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IRL1404
HEXFET
Power MOSFET
Seventh Generation HEXFET
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The
low thermal resistance and low package cost of the TO-220 contribute to
its wide acceptance throughout the industry.
S
D
G
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
160
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
110
A
I
DM
Pulsed Drain Current
640
P
D
@T
C
= 25C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
620
mJ
I
AR
Avalanche Current
95
A
E
AR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
C
Mounting torque, 6-32 or M3 srew
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 4.0m
I
D
= 160A
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
06/14/04
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1
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
(PCB Mounted)
62
TO-220AB
PD - 93854B
IRL1404
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.038
V/C
Reference to 25C, I
D
= 1mA
4.0
V
GS
= 10V, I
D
= 95A
5.9
V
GS
= 4.3V, I
D
= 40A
V
GS(th)
Gate Threshold Voltage
1.0
3.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
93
S
V
DS
= 25V, I
D
= 95A
20
A
V
DS
= 40V, V
GS
= 0V
250
V
DS
= 32V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -20V
Q
g
Total Gate Charge
140
I
D
= 95A
Q
gs
Gate-to-Source Charge
48
nC
V
DS
= 32V
Q
gd
Gate-to-Drain ("Miller") Charge
60
V
GS
= 5.0V, See Fig. 6
t
d(on)
Turn-On Delay Time
18
V
DD
= 20V
t
r
Rise Time
270
I
D
= 95A
t
d(off)
Turn-Off Delay Time
38
R
G
= 2.5
V
GS
= 4.5V
t
f
Fall Time
37
R
D
= 0.25
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
6590
V
GS
= 0V
C
oss
Output Capacitance
1710
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
350
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
6650
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
1510
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
1480
V
GS
= 0V, V
DS
= 0V to 32V
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 95A, V
GS
= 0V
t
rr
Reverse Recovery Time
63
94
ns
T
J
= 25C, I
F
= 95A
Q
rr
Reverse RecoveryCharge
170
250
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
160
640
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11).
Starting T
J
= 25C, L = 0.35mH
R
G
= 25
, I
AS
= 95A. (See Figure 12).
I
SD
95A, di/dt
160A/s, V
DD
V
(BR)DSS
,
T
J
175C.
Pulse width
300s; duty cycle
2%.
Notes:
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
m
R
DS(on)
Static Drain-to-Source On-Resistance
IRL1404
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source O
n
Resistance
(Normalized)
J
D
S
(
on)
V
=
I =
GS
D
10V
160A
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.3V
V , Drain-to-Source Voltage (V)
I , D
r
ain-to-S
ource C
u
rrent (A
)
DS
D
4.3V
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.3V
V , Drain-to-Source Voltage (V)
I , D
r
ain-to-S
ource C
u
rrent (A
)
DS
D
4.3V
100
1000
4.0
5.0
6.0
7.0
8.0
V = 15V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 175 C
J
IRL1404
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0
100
200
300
400
500
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
95A
V
= 20V
DS
V
= 32V
DS
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
10
100
1000
10000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRL1404
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
25
50
75
100
125
150
175
0
40
80
120
160
T , Case Temperature ( C)
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
C
D
LIMITED BY PACKAGE
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal
Response
(Z )
1
th
J
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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