IRG4RC10K
12/30/00
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UltraFast IGBT
D-PAK
TO-252AA
Features
Benefits
Thermal Resistance
C/W
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.3
R
JA
Junction-to-Ambient (PCB mount)*
50
Wt
Weight
0.3 (0.01)
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
E
C
G
n-channel
Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10s @ 125C, V
GE
= 15V
Generation 4 IGBT design provides higher efficiency
than Generation 3
Industry standard TO-252AA package
V
CES
= 600V
V
CE(on) typ.
= 2.39V
@V
GE
= 15V, I
C
= 5.0A
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
9.0
I
C
@ T
C
= 100C
Continuous Collector Current
5.0
A
I
CM
Pulsed Collector Current
Q
18
I
LM
Clamped Inductive Load Current
R
18
t
sc
Short Circuit Withstand Time
10
s
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
S
34
mJ
P
D
@ T
C
= 25C
Maximum Power Dissipation
38
P
D
@ T
C
= 100C
Maximum Power Dissipation
15
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
C
Absolute Maximum Ratings
W
PD 91735A
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Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
19
29
I
C
= 5.0A
Q
ge
Gate - Emitter Charge (turn-on)
--
2.9
4.3
nC
V
CC
= 400V
See Fig.8
Q
gc
Gate - Collector Charge (turn-on)
--
9.8
15
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
11
--
t
r
Rise Time
--
24
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
51
77
I
C
= 5.0A, V
CC
= 480V
t
f
Fall Time
--
190
290
V
GE
= 15V, R
G
= 100
E
on
Turn-On Switching Loss
--
0.16
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
0.10
--
mJ
See Fig. 9,10,14
E
ts
Total Switching Loss
--
0.26 0.32
t
sc
Short Circuit Withstand Time
10
--
--
s
V
CC
= 400V, T
J
= 125C
V
GE
= 15V, R
G
= 100
, V
CPK
< 500V
t
d(on)
Turn-On Delay Time
--
11
--
T
J
= 150C,
t
r
Rise Time
--
27
--
I
C
= 5.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
67
--
V
GE
= 15V, R
G
= 100
t
f
Fall Time
--
350
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
0.47
--
mJ
See Fig. 10,11,14
L
E
Internal Emitter Inductance
--
7.5
--
nH
Measured 5mm from package
C
ies
Input Capacitance
--
220
--
V
GE
= 0V
C
oes
Output Capacitance
--
29
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
7.5
--
= 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
--
--
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.58
--
V/C
V
GE
= 0V, I
C
= 1.0mA
--
2.39
2.62
I
C
= 5.0A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
--
3.25
--
I
C
= 9.0A
See Fig.2, 5
--
2.63
--
I
C
= 5.0A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.5
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-11
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
U
1.2
1.8
--
S
V
CE
= 50 V, I
C
= 5.0A
--
--
250
V
GE
= 0V, V
CE
= 600V
--
--
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25C
--
--
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
A
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
S
Repetitive rating; pulse width limited by maximum
junction temperature.
T
Pulse width
80s; duty factor
0.1%.
U
Pulse width 5.0s, single shot.
Notes:
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10H, R
G
= 100
,
(See fig. 13a)
IRG4RC10K
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
5s PULSE WIDTH
1
10
100
1.0
2.0
3.0
4.0
5.0
6.0
7.0
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
T = 150 C
J
1
10
100
5
10
15
20
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
T = 150 C
J
0
1
2
3
4
0 . 1
1
1 0
1 0 0
f, F re q u e n c y (k H z)
Loa
d C
u
r
r
e
nt
(
A
)
A
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Triangular wave:
Clamp voltage:
80% of rated
Power Dissipation = 1.4W
Duty cycle: 50%
T = 125C
T = 55C
Gate drive as specified
sink
J
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4
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
4.0
5.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
10
C
I = A
5
C
I = A
2.5
C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0
2
4
6
8
10
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
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5
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
10
C
I = A
5
C
I = A
2.5
C
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
100
1
10
100
0
100
200
300
400
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
0
4
8
12
16
20
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 5.0A
CC
C
0
20
40
60
80
100
0.20
0.22
0.24
0.26
0.28
R , Gate Resistance
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 5A
CC
GE
J
C
(
)
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