IRL1404S
IRL1404L
HEXFET
Power MOSFET
Seventh Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for low-
profile applications.
S
D
G
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
160
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
110
A
I
DM
Pulsed Drain Current
640
P
D
@T
A
= 25C
Power Dissipation
3.8
W
P
D
@T
C
= 25C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/C
V
GS
Gate-to-Source Voltage
20
V
E
AS
Single Pulse Avalanche Energy
520
mJ
I
AR
Avalanche Current
95
A
E
AR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
C
Absolute Maximum Ratings
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.004
I
D
= 160A
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
02/22/02
PD - 93854A
www.irf.com
1
D
2
Pak
IRL1404S
TO-262
IRL1404L
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
(PCB Mounted)
40
IRL1404S/IRL1404L
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.038
V/C
Reference to 25C,
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.004
V
GS
= 10V, I
D
= 95A
0.0059
V
GS
= 4.3V, I
D
= 40A
V
GS(th)
Gate Threshold Voltage
1.0
3.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
93
S
V
DS
= 25V, I
D
= 95A
20
A
V
DS
= 40V, V
GS
= 0V
250
V
DS
= 32V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -20V
Q
g
Total Gate Charge
140
I
D
= 95A
Q
gs
Gate-to-Source Charge
48
nC
V
DS
= 32V
Q
gd
Gate-to-Drain ("Miller") Charge
60
V
GS
= 5.0V, See Fig. 6
t
d(on)
Turn-On Delay Time
18
V
DD
= 20V
t
r
Rise Time
270
I
D
= 95A
t
d(off)
Turn-Off Delay Time
38
R
G
= 2.5
V
GS
= 4.5V
t
f
Fall Time
130
R
D
= 0.25
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
6600
V
GS
= 0V
C
oss
Output Capacitance
1700
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
350
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
6700
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
1500
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
1500
V
GS
= 0V, V
DS
= 0V to 32V
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 95A, V
GS
= 0V
t
rr
Reverse Recovery Time
63
94
ns
T
J
= 25C, I
F
= 95A
Q
rr
Reverse RecoveryCharge
170
250
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
160
640
A
IRL1404S/IRL1404L
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20 40
60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
160A
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.3V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.3V
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.3V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.3V
100
1000
4.0
5.0
6.0
7.0
8.0
V = 15V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 175 C
J
IRL1404S/IRL1404L
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
100
200
300
400
500
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
95A
V
= 20V
DS
V
= 32V
DS
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
10
100
1000
10000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRL1404S/IRL1404L
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
25
50
75
100
125
150
175
0
40
80
120
160
T , Case Temperature
( C)
I , Drain Current (A)
C
D
LIMITED BY PACKAGE
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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