Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
1200
V
I
C
@ T
C
= 25C
Continuous Collector Current
78
I
C
@ T
C
= 100C
Continuous Collector Current
42
I
CM
Pulsed Collector Current
156
A
I
LM
Clamped Inductive Load Current
156
I
F
@ T
C
= 100C
Diode Continuous Forward Current
42
I
FM
Diode Maximum Forward Current
156
t
sc
Short Circuit Withstand Time
10
s
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
350
P
D
@ T
C
= 100C
Maximum Power Dissipation
140
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
IRG4PSH71KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
E
G
n-ch an nel
C
V
CES
= 1200V
V
CE(on) typ.
= 2.97V
@V
GE
= 15V, I
C
= 42A
Short Circuit Rated
UltraFast IGBT
5/11/99
PRELIMINARY
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
0.36
R
JC
Junction-to-Case - Diode
0.69
C/W
R
CS
Case-to-Sink, flat, greased surface
0.24
R
JA
Junction-to-Ambient, typical socket mount
38
Recommended Clip Force
20.0(2.0)
N (kgf)
Weight
6 (0.21)
g (oz)
Absolute Maximum Ratings
W
Thermal Resistance\ Mechanical
PD - 91688A
Features
Benefits
www.irf.com
1
Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
High short circuit rating IGBTs, optimized for
motorcontrol
Minimum switching losses combined with low
conduction losses
Tightest parameter distribution
IGBT co-packaged with ultrafast soft recovery
antiparallel diode
Creepage distance increased to 5.35mm
Highest current rating copack IGBT
Maximum power density, twice the power
handling of the TO-247, less space than TO-264
HEXFRED
TM
diode optimized for operation with
IGBT, to minimize EMI, noise and switching losses
SUPER - 247
IRG4PSH71KD
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
410
610
I
C
= 42A
Q
ge
Gate - Emitter Charge (turn-on)
--
47
70
nC
V
CC
= 400V
See Fig.8
Q
gc
Gate - Collector Charge (turn-on)
--
145
220
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
67
--
t
r
Rise Time
--
84
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
230
350
I
C
= 42A, V
CC
= 800V
t
f
Fall Time
--
130
190
V
GE
= 15V, R
G
= 5.0
E
on
Turn-On Switching Loss
--
5.68
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
3.23
--
mJ
and diode reverse recovery
E
ts
Total Switching Loss
--
8.90 11.6
See Fig. 9,10,18
t
sc
Short Circuit Withstand Time
10
--
--
s
V
CC
= 720V, T
J
= 125C
V
GE
= 15V, R
G
= 5.0
t
d(on)
Turn-On Delay Time
--
65
--
T
J
= 150C,
See Fig. 11,18
t
r
Rise Time
--
87
--
I
C
= 42A, V
CC
= 800V
t
d(off)
Turn-Off Delay Time
--
370
--
V
GE
= 15V, R
G
= 5.0
t
f
Fall Time
--
290
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
13.7
--
mJ
and diode reverse recovery
L
E
Internal Emitter Inductance
--
13
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
5770
--
V
GE
= 0V
C
oes
Output Capacitance
--
400
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
100
--
= 1.0MHz
t
rr
Diode Reverse Recovery Time
--
107
160
ns
T
J
= 25C See Fig.
--
160
240
T
J
= 125C 14 I
F
= 42A
I
rr
Diode Peak Reverse Recovery Current
--
10
15
A
T
J
= 25C See Fig.
--
16
24
T
J
= 125C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
--
680 1020
nC
T
J
= 25C See Fig.
--
1400 2100
T
J
= 125C 16 di/dt = 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
250
--
A/s
T
J
= 25C See Fig.
During t
b
--
320
--
T
J
= 125C 17
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
1.1
--
V/C
V
GE
= 0V, I
C
= 10mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.97
3.9
I
C
= 42A
V
GE
= 15V
--
3.44
--
V
I
C
= 78A
See Fig. 2, 5
--
2.60
--
I
C
= 42A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-12
--
mV/C V
CE
= V
GE
, I
C
= 1.5mA
g
fe
Forward Transconductance
25
38
--
S
V
CE
= 50V, I
C
= 42A
I
CES
Zero Gate Voltage Collector Current
--
--
500
A
V
GE
= 0V, V
CE
= 1200V
--
--
10
mA
V
GE
= 0V, V
CE
= 1200V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
--
2.5
3.7
I
C
= 42A
See Fig. 13
--
2.4
--
I
C
= 42A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
V
IRG4PSH71KD
www.irf.com
3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
1.0
2.0
3.0
4.0
5.0
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
V = 15V
80s PULSE WIDTH
GE
T = 150 C
J
T = 25 C
J
1
10
100
1000
5
6
7
8
9
10
11
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 150 C
J
T = 25 C
J
Ic , Collector-to-Emitter Current (A)
0.1
1
10
100
0
10
20
30
40
f, Frequency (KHz)
LOAD CURRENT (A)
6 0% of rate d
volta ge
I
Id e a l d io d e s
S q u a re w a v e :
F o r b o th :
D u ty c y c le : 5 0 %
T = 1 2 5 C
T = 9 0 C
G a te d riv e a s s p e c ifie d
sink
J
P o w e r D is s ip a tio n = W
58
IRG4PSH71KD
4
www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0 . 0 1
0 . 1
1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1 0 0
1
t , R e ctang ular P ulse D uratio n (sec)
A
D = 0 .50
0 .20
0 .1 0
0.05
0.0 2
0.01
S IN G L E P U L S E
(T HE R M A L R E S P O N S E )
P
t2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
Thermal Response (Z
thJC
)
-60 -40 -20
0
20
40
60
80 100 120 140 160
2.0
3.0
4.0
5.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
84
C
I = A
42
C
I = A
21
C
25
50
75
100
125
150
0
20
40
60
80
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
IRG4PSH71KD
www.irf.com
5
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
( )
1
10
100
0
2000
4000
6000
8000
10000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
0
100
200
300
400
500
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 42A
CC
C
0
10
20
30
40
50
9
10
11
12
13
14
15
R , Gate Resistance
Total Switching Losses (mJ)
G
V = 800V
V = 15V
T = 25 C
I = 42A
CC
GE
J
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = 5.0
V = 15V
V = 800V
G
GE
CC
I = A
84
C
I = A
42
C
I = A
21
C
()
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