Symbol
Parameter
Max.
Units
V
DS
Drain-Source Voltage
20
V
V
GS
Gate-to-Source Voltage
20 V
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
36
I
D
@ T
C
= 70C
Continuous Drain Current, V
GS
@ 10V
31
A
I
DM
Pulsed Drain Current
140
P
D
@T
C
= 25C
Maximum Power Dissipation
47
W
P
D
@T
C
= 70C
Maximum Power Dissipation
33
W
Linear Derating Factor
0.31
W/C
T
J
, T
STG
Junction and Storage Temperature Range
-55 to + 175
C
www.irf.com
1
06/19/01
IRL3714
IRL3714S
IRL3714L
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
R
DS(on)
max
I
D
20V
20m
36A
Notes
through
are on page 11
Absolute Maximum Ratings
D
2
Pak
IRL3714S
TO-220AB
IRL3714
TO-262
IRL3714L
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.2
R
CS
Case-to-Sink, Flat, Greased Surface
0.50
C/W
R
JA
Junction-to-Ambient
62
R
JA
Junction-to-Ambient (PCB mount)
40
Applications
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
PD - 94175A
IRL3714/3714S/3714L
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
1.3
V
T
J
= 25C, I
S
= 18A, V
GS
= 0V
0.88
T
J
= 125C, I
S
= 18A, V
GS
= 0V
t
rr
Reverse Recovery Time
35
53
ns
T
J
= 25C, I
F
= 18A, V
R
=10V
Q
r r
Reverse Recovery Charge
34
51
nC
di/dt = 100A/s
t
rr
Reverse Recovery Time
35
53
ns
T
J
= 125C, I
F
= 18A, V
R
=10V
Q
r r
Reverse Recovery Charge
35
53
nC
di/dt = 100A/s
Parameter
Min.
Typ.
Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.022 V/C Reference to 25C, I
D
= 1mA
15
20
V
GS
= 10V, I
D
= 18A
21
28
V
GS
= 4.5V, I
D
= 14A
V
GS(th)
Gate Threshold Voltage
1.0
3.0
V
V
DS
= V
GS
, I
D
= 250A
20
A
V
DS
= 16V, V
GS
= 0V
100
V
DS
= 16V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
200
V
GS
= 16V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -16V
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
72
mJ
I
AR
Avalanche Current
14
A
Avalanche Characteristics
S
D
G
Diode Characteristics
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
17
S
V
DS
= 10V, I
D
= 14A
Q
g
Total Gate Charge
6.5
9.7 I
D
= 14A
Q
gs
Gate-to-Source Charge
1.8
nC
V
DS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge
2.9
V
GS
= 4.5V
Q
oss
Output Gate Charge
7.1
V
GS
= 0V, V
DS
= 10V
t
d(on)
Turn-On Delay Time
8.7
V
DD
= 10V
t
r
Rise Time
78
I
D
= 14A
t
d(off)
Turn-Off Delay Time
10
R
G
= 1.8
t
f
Fall Time
4.5
V
GS
= 4.5V
C
iss
Input Capacitance
670
V
GS
= 0V
C
oss
Output Capacitance
470
V
DS
= 10V
C
rss
Reverse Transfer Capacitance
68
pF
= 1.0MHz
V
SD
Diode Forward Voltage
Static @ T
J
= 25C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
36
140
m
IRL3714/3714S/3714L
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
I D
, Drain-to-Source Current (A)
2.0V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
, Drain-to-Source Current (A)
2.0V
20s PULSE WIDTH
Tj = 175C
VGS
TOP 15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature
( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I
=
GS
D
10V
36A
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
1.00
10.00
100.00
1000.00
I D
, Drain-to-Source Current
(
)
TJ = 25C
TJ = 175C
VDS = 15V
20s PULSE WIDTH
IRL3714/3714S/3714L
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0.0
1.0
2.0
3.0
VSD, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I SD
, Reverse Drain Current (A)
TJ = 25C
TJ = 175C
VGS = 0V
1
10
100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
, Drain-to-Source Current (A)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
0
4
8
12
16
20
0
3
6
9
12
15
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I
=
D
14
V
= 10V
DS
V
= 16V
DS
IRL3714/3714S/3714L
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5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
4.5V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
10
20
30
40
T , Case Temperature
( C)
I , Drain Current (A)
C
D
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