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IRL2910S/L
HEXFET
Power MOSFET
PD - 91376C
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.026
I
D
= 55A
l
Logic-Level Gate Drive
l
Surface Mount
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
Fast Switching
l
Fully Avalanche Rated
10/09/03
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.75
R
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**
40
Thermal Resistance
C/W
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
55
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
39
A
I
DM
Pulsed Drain Current
190
P
D
@T
A
= 25C
Power Dissipation
3.8
W
P
D
@T
C
= 25C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/C
V
GS
Gate-to-Source Voltage
16
V
E
AS
Single Pulse Avalanche Energy
520
mJ
I
AR
Avalanche Current
29
A
E
AR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for low-
profile applications.
Description
2
D Pak
TO-262
IRL2910S/L
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
0.12
V/C Reference to 25C, I
D
= 1mA
0.026
V
GS
= 10V, I
D
= 29A
0.030
V
GS
= 5.0V, I
D
= 29A
0.040
V
GS
= 4.0V, I
D
= 24A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
28
S
V
DS
= 50V, I
D
= 29A
25
V
DS
= 100V, V
GS
= 0V
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage
-100
V
GS
= -16V
Q
g
Total Gate Charge
140
I
D
= 29A
Q
gs
Gate-to-Source Charge
20
nC
V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge
81
V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
11
V
DD
= 50V
t
r
Rise Time
100
I
D
= 29A
t
d(off)
Turn-Off Delay Time
49
R
G
= 1.4, V
GS
= 5.0V
t
f
Fall Time
55
R
D
= 1.7, See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance
3700
V
GS
= 0V
C
oss
Output Capacitance
630
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
330
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance
7.5
ns
nH
A
Source-Drain Ratings and Characteristics
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Pulse width 300s; duty cycle 2%.
V
DD
= 25V, starting T
J
= 25C, L = 1.2mH
R
G
= 25, I
AS
= 29A. (See Figure 12)
I
SD
29A, di/dt 490A/s, V
DD
V
(BR)DSS
,
T
J
175C
Uses IRL2910 data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 29A, V
GS
= 0V
t
rr
Reverse Recovery Time
240 350
ns
T
J
= 25C, I
F
= 29A
Q
rr
Reverse RecoveryCharge
1.8
2.7
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
S
D
G
55
190
A
IRL2910S/L
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
10
100
1000
0.1
1
10
100
I , D
r
a
i
n
-
to
-S
o
u
rc
e
C
u
rre
n
t
(A
)
D
V , Drain-to-Source Voltage (V)
DS
A
20s PULSE WIDTH
T = 25C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
1
10
100
1000
0.1
1
10
100
I , D
r
a
i
n
-
to
-S
o
u
rc
e
C
u
rre
n
t
(A
)
D
V , Drain-to-Source Voltage (V)
DS
A
20s PULSE WIDTH
T = 175C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
1
10
100
1000
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
T = 25C
J
GS
V , Gate-to-Source Voltage (V)
D
I
,
Dra
i
n
-
to
-So
u
rc
e
Cu
rr
e
n
t
(
A
)
T = 175C
J
A
V = 50V
20s PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
J
T , Junction Temperature (C)
R
, D
r
a
i
n
-
to
-
S
o
u
rc
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
on)
(N
o
r
m
a
l
i
ze
d)
V = 10V
GS
A
I = 48A
D
IRL2910S/L
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
6000
1
10
100
C
,
Ca
pa
c
i
t
a
n
c
e (
p
F)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
3
6
9
12
15
0
40
80
120
160
200
Q , Total Gate Charge (nC)
G
V
, G
a
te
-to
-
S
o
u
r
c
e
V
o
lta
g
e
(V
)
GS
V = 80V
V = 50V
V = 20V
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 29A
DS
DS
DS
D
10
100
1000
0.4
0.8
1.2
1.6
2.0
T = 25C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , R
e
v
e
rs
e
D
r
a
i
n
C
u
rre
n
t
(A
)
SD
SD
A
T = 175C
J
1
10
100
1000
1
10
100
1000
V , Drain-to-Source Voltage (V)
DS
I , D
r
a
i
n
C
u
rre
n
t
(A
)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10s
100s
1ms
10ms
A
T = 25C
T = 175C
Single Pulse
C
J
IRL2910S/L
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
5.0V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
10
20
30
40
50
25
50
75
100
125
150
175
C
I , D
r
a
i
n
C
u
rre
n
t
(
A
m
p
s
)
D
T , Case Temperature (C)
A
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
thJ
C
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
Ther
m
a
l
R
e
s
ponse (
Z
)
P
t2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
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