IRG4PSH71K
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91687A
E
C
G
n-channel
PRELIMINARY
Features
Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
High short circuit rating IGBTs, optimized for
motorcontrol
Minimum switching losses combined with low
conduction losses
Tightest parameter distribution
Creepage distance increased to 5.35mm
Highest current rating IGBT
Maximum power density, twice the power
handling of the TO-247, less space than TO-264
Benefits
V
CES
= 1200V
V
CE(on) typ.
= 2.97V
@V
GE
= 15V, I
C
= 42A
V
CES
Collector-to-Emitter Breakdown Voltage
1200
V
I
C
@ T
C
= 25C
Continuous Collector Current
78
I
C
@ T
C
= 100C
Continuous Collector Current
42
I
CM
Pulsed Collector Current
156
I
LM
Clamped Inductive Load Current
156
t
SC
Short Circuit Withstand Time
10
s
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
170
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
350
P
D
@ T
C
= 100C
Maximum Power Dissipation
140
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm from case )
C
Absolute Maximum Ratings
W
5/11/99
www.irf.com
1
SUPER - 247
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case
0.36
R
CS
Case-to-Sink, flat, greased surface
0.24
C/W
R
JA
Junction-to-Ambient, typical socket mount
38
Recommended Clip Force
20.0(2.0)
N (kgf)
Weight
6 (0.21)
g (oz)
Thermal Resistance\ Mechanical
Parameter
Max.
Units
A
IRG4PSH71K
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
18
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
1.1
V/C
V
GE
= 0V, I
C
= 10mA
2.97
3.9
I
C
= 42A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
3.44
I
C
= 78A
See Fig.2, 5
2.60
I
C
= 42A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
-12
mV/C V
CE
= V
GE
, I
C
= 1.5mA
g
fe
Forward Transconductance
25
38
S
V
CE
= 50V, I
C
= 42A
500
V
GE
= 0V, V
CE
= 1200V
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25C
5.0
mA
V
GE
= 0V, V
CE
= 1200V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
A
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Pulse width
80s; duty factor
0.1%
Pulse width 5.0s, single shot
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L =
10H, R
G
= 5.0
,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
410
610
I
C
= 42A
Q
ge
Gate - Emitter Charge (turn-on)
--
47
70
nC
V
CC
= 400V
See Fig.8
Q
gc
Gate - Collector Charge (turn-on)
--
145
220
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
45
--
t
r
Rise Time
--
38
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
220
340
I
C
= 42A, V
CC
= 960V
t
f
Fall Time
--
160
250
V
GE
= 15V, R
G
= 5.0
E
on
Turn-On Switching Loss
--
2.35
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
3.14
--
mJ
See Fig. 9,10,14
E
ts
Total Switching Loss
--
5.49
8.3
t
sc
Short Circuit Withstand Time
10
--
--
s
V
CC
= 720V, T
J
= 125C
V
GE
= 20V, R
G
= 5.0
t
d(on)
Turn-On Delay Time
--
42
--
T
J
= 150C
t
r
Rise Time
--
41
--
I
C
= 42A, V
CC
= 960V
t
d(off)
Turn-Off Delay Time
--
460
--
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
--
250
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
11.5
--
mJ
See Fig. 10,11,14
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
5770
--
V
GE
= 0V
C
oes
Output Capacitance
--
400
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
100
--
= 1.0MHz
ns
ns
Notes:
IRG4PSH71K
www.irf.com
3
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
1.0
2.0
3.0
4.0
5.0
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
V = 15V
80s PULSE WIDTH
GE
T = 150 C
J
T = 25 C
J
Ic , Collector-to-Emitter Current (A)
1
10
100
1000
5
6
7
8
9
10
11
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 150 C
J
T = 25 C
J
0
20
40
60
80
0.1
1
10
100
f, F req ue nc y (kH z )
Loa
d C
u
r
r
ent
(
A
)
A
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T = 125C
T = 90C
Gate drive as specified
sink
J
Triangular wave:
Clamp voltage:
80% of rated
Power Dissipation = 58W
IRG4PSH71K
4
www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0 . 0 1
0 . 1
1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1 0 0
1
t , R e ctang ular P ulse D uratio n (sec)
A
D = 0 .50
0 .20
0 .1 0
0.05
0.0 2
0.01
S IN G L E P U L S E
(T HE R M A L R E S P O N S E )
P
t2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
Thermal Response (Z
thJC
)
-60 -40 -20
0
20
40
60
80 100 120 140 160
2.0
3.0
4.0
5.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
84
C
I = A
42
C
I = A
21
C
25
50
75
100
125
150
0
20
40
60
80
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
IRG4PSH71K
www.irf.com
5
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
10
20
30
40
50
5
10
15
20
R , Gate Resistance
Total Switching Losses (mJ)
G
V = 960V
V = 15V
T = 25 C
I = 42A
CC
GE
J
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = 5.0
V = 15V
V = 960V
G
GE
CC
I = A
84
C
I = A
42
C
I = A
21
C
1
10
100
0
2000
4000
6000
8000
10000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
0
100
200
300
400
500
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 42A
CC
C
PDF 
ZIP