7/7/2000
IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
E
G
n-c ha nn el
C
V
CES
= 1200V
V
CE(on) typ.
= 2.78V
@V
GE
= 15V, I
C
= 24A
UltraFast CoPack IGBT
UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package
Benefits
Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
TO-247AC
Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
1200
V
I
C
@ T
C
= 25C
Continuous Collector Current
45
I
C
@ T
C
= 100C
Continuous Collector Current
24
A
I
CM
Pulsed Collector Current
Q
180
I
LM
Clamped Inductive Load Current
R
180
I
F
@ T
C
= 100C
Diode Continuous Forward Current
16
I
FM
Diode Maximum Forward Current
180
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
200
P
D
@ T
C
= 100C
Maximum Power Dissipation
78
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
C
Mounting torque, 6-32 or M3 screw.
10 lbfin (1.1Nm)
Absolute Maximum Ratings
W
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
0.64
R
JC
Junction-to-Case - Diode
0.83
C/W
R
CS
Case-to-Sink, flat, greased surface
0.24
R
JA
Junction-to-Ambient, typical socket mount
40
Wt
Weight
6 (0.21)
g (oz)
Thermal Resistance
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1
PD 91573A
IRG4PH50UD
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
S 1200 --
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
1.20
--
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.56
3.5
I
C
= 20A
V
GE
= 15V
--
2.78
3.7
I
C
= 24A
--
3.20
--
V
I
C
= 45A
See Fig. 2, 5
--
2.54
--
I
C
= 24A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-13
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
T
23
35
--
S
V
CE
= 100V, I
C
= 24A
I
CES
Zero Gate Voltage Collector Current
--
--
250
A
V
GE
= 0V, V
CE
= 1200V
--
--
6500
V
GE
= 0V, V
CE
= 1200V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
--
2.5
3.5
V
I
C
= 16A
See Fig. 13
--
2.1
3.0
I
C
= 16A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
160
250
I
C
= 24A
Qge
Gate - Emitter Charge (turn-on)
--
27
40
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
53
80
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
47
--
T
J
= 25C
t
r
Rise Time
--
24
--
ns
I
C
= 24A, V
CC
= 800V
t
d(off)
Turn-Off Delay Time
--
110
170
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
--
180
260
Energy losses include "tail" and
E
on
Turn-On Switching Loss
--
2.10
--
diode reverse recovery.
E
off
Turn-Off Switching Loss
--
1.50
--
mJ
See Fig. 9, 10, 18
E
ts
Total Switching Loss
--
3.60
4.6
t
d(on)
Turn-On Delay Time
--
46
--
T
J
= 150C, See Fig. 11, 18
t
r
Rise Time
--
27
--
ns
I
C
= 24A, V
CC
= 800V
t
d(off)
Turn-Off Delay Time
--
240
--
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
--
330
--
Energy losses include "tail" and
E
ts
Total Switching Loss
--
6.38
--
mJ
diode reverse recovery.
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
3600
--
V
GE
= 0V
C
oes
Output Capacitance
--
160
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
31
--
= 1.0MHz
t
rr
Diode Reverse Recovery Time
--
90
135
ns
T
J
= 25C See Fig.
--
164
245
T
J
= 125C 14 I
F
= 16A
I
rr
Diode Peak Reverse Recovery Current
--
5.8
10
A
T
J
= 25C See Fig.
--
8.3
15
T
J
= 125C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
--
260
675
nC
T
J
= 25C See Fig.
--
680 1838
T
J
= 125C 16 di/dt = 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
120
--
A/s
T
J
= 25C See Fig.
During t
b
--
76
--
T
J
= 125C 17
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
IRG4PH50UD
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
0.1
1
10
100
0
5
10
15
20
25
30
f, Frequency (KHz)
LOAD CURRENT (A)
F o r b o th :
D u ty c y c le : 5 0 %
T = 1 2 5 C
T = 9 0 C
G a te d riv e a s s p e c ifie d
sink
J
P o w e r D is s ip a tio n = W
6 0% of rate d
volta ge
I
Id e a l d io d e s
S q u a re w a v e :
40
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
1
10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
1
10
100
1000
5
6
7
8
9
10
11
12
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
2.0
2.5
3.0
3.5
4.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
12
C
I = A
24
C
I = A
48
C
25
50
75
100
125
150
0
10
20
30
40
50
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0
40
80
120
160
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 24A
CC
C
1
10
100
0
1000
2000
3000
4000
5000
6000
7000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
10
20
30
40
50
3.00
3.40
3.80
4.20
4.60
5.00
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 25A
CC
GE
J
C
24A
-60 -40 -20
0
20
40
60
80 100 120 140 160
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = Ohm
V = 15V
V = 800V
G
GE
CC
I = A
48
C
I = A
24
C
I = A
12
C
5.0
Total Switching Losses ( mJ)
IRG4PH50UD
6
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Fig. 12 - Turn-Off SOA
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
0
10
20
30
40
50
0
3
6
9
12
15
I , Collector-to-emitter Current (A)
Total Switching Losses (mJ)
C
R = Ohm
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
5.0
1
10
100
1000
1
10
100
1000
10000
V = 20V
T = 125 C
GE
J
o
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
SAFE OPERATING AREA
1
1 0
1 0 0
1 0 0 0
0.0
2.0
4.0
6.0
8.0
F M
T = 150C
T = 125C
T = 25C
J
J
J
F orw ard V oltage D rop - V (V )
Instantaneous Forward Current ( A )
IRG4PH50UD
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Fig. 14 - Typical Reverse Recovery vs. di
f
/dt
Fig. 15 - Typical Recovery Current vs. di
f
/dt
Fig. 16 - Typical Stored Charge vs. di
f
/dt
Fig. 17 - Typical di
(rec)M
/dt vs. di
f
/dt
0
1 0 0
2 0 0
3 0 0
1 0 0
1 0 0 0
t
rr - (n
s
)
f
d i /d t - (A / s)
I = 3 2 A
I = 1 6A
I = 8 .0 A
F
F
F
V = 2 0 0 V
T = 1 2 5 C
T = 2 5 C
R
J
J
0
3 0 0
6 0 0
9 0 0
1 2 0 0
1 0 0
1 0 0 0
f
d i /d t - (A / s)
RR
Q
-
(
n
C
)
I = 32 A
I = 1 6A
I = 8.0A
F
F
F
V = 2 0 0 V
T = 1 2 5 C
T = 2 5 C
R
J
J
1 0
1 0 0
1 0 0 0
1 0 0
1 0 0 0
f
d i /d t - (A / s)
d
i
(re
c
)
M
/
d
t
- (A
/
s
)
I = 32 A
I =1 6A
I = 8 .0 A
F
F
F
V = 2 0 0 V
T = 1 2 5 C
T = 2 5 C
R
J
J
0
1 0
2 0
3 0
4 0
1 0 0
1 0 0 0
f
d i /d t - (A / s)
RRM
I -
(
A
)
I = 8 .0A
I = 16 A
I = 3 2 A
F
F
F
V = 2 0 0 V
T = 1 2 5 C
T = 2 5 C
R
J
J
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Same ty p e
device as
D .U.T .
D .U .T .
430F
80%
o f Vce
Fig. 18a -
Test Circuit for Measurement of
I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
, I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
Fig. 18b -
Test Waveforms for Circuit of Fig. 18a, Defining
E
off
, t
d(off)
, t
f
V ce ie d t
t2
t1
5 % V c e
Ic
Ip k
V c c
1 0 % Ic
V c e
t1
t2
D U T V O L T A G E
A N D C U R R E N T
G A T E V O L T A G E D .U .T .
+ V g
1 0 % +V g
9 0 % Ic
tr
td (o n )
D IO D E R E V E R S E
R E C O V E R Y E N E R G Y
tx
E o n =
E re c =
t4
t3
V d id d t
t4
t3
D IO D E R E C O V E R Y
W A V E F O R M S
Ic
V p k
1 0 % V c c
Irr
1 0 % Irr
V cc
trr
Q rr =
trr
tx
id d t
Fig. 18c -
Test Waveforms for Circuit of Fig. 18a,
Defining E
on
, t
d(on)
, t
r
Fig. 18d -
Test Waveforms for Circuit of Fig. 18a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Vd Ic dt
Vce Ic dt
Ic dt
t=5s
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
C
I
C
E
on
E
off
ts on off
E = (E +E )
V
V
ge
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V g
G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
D.U.T.
V *
c
5 0 V
L
1 0 0 0 V
6 0 0 0 F
1 0 0 V
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current
Test Circuit
R
L
=
800V
4 X I
C
@25C
0 - 800V
Figure 18e. Macro Waveforms for
Figure 18a's
Test Circuit
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D im e n s io n s in M illim e te rs a n d (In c h e s )
CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P)
- D -
5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
3 .6 5 ( .1 4 3 )
3 .5 5 ( .1 4 0 )
2.5 0 ( .0 8 9)
1.5 0 ( .0 5 9)
4
3 X
0 .8 0 ( .0 3 1 )
0 .4 0 ( .0 1 6 )
2 . 6 0 ( .1 0 2 )
2 . 2 0 ( .0 8 7 )
3 . 4 0 ( .1 3 3 )
3 . 0 0 ( .1 1 8 )
3 X
0.2 5 ( .0 1 0 )
M
C A
S
4 .3 0 ( .1 7 0 )
3 .7 0 ( .1 4 5 )
- C -
2X
5.5 0 ( .2 1 7)
4.5 0 ( .1 7 7)
5 .5 0 (.2 17 )
0 .2 5 ( .0 1 0 )
1 .4 0 ( .0 56 )
1 .0 0 ( .0 39 )
D
M
M
B
- A -
1 5 .9 0 ( .6 2 6 )
1 5 .3 0 ( .6 0 2 )
- B -
1
2
3
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 )
1 4 .8 0 (.5 8 3 )
1 4 .2 0 (.5 5 9 )
2 .4 0 (.0 9 4 )
2 .0 0 (.0 7 9 )
2 X
2 X
5 . 4 5 ( .2 1 5 )
*
N O T E S :
1 D IM E N S IO N S & T O LE R A N C IN G
P E R A N S I Y 14 .5M , 1 98 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M IL LIM E T E R S (IN C H E S ).
4 C O N F O R M S T O J E D E C O U T L IN E
T O -2 4 7A C .
L E A D A S S IG N M E N T S
1 - G A T E
2 - C O L L E C T O R
3 - E M IT T E R
4 - C O L L E C T O R
*
LO N G E R LE A D E D (2 0m m )
V E R S IO N A V A IL A B L E (T O -2 47 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B E R
Case Outline TO-247AC
Notes:
QRepetitive rating: V
GE
=20V; pulse width limited by maximum junction temperature
(figure 20)
RV
CC
=80%(V
CES
), V
GE
=20V, L=10H, R
G
= 5.0
(figure 19)
SPulse width 80s; duty factor 0.1%.
TPulse width 5.0s, single shot.
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Data and specifications subject to change without notice. 7/00
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