IRGPS40B120UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
V
CES
= 1200V
V
CE(on)
typ. = 3.12V
@ V
GE
= 15V,
I
CE
= 40A, Tj=25C
8/18/04
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
1200
V
I
C
@ T
C
= 25C
Continuous Collector Current
80
I
C
@ T
C
= 100C
Continuous Collector Current
40
I
CM
Pulsed Collector Current
160
A
I
LM
Clamped Inductive Load Current
160
I
F
@ T
C
= 25C
Diode Continuous Forward Current
80
I
F
@ T
C
= 100C
Diode Continuous Forward Current
40
I
FM
Diode Maximum Forward Current
160
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@ T
C
= 25C
Maximum Power Dissipation
595
P
D
@ T
C
= 100C
Maximum Power Dissipation
238
T
J
Operating Junction and
-55 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Non Punch Through IGBT Technology.
Low Diode VF.
10s Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package.
Benefits
W
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1
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Significantly Less Snubber Required
Excellent Current Sharing in Parallel Operation.
E
G
C
N-channel
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case - IGBT
0.20
R
JC
Junction-to-Case - Diode
0.83
C/W
R
CS
Case-to-Sink, flat, greased surface
0.24
R
JA
Junction-to-Ambient, typical socket mount
40
Recommended Clip Force
20 (2)
N(kgf)
Wt
Weight
6.0 (0.21)
g (oz)
Le
Internal Emitter Inductance (5mm from package)
13
nH
Thermal Resistance
Super-247TM
UltraFast Co-Pack IGBT
PD- 94240A
IRGPS40B120UD
2
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Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Ref.Fig.
5, 6
7, 9
10
11
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
V
V
GE
= 0V, I
C
= 500A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
0.40
V/C
V
GE
= 0V, I
C
= 1.0mA, (25C-125C)
V
CE(on)
Collector-to-Emitter Saturation Voltage
3.12 3.40
I
C
= 40A
V
GE
= 15V
3.39 3.70
V
I
C
= 50A
3.88 4.30
I
C
= 40A, T
J
= 125C
4.24 4.70
I
C
= 50A, T
J
= 125C
V
GE(th)
Gate Threshold Voltage
4.0
5.0
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
-12
mV/C V
CE
= V
GE
, I
C
= 1.0mA, (25C-125C)
g
fe
Forward Transconductance
30.5
S
V
CE
= 50V, I
C
= 40A, PW=80s
I
CES
Zero Gate Voltage Collector Current
500
A
V
GE
= 0V, V
CE
= 1200V
420 1200
V
GE
= 0V, V
CE
= 1200V, T
J
= 125C
V
FM
Diode Forward Voltage Drop
2.03 2.40
I
C
= 40A
2.17 2.60
V
I
C
= 50A
2.26 2.68
I
C
= 40A, T
J
= 125C
2.46 2.95
I
C
= 50A, T
J
= 125C
I
GES
Gate-to-Emitter Leakage Current
100
nA
V
GE
= 20V
9,10
11 ,12
8
Ref.Fig.
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
340
510
I
C
= 40A
Qge
Gate - Emitter Charge (turn-on)
40
60
nC
V
CC
= 600V
Q
gc
Gate - Collector Charge (turn-on)
165
248
V
GE
= 15V
E
on
Turn-On Switching Loss
1400 1750
J
I
C
= 40A, V
CC
= 600V
E
off
Turn-Off Switching Loss
1650 2050
V
GE
= 15V,R
G
= 4.7
,
L =200H
E
tot
Total Switching Loss
3050 3800
Ls = 150nH
T
J
= 25C
E
on
Turn-On Switching Loss
1950 2300
T
J
= 125C
E
off
Turn-Off Switching Loss
2200 2950
J
Energy losses include "tail" and
E
tot
Total Switching Loss
4150 5250
diode reverse recovery.
t
d(on)
Turn-On Delay Time
76
99
I
C
= 40A, V
CC
= 600V
t
r
Rise Time
39
55
V
GE
= 15V, R
G
= 4.7
L =200H
t
d(off)
Turn-Off Delay Time
332
365
ns
Ls = 150nH, T
J
= 125C
t
f
Fall Time
25
33
C
ies
Input Capacitance
4300
V
GE
= 0V
C
oes
Output Capacitance
330
pF
V
CC
= 30V
C
res
Reverse Transfer Capacitance
160
f = 1.0MHz
T
J
= 150C, I
C
= 160A, Vp =1200V
V
CC
= 1000V, V
GE
= +15V to 0V
R
G
= 4.7
T
J
= 150C, Vp =1200V
V
CC
= 900V, V
GE
= +15V to 0V,
R
G
= 4.7
Erec
Reverse Recovery energy of the diode
3346
J
T
J
= 125C
t
rr
Diode Reverse Recovery time
180
ns
V
CC
= 600V, I
F
= 60A, L =200H
I
rr
Diode Peak Reverse Recovery Current
50
A
V
GE
= 15V,R
G
= 4.7
,
Ls = 150nH
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
23
CT1
CT4
WF1
WF2
13,15
14, 16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
SCSOA
Short Circuit Safe Operting Area
10
s
IRGPS40B120UD
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3
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
T
C
= 25C; T
JS
150C
Fig. 4 - Reverse Bias SOA
T
J
= 150C; V
GE
=15V
0
20
40
60
80
100 120 140 160
TC (C)
0
20
40
60
80
100
I C
(
A
)
0
50
100
150
200
TC (C)
0
100
200
300
400
500
600
700
P
t
o
t
(
W
)
1
10
100
1000
10000
VCE (V)
0.1
1
10
100
1000
I C
(
A
)
2 s
10 s
100 s
1ms
10ms
DC
10
100
1000
10000
VCE (V)
1
10
100
1000
I C
A
)
IRGPS40B120UD
4
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Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 25C; tp = 80s
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= -40C; tp = 80s
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80s
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 125C; tp = 80s
0
1
2
3
4
5
6
VCE (V)
0
20
40
60
80
I C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
1
2
3
4
5
6
VCE (V)
0
10
20
30
40
50
60
70
80
I C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
1
2
3
4
5
6
VCE (V)
0
10
20
30
40
50
60
70
80
I C
E
(
A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
1
2
3
4
VF (V)
0
10
20
30
40
50
60
70
80
I F
(
A
)
-40C
25C
125C
IRGPS40B120UD
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5
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25C
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40C
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 125C
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 10s
5
10
15
20
VGE (V)
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
ICE = 20A
ICE = 40A
ICE = 80A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
ICE = 20A
ICE = 40A
ICE = 80A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
ICE = 20A
ICE = 40A
ICE = 80A
0
5
10
15
20
VGE (V)
0
50
100
150
200
250
300
350
400
450
500
I C
E
(
A
)
TJ = 25C
TJ = 125C
TJ = 125C
TJ = 25C
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