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Электронный компонент: IRG4PH50U

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Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
1200
V
I
C
@ T
C
= 25C
Continuous Collector Current
45
I
C
@ T
C
= 100C
Continuous Collector Current
24
A
I
CM
Pulsed Collector Current
Q
180
I
LM
Clamped Inductive Load Current
R
180
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
S
170
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
200
P
D
@ T
C
= 100C
Maximum Power Dissipation
78
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
C
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
IRG4PH50U
Ultra Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
TO-247AC
Features
Features
Features
Features
Features
Benefits
V
CES
= 1200V
V
CE(on) typ.
=
2.78V
@V
GE
= 15V, I
C
= 24A
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.64
R
CS
Case-to-Sink, Flat, Greased Surface
0.24
C/W
R
JA
Junction-to-Ambient, typical socket mount
40
Wt
Weight
6 (0.21)
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
Optimized for power conversion; SMPS, UPS
and welding
Industry standard TO-247AC package
Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
Much lower conduction losses than MOSFETs
More efficient than short circuit rated IGBTs
01/14/02
www.irf.com
1
PD - 91574B
IRG4PH50U
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
--
--
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
1.20
--
V/C
V
GE
= 0V, I
C
= 1.0mA
--
2.56
3.5
I
C
= 20A
--
2.78
3.7
I
C
= 24A V
GE
= 15V
--
3.20
--
I
C
= 45A
See Fig.2, 5
--
2.54
--
I
C
= 24A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-13
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
U
23
35
--
S
V
CE
=
100V, I
C
= 24A
--
--
250
V
GE
= 0V, V
CE
= 1200V
I
CES
Zero Gate Voltage Collector Current
--
--
2.0
A
V
GE
= 0V, V
CE
= 24V, T
J
= 25C
--
--
5000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
160
250
I
C
= 24A
Q
ge
Gate - Emitter Charge (turn-on)
--
27
40
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
53
83
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
35
--
t
r
Rise Time
--
15
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
200
350
I
C
= 24A, V
CC
= 960V
t
f
Fall Time
--
290
500
V
GE
= 15V, R
G
= 5.0
E
on
Turn-On Switching Loss
--
0.53
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
1.41
--
mJ
See Fig. 9, 10, 14
E
ts
Total Switching Loss
--
1.94
2.6
t
d(on)
Turn-On Delay Time
--
31
--
T
J
= 150C
t
r
Rise Time
--
18
--
I
C
= 24A, V
CC
= 960V
t
d(off)
Turn-Off Delay Time
--
320
--
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
--
280
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
5.40
--
See Fig. 11, 14
E
on
Turn-On Switching Loss
--
0.35
--
T
J
= 25C
,
V
GE
= 15V, R
G
= 5.0
E
off
Turn-Off Switching Loss
--
1.43
--
I
C
= 20A, V
CC
= 960V
--
1.78
2.9
Energy losses include "tail"
--
4.56
--
See Fig. 9, 10, 11, 14, T
J
= 150C
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
3600
--
V
GE
= 0V
C
oes
Output Capacitance
--
160
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
31
--
= 1.0MHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
V
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
mJ
S
Repetitive rating; pulse width limited by maximum
junction temperature.
T
Pulse width
80s; duty factor
0.1%.
U
Pulse width 5.0s, single shot.
Notes:
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10H, R
G
= 5.0
,
(See fig. 13a)
V
CE(ON)
Collector-to-Emitter Saturation Voltage
mJ
ns
E
ts
Total Switching Loss
IRG4PH50U
www.irf.com
3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0
2 0
4 0
6 0
0 . 1
1
1 0
1 0 0
f, Frequency (kHz)
Load Current (A)
A
6 0% of rate d
volta ge
I
Id e a l d io d e s
S q u a re w a v e :
F o r b o th :
D uty c yc le: 5 0 %
T = 1 25 C
T = 9 0C
G ate driv e as s pe c ifie d
s in k
J
P ow er D issipa tio n = 40W
Tria ngula r w a ve :
I
C lam p v olta ge :
8 0% of ra ted
1
10
100
1000
1
10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
1
10
100
1000
5
6
7
8
9
10
11
12
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
IRG4PH50U
4
www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
2.0
2.5
3.0
3.5
4.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
12
C
I = A
24
C
I = A
48
C
25
50
75
100
125
150
0
10
20
30
40
50
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRG4PH50U
www.irf.com
5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
40
80
120
160
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 24A
CC
C
1
10
100
0
1000
2000
3000
4000
5000
6000
7000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
0
10
20
30
40
50
RG, Gate Resistance (
)
0.0
1.0
2.0
3.0
4.0
5.0
Total Switching Losses (mJ)
VCC = 960V
VGE = 15V
TJ = 25C
I C = 24A
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature (C)
0.1
1
10
100
Total Switching Losses (mJ)
RG = 5.0
VGE = 15V
VCC = 960V
IC = 48A
IC = 24A
IC = 12A