 40W
Triangular wave:
Clamp voltage:
80% of rated
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0
10
20
30
40
50
60
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
66
C
I = A
33
C
I = A
16.5
C
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Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
15
1
10
100
0
1000
2000
3000
4000
5000
6000
7000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
C
ies
C
oes
C
res
0
25
50
75
100
125
150
175
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 33A
CC
C
0
10
20
30
40
50
21.0
22.0
23.0
24.0
25.0
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 960V
V = 15V
T = 25 C
I = 33A
CC
GE
J
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
1
10
100
1000
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = 5Ohm
V = 15V
V = 960V
G
GE
CC
I = A
66
C
I = A
33
C
I = A
16.5
C
5
R
G
, Gate Resistance
( )
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Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Reverse Bias SOA
0
10
20
30
40
50
60
70
0
20
40
60
80
100
120
I , Collector Current (A)
Total Switching Losses (mJ)
C
R = 5Ohm
T = 150 C
V = 960V
V = 15V
G
J
CC
GE
1
10
100
1000
1
10
100
1000
10000
V = 20V
T = 125 C
GE
J
o
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
5
IRG4PH50S
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7
960V
4
X
I
C
@
25C
D .U .T.
5 0V
L
V *
C
Q
R
* Driver s am e ty pe as D .U .T .; Vc = 80% o f V ce (m ax )
* No te: D ue to th e 50V p ow er s up p ly, p ulse w id th a nd ind u ctor
w ill inc rea se to o b ta in ra ted Id.
1 00 0V
Fig. 13a -
Clamped Inductive
Load Test Circuit
Fig. 13b -
Pulsed Collector
Current Test Circuit
4 80 F
9 60 V
0-960V
R
L
=
Fig. 14b -
Switching Loss
Waveforms
5 0 V
D riv er*
10 00 V
D .U .T.
I
C
C
V
Q
R
S
L
Fig. 14a -
Switching
Loss Test Circuit
* Driver same type
as D.U.T., VC = ----V
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Case Outline and Dimensions -- TO-247AC
D im e n s io n s in M illim e te rs a n d (In c h e s )
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
- D -
5 .3 0 ( .2 0 9 )
4 .7 0 ( .1 8 5 )
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
2 .5 0 (.0 8 9 )
1 .5 0 (.0 5 9 )
4
3 X
0 .8 0 (.0 3 1 )
0 .4 0 (.0 1 6 )
2 .6 0 ( .1 0 2 )
2 .2 0 ( .0 8 7 )
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
3 X
0 .2 5 (.0 1 0 )
M
C A
S
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
- C -
2 X
5 .5 0 (.2 17 )
4 .5 0 (.1 77 )
5 .5 0 (.2 1 7)
0 .2 5 (.0 1 0 )
1 .4 0 (.0 5 6 )
1 .0 0 (.0 3 9 )
D
M
M
B
- A -
1 5 .9 0 (.6 2 6 )
1 5 .3 0 (.6 0 2 )
- B -
1
2
3
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 )
1 4 .8 0 (.5 8 3 )
1 4 .2 0 (.5 5 9 )
2 .4 0 ( .0 9 4 )
2 .0 0 ( .0 7 9 )
2 X
2 X
5 .4 5 (.2 1 5 )
*
N O T E S :
1 D IM E N S IO N S & T O L E R A N C IN G
P E R A N S I Y 14 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M ILL IM E T E R S (IN C H E S ).
4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 A C .
L E A D A S S IG N M E N T S
1 - G A T E
2 - C O L L E C T O R
3 - E M IT T E R
4 - C O L L E C T O R
*
L O N G E R L E A D E D (2 0m m )
V E R S IO N A V A IL A B LE ( T O - 24 7 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B E R
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 7/00
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